Incorporation of group III, IV and V elements in 3C-SiC(1 1 1) layers grown by the vapour-liquid-solid mechanism
Silicon carbide National Category Inorganic Chemistry Identifiers. URN: urn:nbn:se:liu:diva-128848DOI: 10.1016/j.jcrysgro. ...
SiC epitaxy growth using chloride-based CVD
Silicon carbide, Chloride, Epitaxy, Doping, PL, DLTS National Category Engineering and Technology Identifiers. URN: urn:nbn:se: ... a molecule that contains silicon, carbon and chlorine. Optical and electrical techniques are used to characterize the layers. ...
Structural investigation and lateral growth of silicon carbide crystals
... Jacobson, Henrik Linköping University, Department of ... The demands from the industry of improved performance within smaller devices drives the silicon based devices to the limits ... To realize these demands new materials like silicon carbide (SiC) must be investigated. SiC is a wide bandgap semiconductor ...
Spin transport in epitaxial graphene on the C-terminated (000(1)over-bar)-face of silicon carbide
... van den Berg, J. J. ... face of silicon carbide (SiC), a system without a carbon buffer layer between the graphene and the SiC. Using spin Hanle ...
Multiple-layered effective medium approximation approach to modeling environmental effects on alumina passivated highly porous...
Porous silicon; Ellipsometry; Mueller matrix; Adsorption; In-situa National Category Other Materials Engineering Identifiers. ... Optical changes in alumina passivated highly porous silicon slanted columnar thin films during controlled exposure to toluene ... allows for accurate description of the inhomogeneous nature of toluene adsorption onto alumina passivated highly porous silicon ... deposition and subsequent atomic layer deposition are utilized to deposit alumina passivated nanostructured porous silicon thin ...
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... a new power-efficient platform for sensing and amplifying low-amplitude voltage signals in several emerging beyond-silicon ...
Tin-vacancy acceptor levels in electron-irradiated n-type silicon
... Nylandsted Larsen, A. Institute of Physics and Astronomy, ...
Temporal isotopic variations of dissolved silicon in a pristine boreal river
... Engström, Emma Luleå University of Technology, ...
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The device is based on free-standing silicon nitride membranes of 150 nm thickness onto which thin film heaters and temperature ... The investigated device is based on freestanding, 150 nm thick silicon nitride membranes onto which thin film heaters and ... each of which is a stack of heaters and thermometer in the center of a silicon nitride membrane, in total giving a background ...
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Interviews with Tesla, located in the Silicon Valley, California, USA, have been conducted. We also met two key employees in ...
Prototyping of a high pressure die cast al-si alloy using plaster mold casting to replicate corresponding mechanical properties
Silicon alloys National Category Materials Engineering Identifiers. URN: urn:nbn:se:hj:diva-43728DOI: 10.1007/978-3-030-05864-7 ...
Additive manufacturing of a metallic optical bench-process development, material qualification and demonstration
As a central component of the telescope, hundreds of silicon pore optic (SPO) modules will be assembled in an optical bench ...
Nanowire-based Infrared Photodetectors
The presented nanowire-based photodetectors can potentially be grown on silicon substrates due to the small footprint of the ...
DC field dependent properties of Na0.5 K0.5 NbO3/SiO2/Si structures at millimeter-wave frequencies
Dielectric properties of laser-ablated 0.5-μm-thick c-axis epitaxial Na0.5K0.5NbO3 films on high-resistivity (7.7 Ω cm) silicon ...
Friction and Wear of Ceramics : Principles and Case Studies
State of the art research findings on important ceramic composites are included and an understanding on the behavior of silicon ...
Multipoint spectroscopic analyzing & imaging method
... a silicon pin photodiode detector, lens, multimeter, X-Y positioner stepper motors to scan samples. The work show successfully ...
Spectral Interferometry with Frequency Combs
... silicon photonics, spectral interfer-ometry, swept-wavelength interferometry, Coherent light, Frequency domain analysis, ...
Highly efficient UV detection in a metal-semiconductor-metal detector with epigraphene
We show that epitaxial graphene on silicon carbide (epigraphene) grown at high temperatures (T ,1850 °C) readily acts as ... Efficiency, Metals, Quantum efficiency, Silicon detectors, Epitaxial graphene, External quantum efficiency, Highest temperature ... Silicon carbide National Category Other Electrical Engineering, Electronic Engineering, Information Engineering Identifiers. ...
Reduction of CO2 emissions from integrated steelmaking by optimised scrap strategies : Application of process integration...
This include combinations of scrap addition to the blast furnace, increased silicon content in tapped hot metal, and/or ... The influence of hot metal silicon content is elucidated by calculations with different material and process constraints. The ... addition of Ferro-silicon combined with further scrap additions to the oxygen converter. Different strategies for CO2 emission ...