Highly extended polyacenes such as pentacene and naphthacene have been essential organic semiconductors for high-performance organic field-effect transistors (OFETs). Among the range of thienoacene-based organic semiconductors, materials with an internal thieno[3,2-b]thiophene substructure, such as DNTT and BTBT, have shown the best p-channel organic semiconductors for OFET applications in terms of high mobility, air stability, and good reproducibility.

Highly extended polyacenes such as pentacene and naphthacene have been essential organic semiconductors for high-performance organic field-effect transistors (OFETs). Among the range of thienoacene-based organic semiconductors, materials with an internal thieno[3,2-b]thiophene substructure, such as DNTT and BTBT, have shown the best p-channel organic semiconductors for OFET applications in terms of high mobility, air stability, and good reproducibility.

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One-dimensional materials exhibit striking, unique phenomena that are not found in two or three dimensions. For the last twenty years, single walled carbon nanotubes (CNTs) have served as the prototypical experimental one-dimensional system. In this thesis, I investigate experimental data and theoretical models of spatially and electrically isolated single-walled CNTs field-effect transistors.; Carbon nanotubes are grown using chemical vapor deposition, which relies on small percentage of as-grown CNTs landing across pre-defined Pt electrodes that define the transistor. A Landauer model is developed, which explains the gate and bias voltage dependence of the electrical transport in these devices, and which serves as the basis for much of the analysis of the experimental electrical transport and Raman data.; Raman spectra are collected from CNTs under high applied bias voltages. When heated with an electrical current, the Raman spectra of CNTs downshift, and this shift can be used as an in-situ ...

TY - JOUR. T1 - Performance enhancement of organic thin-film transistors with improved copper phthalocyanine crystallization by inserting ultrathin pentacene buffer. AU - Huang, Wei. AU - Yu, Junsheng. AU - Yu, Xinge. AU - Li, Yu. AU - Zeng, Hongjuan. N1 - Funding Information: This work was supported by the National Science Foundation of China (NSFC) (Grant Nos. 61177032 and 61071026 ), the Foundation for Innovative Research Groups of the NSFC (Grant No. 61021061 ), the Fundamental Research Funds for the Central Universities (Grant No. ZYGX2010Z004 ), SRF for ROCS, SEM (Grant No. GGRYJJ08-05 ), and the Doctoral Fund of Education Ministry of China (Grant No. 20090185110020 ).. PY - 2012/8/31. Y1 - 2012/8/31. N2 - Organic thin-film transistors (OTFTs) with high crystallization copper phthalocyanine (CuPc) active layers were fabricated by inserting an ultrathin pentacene buffer layer between the dielectric and CuPc layers. Comparing with the OTFTs without a pentacene buffer layer, the charge ...

As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry and academia. To understand device physics in depth and to assess the performance limits of SNWTs, simulation is becoming increasingly important. The objectives of this thesis are: 1) to theoretically explore the essential physics of SNWTs (e.g., electrostatics, transport and bandstructure) by performing computer-based simulations, and 2) to assess the performance limits and scaling potentials of SNWTs and to address the SNWT design issues. A full three- dimensional, self-consistent, ballistic SNWT simulator has been developed based on the effective-mass approximation with which we have evaluated the upper performance limits of SNWTs with various cross-sections (i.e., triangular,

As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry and academia. To understand device physics in depth and to assess the performance limits of SNWTs, simulation is becoming increasingly important. The objectives of this thesis are: 1) to theoretically explore the essential physics of SNWTs (e.g., electrostatics, transport and bandstructure) by performing computer-based simulations, and 2) to assess the performance limits and scaling potentials of SNWTs and to address the SNWT design issues. A full three- dimensional, self-consistent, ballistic SNWT simulator has been developed based on the effective-mass approximation with which we have evaluated the upper performance limits of SNWTs with various cross-sections (i.e., triangular,

NEC developed the technology to build high-performance carbon nanotube transistors using the ink-jet printing technology. The technology makes it possible to create more elaborate circuits than the conventional printing technology for higher performance of a transistor. A carbon nanotube transistor is applicable to a thin and bendable display should it be printed on a plastic substrate. The company improved the refinement method of nanotube and increased the purity of nanotube contained in the ink. Besides, it devised the composition of the ink to prevent the exhaust nozzle of a printer from getting clogged even if high concentration ink is used. In the experiment, the technology successfully created a circuit with lines of about 70 micrometers wide. The width of a line that the current technology can print is about several hundreds of micrometers. NEC plans to put the newly-developed technology into practical use in five years. ...

Fingerprint Dive into the research topics of Poly-silicon nanowire field-effect transistor for ultrasensitive and label-free detection of pathogenic avian influenza DNA. Together they form a unique fingerprint. ...

Page contains details about single-walled carbon nanotube-based field-effect transistor . It has composition images, properties, Characterization methods, synthesis, applications and reference articles : nano.nature.com

A thin film transistor (TFT) device structure based on an organic semiconductor material, that exhibits a high field effect mobility, high current modulation and a low sub-threshold slope at lower operating voltages than the current state of the art organic TFT devices. The structure comprises a suitable substrate disposed with he following sequence of features: a set of conducting gate electrodes covered with a high dielectric constant insulator, a layer of the organic semiconductor, sets of electrically conducting source and drain electrodes corresponding to each of the gate lines, and an optional passivation layer that can overcoat and protect the device structure. Use of high dielectric constant gate insulators exploits the unexpected gate voltage dependence of the organic semiconductor to achieve high field effect mobility levels at very low operating voltages. Judicious combinations of the choice of this insulator material and the means to integrate it into the TFT structure are taught that would

A thin film transistor (TFT) device structure based on an organic semiconductor material, that exhibits a high field effect mobility, high current modulation and a low sub-threshold slope at lower operating voltages than the current state of the art organic TFT devices. The structure comprises a suitable substrate disposed with he following sequence of features: a set of conducting gate electrodes covered with a high dielectric constant insulator, a layer of the organic semiconductor, sets of electrically conducting source and drain electrodes corresponding to each of the gate lines, and an optional passivation layer that can overcoat and protect the device structure. Use of high dielectric constant gate insulators exploits the unexpected gate voltage dependence of the organic semiconductor to achieve high field effect mobility levels at very low operating voltages. Judicious combinations of the choice of this insulator material and the means to integrate it into the TFT structure are taught that would

17. A driving method of a semiconductor memory device comprising: a first line; a second line; a first memory cell including a first transistor, a second transistor, and a first capacitor, wherein the first transistor comprises a first semiconductor layer including an oxide semiconductor, wherein one of a source and a drain of the first transistor is electrically connected to the first line, wherein the other of the source and the drain of the first transistor is electrically connected to one of electrodes of the first capacitor and a gate of the second transistor, wherein the other of the electrodes of the first capacitor is electrically connected to the second line, and wherein one of a source and a drain of the second transistor is electrically connected to the first line; and a second memory cell including a third transistor, a fourth transistor, and a second capacitor, wherein the third transistor comprises a second semiconductor layer including the oxide semiconductor, wherein one of a ...

A process of fabricating an improved transistor on a polycrystalline silicon layer, wherein N and P type dopants, in approximate equal concentrations, are introduced into the layer, and the layer heated. The resultant modified polycrystalline silicon layer inhibits the migration of dopants, used to form the active regions of the device, during subsequent heating steps. An improved field effect transistor having a source region, a drain region, and channel region in a polycrystalline silicon layer, the improvement being that the polycrystalline silicon layer has approximately equal concentrations of N and P type dopants embodied therein, which serves to restrain movement of P/N junctions.

Organic semiconductors (OSCs) are of fundamental and technological interest, owing to their properties and functions in a range of optoelectronic devices, including organic light-emitting diodes, organic photovoltaics and organic field-effect transistors, as well as emerging technologies, such as bioelectronic devices. The solid-state organization of the subunits in OSC materials, whether molecular or polymeric, determines the properties relevant to device performance. Nevertheless, the systematic relationships between composition, structure and processing conditions are rarely fully understood, owing to the complexity of the organic architectures and the resulting solid-state structures. Characterization over different length scales and timescales is essential, especially for semi-ordered or amorphous regions, for which solid-state NMR (ssNMR) spectroscopy yields nanoscale insight that can be correlated with scattering measurements and macroscopic property analyses. In this Review, we assess recent

A strategy to minimize the sensing voltage drift error in a transistor biosensor with a nanoscale sensing gate Hyun Woo Son,1,* Minhong Jeun,1,* Jaewon Choi,1,2 Kwan Hyi Lee1,2 1Center for Biomaterials, Biomedical Research Institute, Korea Institute of Science and Technology, Seoul, 2Department of Biomedical Engineering, Korea University of Science and Technology, Daejeon, Republic of Korea *These authors contributed equally to this work Abstract: An ion-sensitive field-effect transistor (ISFET) biosensor is thought to be the center of the next era of health diagnosis. However, questions are raised about its functions and reliability in liquid samples. Consequently, real-life clinical applications are few in number. In this study, we report a strategy to minimize the sensing signal drift error during bioanalyte detection in an ISFET biosensor. A nanoscale SnO2 thin film is used as a gate oxide layer (GOL), and the surface of the GOL is chemically modified for improving bioanalyte-specific binding and

Carbon nanotubes have been implemented in nanoelectromechanical systems, including mechanical memory elements (NRAM being developed by Nantero Inc.) and nanoscale electric motors (see Nanomotor or Nanotube nanomotor). Carboxyl-modified single-walled carbon nanotubes (so called zig-zag, armchair type) can act as sensors of atoms and ions of alkali metals Na, Li, K.[159] In May 2005, Nanomix Inc. placed on the market a hydrogen sensor that integrated carbon nanotubes on a silicon platform. Since then, Nanomix has been patenting many such sensor applications, such as in the field of carbon dioxide, nitrous oxide, glucose, DNA detection, etc. End of 2014, Tulane University researchers have tested Nanomixs fast and fully automated point of care diagnostic system in Sierra Leone to help for rapid testing for Ebola. Nanomix announced that a product could be launched within three to six months. Eikos Inc of Franklin, Massachusetts and Unidym Inc. of Silicon Valley, California are developing ...

But as we eventually discovered, the III-V approach has some fundamental physical limitations. Its also likely to be too expensive and difficult to integrate with existing silicon technology. So a few years ago, my team at Purdue University, in West Lafayette, Ind., began experimenting with a different kind of device: a transistor with a channel made of germanium. Since then, weve demonstrated the first complementary-metal-oxide-semiconductor (CMOS) circuits-the kind of logic inside todays computers-made with germanium grown on ordinary silicon wafers. We have also constructed a range of different transistor architectures using the material. These include nanowire devices, which may be next in line when the present state-of-the-art transistor design, known as the FinFET, cant be miniaturized any longer. Full article: http://spectrum.ieee.org/semiconductors/materials/germani... ...

A method for making a semiconductor device may include forming at least one metal oxide semiconductor field-effect transistor (MOSFET) on a semiconductor substrate. The MOSFET may include spaced-apart source and drain regions, a channel between the source and drain regions, and a gate overlying the channel defining an interface therewith. The gate may include a gate dielectric overlying the channel and a gate electrode overlying the gate dielectric. The channel may include a plurality of stacked base semiconductor monolayers, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor monolayers. The at least one non-semiconductor monolayer may be positioned at depth of about 4-100 monolayers relative to the interface between the channel and the gate dielectric.

This is a custom dual germanium transistor version of our Fuzz Bender Mk I.V. It uses two switchable pairs of hand-selected NOS germanium transistors for more versatility and tonal variation. Each toggle switch allows to have either a Mullard OC75 in the up position, or a Mullard OC84 in the down position. This combination of transistors as well as the extra external bias pot make the pedal exceptionally versatile with a wide tone palette. Also included is a toggle switch on the back for disconnecting the internal battery without having to unplug the pedal. The pedal is housed in a premium GØRVA enclosure in Chameleon finish.. Please note: these custom pedals are not available regularly, and are only built when components are available and when time allows. Please contact us for further information on availability.. Specifications:. ...

Journal of Nanomaterials is a peer-reviewed, Open Access journal that aims to bring science and applications together on nanoscale and nanostructured materials with emphasis on synthesis, processing, characterization, and applications of materials containing true nanosize dimensions or nanostructures that enable novel/enhanced properties or functions. It is directed at both academic researchers and practicing engineers. Journal of Nanomaterials will highlight the continued growth and new challenges in nanomaterials science, engineering, and nanotechnology, both for application development and for basic research. All papers should emphasize original results relating to experimental, theoretical, computational, and/or applications of nanomaterials ranging from hard (inorganic) materials, through soft (polymeric and biological) materials, to hybrid materials or nanocomposites.

0027]It is important to prevent the dehydrated or dehydrogenated oxide semiconductor layer from being exposed to air so as to prevent reincorporation of water or hydrogen. After the dehydration or dehydrogenation, the oxide semiconductor layer is turned into a low-resistance oxide semiconductor layer, that is, an n-type (n--type, n+-type, or the like) oxide semiconductor layer, and then, resistance of the oxide semiconductor layer is increased, whereby an i-type oxide semiconductor layer is formed. When a transistor is formed using such an oxide semiconductor layer, the threshold voltage of the transistor is positive voltage, so that the transistor has a so-called normally-off characteristic. It is preferable for a transistor used in a display device that a channel be formed with a gate threshold voltage that is a positive value and as close to 0 V as possible. As for an active-matrix display device, electric characteristics of a transistor included in a circuit are significant and performance ...

The drain bias induced threshold voltage variation in short channel (L=0.4 μm) polycrystalline silicon thin-film transistors (TFTs), with different gate oxide thicknesses, is investigated with combined experimental measurements and numerical simulations. Drain-induced barrier lowering (DIBL) and floating body effects (FBEs), triggered by impact ionization, are the main causes of such variations. However, the effects are counterbalancing, with a reducing oxide thickness reducing DIBL, while, at the same time, increasing the relative impact of the FBE. Hence, drain bias induced threshold voltage changes, when normalized by oxide thickness, are independent of the gate oxide thickness in these TFTs ...

In 1947, the transistor was invented by a team of Nobel laureates. John Bardeen, Walter Brattain and William Shockley of Bell Laboratories. Invention of transistor was a significant landmark of modern electronics. This invention revolutionized electronic industry due to its feature such as light weight, less power, reliability, low cost etc. Invention of transistor reduced the electronic devices. Demonstration of first colour television happened in 1950 and unipolar field effect transistor was invented by shockley in 1952 ...

Gate modulation in carbon nanotube field effect transistors-based NH3 gas sensors: Single-walled carbon nanotube field effect transistors (CNTFETs) are used as

Carbon nanotubes can be used to make very small electronic devices, but they are difficult to handle. University of Groningen scientists, together with colleagues from the University of Wuppertal and IBM Zurich, have developed a method to select semiconducting nanotubes from a solution and make them self-assemble on a circuit of gold electrodes. The results were published in the journal Advanced Materials (On-chip chemical self-assembly of semiconducting Single-Walled Carbon Nanotubes (SWNTs): towards robust and scale invariant SWNTs transistors).. The results look deceptively simple: a self-assembled transistor with nearly 100 percent purity and very high electron mobility. But it took ten years to get there. University of Groningen Professor of Photophysics and Optoelectronics Maria Antonietta Loi designed polymers which wrap themselves around specific carbon nanotubes in a solution of mixed tubes. Thiol side chains on the polymer bind the tubes to the gold electrodes, creating the resultant ...

Saroj Dash also added We have been working on graphene spintronics for a number of years and we joined the Graphene Flagship because our goals are aligned with that of the Flagship spintronics work package - to investigate room temperature graphene spintronics devices, joining together theoretical and experiment research. The collaborative nature of the Graphene Flagship community, with its focus on face to face meetings has lead to many fruitful discussions within our spintronics field. This collaborative approach also led to a great relationship with our commercial partner Graphenea, who has worked with us to provide the graphene sample we needed ...

The morphology of the semiconductor film is highly dependent on the chemical and physical nature of the dielectric surface. Patterning of dielectric surface can lead to selective patterning of the organic semiconductor in desired locations, which is important to reduce cross talk between devices. With proper control of the dielectric surface, arrays of organic semiconductor single crystals can be patterned over a large area for high performance transistors.3. Great progress has been made in the development of organic semiconductor materials. The initial demonstration of transistor activity in these films was with a narrow group of p-channel thiophene oligomers and polymers. The reported mobilities were on the order of 0.01-0.1 cm2/Vs.4,5 During the last few years, a much broader selection of molecular solids and polymers has been developed, all with mobilities above 0.1 cm2/Vs and achievable on/off ratios greater than 105.1 The chemical structures of some representative materials are shown in ...

Figure 1. Top, 2H-MoTe2 Bottom, 1T-MoTe2. Molybdenum ditelluride (MoTe2) is a crystalline compound that, if pure enough, can be used as a transistor. Its molecular structure is a sandwich made up of one molybdenum atom for every two tellurium atoms. It was first made in the 1960s via several different fabrication methods, but had never been made in a pure enough form to be suitable for electronics. Not only did the IBS-led team succeed in making MoTe2 in pure form, they were also able to make two types of it - the semiconducting variety 2H (hexagonal) and the metallic variety monoclinic 1T (octahedral) of MoTe2 - which are both stable at room temperature. Making MoTe2 in a pure form was very difficult and was seen by some as a black sheep of the transition-metal dichalcogenides (TMD) family and hence ignored. TMDs are molecules that can be made very thin (just several atomic layers thick) and have an energy bandgap that makes them ideal for making electrical components, especially transistors. ...

Evidence of the adsorption of sodium dodecyl sulfate (SDS) residuals on single-walled carbon nanotubes (SWNTs) is shown using x-ray photoelectron spectroscopy. The adsorption of SDS on semiconducting SWNTs (s-SWNTs) is believed to result in deposition and alignment of s-SWNTs between predefined electrode pairs using ac dielectrophoresis. However, the presence of SDS on SWNTs degrades electrical properties of the fabricated devices. Attempts at surface cleaning, aimed at removal of the SDS residuals and formation of an improved contact between the SWNTs and the metal, are described.. ...

Power electronics is expanding as we automate and electrify our households and step into mainstream electric vehicles. Recently, GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) have been increasing in popularity for high voltage power electronics applications because they combine high electron mobility with low gate leakage, increasing efficiency. This comes with the tradeoff of increased reliability concerns to be addressed before the widespread commercialization of GaN MIS-HEMTs. This thesis investigates one failure mechanism found in prototype industrial GaN MIS-HEMTs: time dependent dielectric breakdown (TDDB) of the gate insulator. TDDB occurs when a high electric field causes an accumulation of defects in the gate dielectric, forming a conducting path and rendering the device unusable. This is of major concern in GaN MIS-HEMTs because of their role as switches in high voltage circuits. In this work, we develop testing methodologies to address ...

Publikations-Datenbank der Fraunhofer Wissenschaftler und Institute: Aufsätze, Studien, Forschungsberichte, Konferenzbeiträge, Tagungsbände, Patente und Gebrauchsmuster

Graphene Oxide (GO) is analogous to graphene with oxygen moieties. It offers several advantages over graphene, such as a tunable band-gap, facile synthesis and no use of metal catalysts. Due to the monolayer configuration of GO, all of its carbon atoms are readily exposed to the atmosphere and are sensitive to surface perturbations, thus making GO very suitable for liquid-gated field effect transistor (FET) type sensing applications. However, there are two main limitations preventing GO usage in practical FET sensors. It displays (1) variable coverage between fabricated chips and (2) high electrical resistance. In this paper, we overcome these two limitations by using a facile atmospheric-pressure ethanol Chemical Vapor Deposition treatment on top of pre-coated GO (ECVDGO) which decreases the electrical resistivity from 1.99 × 106 Ω square−1 to 4.68 × 103 Ω square−1, and resistivity variation from 1.60 × 106 to 7.72 × 102 Ω square−1; whilst enlarging the surface GO coverage up to ...

The present invention provides a thin film transistor, wherein the semiconductor channel region is patterned. Gate electrodes 102, gate insulating film 103, source electrodes 104, and drain electrodes 105 are formed on a glass substrate 101. A patterned insulating film is formed thereon, and a part of the film in the region 110 on the gate electrode is removed. An organic semiconductor film is formed thereon by vapor deposition. The organic semiconductor film 107 in the region 110, where the patterned insulating film is removed, becomes a channel region, and is separated from the organic semiconductor film 108 on the patterned insulating film 106. Therefore, the organic semiconductor channel region is patterned to have the same size as the gate electrode. In accordance with the present invention, a thin film transistor, wherein the semiconductor region is patterned precisely, becomes available.

Delays in obtaining medical results from laboratory testing facilities is a well recognised bottleneck in the medical community. Employing methods that utilise real time electronic sensing could recover this potentially life-saving lost time. Such sensors have many applications within the medical field including detection of infectious diseases, biological or chemical weaponry, glucose sensors for diabetic patients, and many more. However we are approaching a time in human history when antibiotics may no longer be an effective way to treat bacterial infections, and as such we have chosen to pursue a bio-sensing device for antibiotic resistant enzymes. Due to the rise of antibiotic resistance in so called super-bugs compounded with the well documented medical bottleneck that results in long waiting times for test results, there is a call for real time bio-sensing devices that can detect antibiotic resistance. Presented in this thesis is work towards a real time bio-sensing device designed to ...

An integrated circuit device includes a plurality of dynamic array sections, each of which includes three or more linear conductive segments formed within its gate electrode level in a parallel manner to extend lengthwise in a first direction. An adjoining pair of dynamic array sections are positioned to have co-located portions of outer peripheral boundary segments extending in the first direction. At least one of the linear conductive segments within the gate electrode level of a given dynamic array section is a non-gate linear conductive segment that does not form a gate electrode of a transistor. The non-gate linear conductive segment of either of the adjoining pair of dynamic array sections spans the co-located portion of outer peripheral boundary segment toward the other of the adjoining pair of dynamic array sections, and is contained within gate electrode level manufacturing assurance halo portions of the adjoining pair of dynamic array

Its been 70 years since the fundamental building block of electronics was created, and it has been getting smaller, and better since then. The invention that won the Nobel prize for John Bardeen, Walter Brattain, and William Shockley in 1956 revolutionized electronics and made it into the IEEE milestone list. Before 1947 computers used vacuum tubes, which could be several inches long, consumed massive amounts of power, and needed to be regularly replaced. Nowadays, billions of transistors can fit in the area of a single vacuum tube, can last for many years and are a lot more efficient.. What is a transistor? For computing, basic binary logic operations are needed in order to perform calculations, so the objective of both vacuum tubes and transistors was to toggle the device between on and off position (1 or 0). A transistor is made from semiconductor material (usually silicon or germanium) capable of carrying current and regulating its flow. The semiconductor is doped which results in a material ...

Scanning spreading resistance microscopy (SSRM) is a technique with a unique combination of high spatial resolution (1 to 3nm) and high sensitivity. SSRM is based on atomic force microscopy and was invented by W. Vandervorst et al. at imec in 1994. During the last decade, it has evolved into the method of choice for carrier profiling in planar MOS transistors. With this work, imec applied HV-SSRM to Si-nanowire-based tunnel-FETs, proving its validity to study carrier distribution in semiconductor nanowires. It also showed that HV-SSRM is capable of revealing physical phenomena which are present in small, 3D structures only, and which cannot be predicted by blanket experiments. Such information is essential for the process development of future nanowire-based devices ...

Freescale Semiconductor says the company has developed the industrys first device that combines the high performance of gallium arsenide (GaAs) semiconductor compounds with the advantages of traditional metal oxide semiconductor field effect transistor (MOSFET) technology and its scaling laws.. This enables the development of new classes of power amplifier and low-power, ultra-fast semiconductors that significantly shrink the size and boost the performance of end devices, the company said. The performance improvements could fundamentally change analog-to-digital conversion technology, potentially making such conversions virtually instantaneous.. Freescales GaAs MOSFET technology holds the promise of having a disruptive impact in the industry, said Asif Anwar, GaAs Services director for industry analyst firm Strategy Analytics. It offers potential leaps in device performance built upon a foundation of mature manufacturing capabilities.. Silicon-based MOSFET technology forms the bedrock of ...

Provided are a transistor which has electrical characteristics requisite for its purpose and uses an oxide semiconductor layer and a semiconductor device including the transistor. In the bottom-gate transistor in which at least a gate electrode layer, a gate insulating film, and the semiconductor layer are stacked in this order, an oxide semiconductor stacked layer including at least two oxide semiconductor layers whose energy gaps are different from each other is used as the semiconductor layer. Oxygen and/or a dopant may be added to the oxide semiconductor stacked layer.

Methods of fabricating a semiconductor devices are disclosed. One example method includes forming a gate insulating layer and a gate electrode on a semiconductor substrate; forming first halo implant regions under the gate electrode in the semiconductor substrate by implanting first conduction type impurities; forming low concentration impurity regions for LDD regions under sides of the gate electrode in the semiconductor substrate by implanting second conduction type impurities at a low concentration; forming second halo implant regions under sides of the gate electrode in the semiconductor substrate by implanting first conduction type impurities; forming high concentration impurity regions for source/drain regions in the semiconductor substrate by implanting second conduction type impurities; and forming junction compensation ion regions between the high concentration impurity regions and the second halo implant regions by implanting first conduction type impurities.

However, Infineon claimed it was the first company to use carbon nanotubes to produce a power transistor, a type of chip used as power switches in applications such as light-emitting diodes and small electric motors.. Infineons prototype power transistor, which consists of 300 carbon nanotubes arranged in parallel, is capable of switching LEDs and electric motors at a voltage of 2.5 volts. Carbon nanotubes had not previously been believed capable of withstanding the high voltages used in power transistors.. In the future, carbon nanotube technology could simplify the production of power transistors and produce chips that are smaller, cheaper, faster and produce less heat than existing technology allows, Infineon said.. The researchers said they had no idea how long it will take to bring the technology into commercial production on a large scale.. Sumner Lemon writes for IDG News Service ...

A semiconductor device includes a substrate portion having a plurality of diffusion regions defined therein. The plurality of diffusion regions are separated from each other by one or more non-active regions of the substrate portion. The plurality of diffusion regions are defined in a non-symmetrical manner relative to a virtual line defined to bisect the substrate portion. The semiconductor device includes a gate electrode level region formed above the substrate portion to include a number of conductive features defined to extend in only a first parallel direction. Each of the number of conductive features within the gate electrode level region is fabricated from a respective originating rectangular-shaped layout feature. The number of conductive features within the gate electrode level region includes conductive features defined along at least four different virtual lines of extent in the first parallel direction across the gate electrode level

Abstract: Vanadium dioxide (VO2) is well known for its metal-insulator transition (MIT) at 341 K.Normally,the VO2 presents a metallic rutile (R) phase above the Tc,but an insulator (monoclinic,M) phase below the Tc.Besides the thermally driven mode,the phase transition can also be triggered electrically,which is common in electron devices like field effect transistors and actuators.Due to the electron correlation,the Mott transition associated with electronelectron interaction as well as the Peierls transition involving electron-lattice interaction are both believed to drive the transition of VO2,although the actual MIT mechanism is still under debate in condensed matter physics.The Coulomb screening of the electron hopping can be broken by injecting enough carriers.However,the issue is more complicated in the electrically-triggered MIT of VO2 due to the Joule heat of current and the carrier injection of field effect.In this work, we study the electrically induced MIT in VO2 nanowires by in-situ ...

(PhysOrg.com) -- A new generation of ultrasmall transistors and more powerful computer chips using tiny structures called semiconducting nanowires are closer to reality after a key discovery by researchers at IBM, Purdue ...

Carbon nanotubes (CNTs) are remarkable solid state nanomaterials due to their unique properties such as high surface area, hollow cavities, and excellent mechanical and electrical properties. Interfacing carbon nanotubes with biological materials could enable significant advances in biomedical applications such as disease diagnosis and treatment. In addition, the bioconjugated nanotubes combine with the sensitive nanotube-based electronic devices would enable sensitive biosensors toward medical diagnostics. This paper presents electronic sensing of antibodies that are specific to HER2 surface receptors in cancer cells with nanotube field effect transistor devices. This paper also presents antibody functionalization of carbon nanotubes and its potential applications for breast cancer diagnostics.

Carbon nanotubes (CNTs) are remarkable solid state nanomaterials due to their unique properties such as high surface area, hollow cavities, and excellent mechanical and electrical properties. Interfacing carbon nanotubes with biological materials could enable significant advances in biomedical applications such as disease diagnosis and treatment. In addition, the bioconjugated nanotubes combine with the sensitive nanotube-based electronic devices would enable sensitive biosensors toward medical diagnostics. This paper presents electronic sensing of antibodies that are specific to HER2 surface receptors in cancer cells with nanotube field effect transistor devices. This paper also presents antibody functionalization of carbon nanotubes and its potential applications for breast cancer diagnostics.

An active matrix liquid crystal display device has a plurality of display electrodes arranged in a matrix array and selectable through control of thin film transistors for application of voltage between selected display electrodes and a common electrode to obtain image display. Each thin film transistor has a semiconductive layer and a gate insulating film both formed to have the same pattern. Each thin film transistor has a gate electrode formed on the gate insulating film with the edges of the gate electrode inwardly spaced apart from the corresponding edges of the gate insulating film. The semiconductor layer and gate insulating film have extensions extending under a corresponding gate bus.

The recent progress in the growth of high-quality single-crystalline diamond films has sparked interest in the realization of efficient diamond power electronic devices. However, finding a suitable passivation is essential to improve the reliability and electrical performance of devices. In the current work, high-k dielectric materials such as aluminum oxide and hafnium oxide were deposited by atomic layer deposition on intrinsic diamond as a surface passivation layer. The hole transport properties in the diamond films were evaluated and compared to unpassivated films using the lateral time-of-flight technique. An enhancement of the near surface hole mobility in diamond films of up to 27% is observed when using aluminum oxide passivation. ...

Electronic spin transport properties of graphene nanoribbons (GNRs) are influenced by the presence of adatoms, adsorbates and edge functionalization. To improve the understanding of the factors that influence the spin properties of GNRs, local (element) spin-sensitive techniques such as electron spin resonance (ESR) spectroscopy are important for spintronics applications. Here, we present results of multi-frequency continuous wave (CW), pulse and hyperfine sublevel correlation (HYSCORE) ESR spectroscopy measurements performed on oxidatively unzipped graphene nanoribbons (GNRs), which were subsequently chemically converted (CCGNRs) with hydrazine. ESR spectra at 336 GHz reveal an isotropic ESR signal from the CCGNRs, of which the temperature dependence of its line width indicates the presence of localized unpaired electronic states. Upon functionalization of CCGNRs with 4-nitrobenzene diazonium tetrafluoroborate, the ESR signal is found to be 2 times narrower than that of pristine ribbons. NH{sub ...

The Focus Group Semiconductor Nanowires presents a joint research program between TUM and the IBM Research Laboratory and aims to develop an innovative platform for novel nanoelectronic and optoelectronic devices based on scaled III-V semiconductor nanowires. In this very active, cutting-edge research field, the fellowship deals with the experimental realization, physical characterization and testing of diverse monolithically integrated III-V nanowire systems and devices on Si platform. As such we will explore e.g. energy-efficient post-CMOS tunnel field effect transistors (TFET), thermoelectric energy conversion (TEC) systems based on nanowires, as well as optoelectronic devices and circuits. Several complementary techniques and core competences of different groups will be merged in this project, including advanced epitaxial growth methods on Si, electrical, optoelectronic and thermoelectric transport characterization including ultrafast pump-probe experiments, as well as device testing in ...

Figure 1: (a) Schematic structure of GaAs JL GAA NWFET and two cross-sectional views across (AA) and parallel to (BB) S/D; (b) SEM image of suspended NWs and raised S/D; (c) focused ion-beam cross section of NW surrounded by gate metal; (d) top-view SEM of fully fabricated JL GAA NWFET and (e) zoomed-in view of gate region.. The epitaxial nanowire and sacrificial aluminium gallium arsenide (AlGaAs) layers were grown on semi-insulating (SI) gallium arsenide, also using MOCVD. The layers were 100nm lattice-matched undoped Al0.6Ga0.4As and 40nm n-type Si-doped GaAs. Source/drain regions were recessed into the epitaxial layers using wet chemical etching to avoid the surface damage cause by plasma processes. Selective MOCVD regrowth of the source/drain regions added 200nm of n-GaAs.. The nanowires were created by sculpting 140nm-high fins in the AlGaAs/GaAs epitaxial layers with dry plasma etching and then removing the sacrificial AlGaAs and silicon dioxide mask using hydrofluoric acid solution. ...

The mobility of carbon nanotubes is about 70 times higher than that of silicon used to manufacture processors and 25% higher than any other known semiconductor material, the researchers said in a report published in online scientific journal Nano Letters.. Mobility is calculated by dividing the conductivity of a particular material by the number of charges it carries, or the amount of current flowing through the material. The result is a measure of how fast electrons move through a transistor.. Its probably the most useful number to know about a semiconductor, said Michael Fuhrer, assistant professor of physics at the University of Maryland and leader of the team of researchers.. Chip manufacturers use transistors built atop silicon wafers to carry electrical current, which trips a gate as it flows through a transistor to produce the millions of bits of information that run a computer. As chip materials continue to grow smaller, more and more current is able to escape from the transistors, ...

Bulk samples can be prepared by heating indium(III) hydroxide or the nitrate, carbonate or sulfate.[8] Thin films of indium oxide can be prepared by sputtering of indium target in argon/oxygen atmosphere. They can be used as diffusion barriers (barrier metals) in semiconductors, e.g. to inhibit diffusion between aluminium and silicon.[9] Monocrystalline nanowires were synthetized from indium oxide by laser ablation, allowing precise diameter control down to 10 nm. Field effect transistors were fabricated from those.[10] Indium oxide nanowires can serve as sensitive and specific redox protein sensors.[11] Sol-gel method is another way to prepare the nanowires. Indium oxide can serve as a semiconductor material, forming heterojunctions with p-InP, n-GaAs, n-Si, and other materials. A layer of indium oxide on a silicon substrate can be deposited from an indium trichloride solution, a method useful for manufacture of solar cells.[12] ...

Conjugated Polymers: Organic heterol (thiophene, selenophene) are good materials organic semiconductor devices. Our research is focused on the following topics: (i) Metodologies development for new aromatic moieties. (ii) Electrochemical and chemical polymerisation for the synthesis of conjugated polymers. (iii) Molecular designing to control optical band gap, oxidation stability, and solution processebility (iv) Application of polymers in organic semiconducting devices like Field Effect Transistor (FET), Bulk Heterojunction Solar Cells. Metal Organic Framework, Supramolecular Assembly and catalysis: Synthesis and complexation behaviour of thio and selenosalen podant type ligating molecules. Their assembly and packing behaviour. Reactivity of these lingand towards different metal ions specially Pd, Pt, and Hg ions. Uses of Pd and Pt salenosalen lingand for catalysing different reaction like, Suzuki, Heck coupling. Conjugated Macrocycles: Macrocyclic system containing heterol ring like pyrrole, ...

Cava is a quality sparkling wine produced in Spain. As a product with a designation of origin, Cava wine has to meet certain quality requirements throughout its production process; therefore, the analysis of several parameters is of great interest. In this work, a portable electronic tongue for the analysis of Cava wine is described. The system is comprised of compact and low-power-consumption electronic equipment and an array of microsensors formed by six ion-selective field effect transistors sensitive to pH, Na+, K+, Ca2+, Cl−, and CO32−, one conductivity sensor, one redox potential sensor, and two amperometric gold microelectrodes. This system, combined with chemometric tools, has been applied to the analysis of 78 Cava wine samples. Results demonstrate that the electronic tongue is able to classify the samples according to the aging time, with a percentage of correct prediction between 80% and 96%, by using linear discriminant analysis, as well as to quantify the total acidity, pH, volumetric

Nanoelectronics refer to the use of nanotechnology in electronic components. The term covers a diverse set of devices and materials, with the common characteristic that they are so small that inter-atomic interactions and quantum mechanical properties need to be studied extensively. Some of these candidates include: hybrid molecular/semiconductor electronics, one-dimensional nanotubes/nanowires (e.g. Silicon nanowires or Carbon nanotubes) or advanced molecular electronics. Recent silicon CMOS technology generations, such as the 22 nanometer node, are already within this regime. Nanoelectronics are sometimes considered as disruptive technology because present candidates are significantly different from traditional transistors. In 1965 Gordon Moore observed that silicon transistors were undergoing a continual process of scaling downward, an observation which was later codified as Moores law. Since his observation transistor minimum feature sizes have decreased from 10 micrometers to the 28-22 nm ...

Monitoring the molecular recognition, binding, and disassociation between probe and target is important in medical diagnostics and drug screening, because such a wealth of information can be used to identify the pathogenic species and new therapeutic candidates. Nanoelectronic biosensors based on silicon nanowire field-effect transistors (SiNW-FETs) have recently attracted tremendous attention as a promising tool in the investigation of biomolecular interactions due to their capability of ultrasensitive, selective, real-time, and label-free detection. Herein, we summarize the recent advances in label-free analysis of molecule-molecule interactions using SiNW-FETs, with a discussion and emphasis on small molecule-biomolecule interaction, biomolecule-biomolecule interactions (including carbohydrate-protein interaction, protein-protein or antigen-antibody binding, and nucleic acid-nucleic acid hybridization), and protein-virus interaction. Such molecular recognitions offer a basis of biosensing and ...

Monitoring the molecular recognition, binding, and disassociation between probe and target is important in medical diagnostics and drug screening, because such a wealth of information can be used to identify the pathogenic species and new therapeutic candidates. Nanoelectronic biosensors based on silicon nanowire field-effect transistors (SiNW-FETs) have recently attracted tremendous attention as a promising tool in the investigation of biomolecular interactions due to their capability of ultrasensitive, selective, real-time, and label-free detection. Herein, we summarize the recent advances in label-free analysis of molecule-molecule interactions using SiNW-FETs, with a discussion and emphasis on small molecule-biomolecule interaction, biomolecule-biomolecule interactions (including carbohydrate-protein interaction, protein-protein or antigen-antibody binding, and nucleic acid-nucleic acid hybridization), and protein-virus interaction. Such molecular recognitions offer a basis of biosensing and ...

Carbonaceous materials are considered as potential adsorbents for organic dyes due to their unique structures which provide high aspect ratios, hydrophobic property, large efcient surface area, and easy surface modifcation. In this work, graphene nanoribbons (GNRs) were prepared by atomic hydrogen-induced treatment of single-walled carbon nanotube (SWCNTs), which inspire the idea of cutting and unzipping the SWCNTs carpets with the modifed in molecules prevent because of the unfolding of the sid

Krishna C. Saraswat, Professor Fabrication Processes, Device Structures, Materials and Equipment for Microelectronics and Flat Panel Display Manufacturing; Associate Director of the NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing Saraswat is working on a variety of problems related to new and innovative materials, device structures, and process technology of silicon devices and integrated circuits. Special areas of his interest are thin film MOS transistors (TFTs) on insulator for 3-D multilayer ICs and flat panel displays; ultrathin MOS gate dielectrics; thin film technology for VLSI interconnections and contacts; process and equipment modelling; rapid thermal processing; IC process and design automation; and development of tools and methodology for simulation and control of a manufacturing line. His group has developed several simulators for process, equipment and factory performance simulations, such as, SPEEDIE for etch and deposition simulation, ...

In this thesis a design of a CMOS transimpedance amplifier (TIA) for a capacitive micro-machined ultrasonic transducer (CMUT) is presented. CMUTs have a high electrical impedance when used as receivers. Any capacitance between the CMUT and a high impedance amplifier will degrade the frequency response. So, we need to amplify the current rather than the voltage. This approach requires a transimpedance amplifier. The designed TIA has a 30 MHz bandwidth and 400 kΩ transimpedance gain. The total input referred current noise of the TIA is 270 fA/√Hz at 10 MHz. The noise figure of the TIA is 2.7 dB at 10 MHz when connected to the CMUT with 200 kΩ source resistance. The power consumption of the TIA is 10.5 mW and the size of the TIA layout is 133µm x 45µm. The TIA chip will be fabricated in AMS C35B4C3 (0.35µm) process ...

TY - JOUR. T1 - Tin oxide meshes consisting of nanoribbons prepared through an intermediate phase in an aqueous solution. AU - Uchiyama, Hiroaki. AU - Imai, Hiroaki. PY - 2007/5/1. Y1 - 2007/5/1. N2 - Novel nanoarchitectures of SnO and SnO2 crystals that had two- and three-dimensionally meshed structures consisting of nanoribbons were prepared through Sn6U4(OH)4 as an intermediate state. Two-dimensional meshes consisting of oriented nanoribbons of single-crystalline tin monoxide (SnO) that was 50-300 nm wide were grown via Sn6O4(OH)4, which was initially produced at room temperature. Textured spherical particles with three-dimensional meshed nanostructures were produced at 60°C in the presence of citric acid in the aqueous system. The formation of the specific architectures is ascribed to the densely branching growth of SnO crystals in a matrix of Sn6O 4(OH)4 as a reactant. The meshed nanostructures of rutile-type tin dioxide were successfully obtained by oxidation of the SnO crystals without ...

Nanowires (NWs) and nanotubes (NTs) are considered to be of great importance for future nanotechnology applications, due to the roles of dimensionality and small system size. Potential applications of NWs and NTs range from field-effect transistors to biological applications. However, the one-dimensional (1D) nanostructures and most of their applications are still in an early stage of technical development. There are several issues that need to be addressed before they are ripe for industrial applications. Irradiation has been widely used in semiconductor industry to modify the properties of materials since the 1950s. Irradiation in 1D nanomaterials has been studied to tailor the mechanical, electronic, optical and even magnetic properties in a controlled manner, to improve the functionality of the devices based on the 1D nanomaterials. This thesis focuses on the structural and mechanical modifications of the 1D nanomaterials under energetic ion irradiation, as well as the formation mechanisms ...

download c software for windows 7 the best sites in world programming compiler free 64 bit 32bic programming software free download for windows 7 64 bit compiler maxresdehamilton c shell wikipedia the free encyclopedia programming compiler download for windows 7 64 bit hamilton_c_shell_x64_on_wind ...

Metal insulator silicon carbide field-effect transistor sensors, metal-oxide sensors, and a linear Lambda sensor in an electronic nose was used to measure on-line in hot flue gases from a boiler. Flue gas from a 100-MW pellets-fuelled boiler has been used to feed the experimental setup. Several reference instruments, which measure the flue gases in parallel to the sensor array, are connected to the electronic nose. Data was collected during six weeks and then evaluated. Using principal component analysis as the data evaluation method, different operating modes for the boiler have been identified in the data set. The different modes could be described in terms of high or low O 2 and CO concentration. Furthermore, we have shown that it seems possible to use a sensor array to determine the operating mode of the boiler and, by partial least-squares models, measure the CO concentration when the boiler operates in its optimum mode.. ...

FRET Mei J, Li Y-T, Zhang H, Xiao M-M, Ning Y, Zhang Z-Y, Zhang G-J. Molybdenum Disulfide Field-Effect Transistor Biosensor for Ultrasensitive Detection of DNA by Employing Morpholino as Probe. Biosens Bioelectr. 2018;{Epub ahead of print] doi:10.1016/j.bios.2018.03.043 Rosenfeld T, Bercovici M. Amplification-free detection of DNA in a paper-based microfluidic device using electroosmotically balanced isotachophoresis. Lab Chip. 2018 Feb 20. doi: 10.1039/c7lc01250k. [Epub ahead of print] Zeidman Kalman T, Khalandovsky R, Tenenbaum Gonikman E, Bercovici M. Monitoring dissociation kinetics during electrophoretic focusing enables high-specificity nucleic acid detection. Angew Chem. 2018;[Epub ahead of print] doi:10.1002/ange.201711673 Cheung LS, Wei X, Martins D, Song Y-A. Rapid detection of exosomal microRNA biomarkers by electrokinetic concentration for liquid biopsy on chip. Biomicrofluidics. 2018;12:014104. doi:10.1063/1.5009719 Pavlova AS, Dyudeeva ES, Kupryushkin MS, Amirkhanov NV, Pyshnyi DV, ...

A MEMS optical device includes a MEMS image array and a self-aligned microlens array. The MEMS image array includes a number of individual channels. The microlens array includes individual microlenses, each of which is associated with one of the channels of the MEMS image array. The microlens array is formed directly on the MEMS image array using semiconductor fabrication techniques. Each microlens is automatically aligned with its respective channel within the image array. The need for precise and expensive manual alignment of the MEMS image array and the microlens arrays is avoided. Improvements in the fill factor and the transmission efficiency of the optical device are realized. Further, by tailoring the refractive index of the lens relative to both the substrate and the ambient air, the total internal reflection phenomenon can be exploited, for additional improvement in the transmission efficiency of the optical device.

The brushless motor has large FETs (Subject Effect Transistors) and highly durable electronic circuits for superior durability. Coming Quickly: Physique measurements are correlated with obesity related disease, which docs use to assess and stratify danger. While the cellphone didnt make Zacks shelf of shame, it barely passed his durability test. The fact is more males are training the art of physique hair elimination and reworking the grooming interest into a life-style alternative.. The imply fatigue life prediction error is approximately 30.7%. The vast majority of fatigue damage to the car body takes place at or below 15Hz and the dynamic conduct of the locomotive performs a major role in incidence of car body construction fatigue failure.. The OneBlade Face + Physique actually guides males on the suitable path to hair removal serviceability. All of them gave knowledgeable consent and body composition testing was performed earlier than initiating of adjuvant chemotherapy. However should ...

2012 Hong-Ru Lin, Hsin-Yuan Miao*, Jih-Hsin Liu, Chih-Wei Lin, Jeng Gong, The Low Temperature Resistance Test of Buckypaper and Its Microwave Application, IUMRS-ICA, Procedia Engineering, (EI)2008 K.T. Lee, J. Gong and B.H. Liou, Electrical Characteristics of Al2O3/TiO2 Nanolaminate Dielectrics on GaN, 215th ECS Meeting, San Francisco, USA, Other, 會議論文(Others), 2009-05-01-2009-05-012008 C.T. Lee, K.T. Lee and J. Gong, Electrical Characterization of High-k Anodic Aluminum Oxide Gate Dielectrics on Gallium Nitride Substrate MOS Capacitors, 215th ECS Meeting, San Francisco, USA, Other, 會議論文, 口頭報告(Others), 2009-05-01-2009-05-012008 K.T. Lee, Y.C. Lee and J. Gong, Thermal and Optical Improvement of Light-emitting Diodes with Mesh Pattern on Sapphire Back Delineated by Laser Etching, PRiME 2008 (214th ECS Meeting), Other, 會議論文(Others), 2008-10-01-2008-10-012008 Kuo-Pin Chang, Wei-Chih Chien, Yi-Chou Chen, Erh-Kun Lai1, Shih-Chang Tsai, Sheng-Hui, Hsieh, Yeong-Der Yao, ...

This paper reports on positive lateral nonuniform (LNU) charge generation in silicon dioxide, and its relationship to transient or ac stress-induced leakage current (SILC), for MOS capacitor devices subjected to high-field current impulse stressing using a transmission line pulsing technique. The formation of LNU charge was attributed to the localized injection of avalanche hot carriers from the silicon substrate together with the accompanying impact ionization within the oxide. The short stress pulse duration was identified as an important factor for the generation of LNU charge as a longer duration stress pulse or dc stressing gives rise to more uniform charge trapping. A model, consisting of several similar area and equivalent MOS capacitors connected in parallel, was used to explain the effect of LNU charge generation on the high-frequency capacitance-voltage curves. Electrical annealing results indicate that the positive LNU charge traps are located close to the silicon-oxide interface. The ...

Buy, download and read Luminous Chemical Vapor Deposition and Interface Engineering ebook online in PDF format for iPhone, iPad, Android, Computer and Mobile readers. Author: Hirotsugu Yasuda. ISBN: 9781420030297. Publisher: CRC Press. Providing in-depth coverage of the technologies and various approaches, Luminous Chemical Vapor Deposition and Interface Engineering showcases the development and utilization of LCVD procedures in ind

TY - JOUR. T1 - Correlation between electrical and surface properties of n-GaN on sapphire grown by metal-organic chemical vapor deposition. AU - Nakada, Naoyuki. AU - Mori, Masayoshi. AU - Ishikawa, Hiroyasu. AU - Egawa, Takashi. AU - Jimbo, Takashi. PY - 2003/5. Y1 - 2003/5. N2 - Lightly doped n-GaN epilayers were grown by metal-organic chemical vapor deposition (MOCVD) on sapphire substrates. The grown n-GaN epilayers were characterized using atomic force microscopy (AFM), X-ray diffraction (XRD), photoluminescence and Hall effect measurements. Enhanced PL intensity and low dark spot density (DSD) were observed on the aligned step structure n-GaN. The samples with these aligned step structure showed high electron mobilities with good structural and optical properties, while the samples with the anisotropic step structure showed broadened XRD FWHM values, low mobilities, and poor structural and optical properties. The low Hall mobility of n-GaN is due to the scattering of charged threading ...

An electrical circuit provides a variety of stable and reliable bias voltages to accommodate the bias requirements of various sensor types. The electrical circuit comprises a programmable analog circuit capable of maintaining a plurality of programmable threshold voltages and producing a plurality of intermediary voltages. Such voltages act as an input to a differential amplifier that outputs a bias voltage within a range consistent with said programmable threshold voltages. The bias voltage is further conditioned by a conditioning amplifier that further stabilizes the bias voltage to an attached sensor.

Along with her work on flexible electronics, Baos group at Stanford is studying polymer-based solar cells, carbon nanotube-based electronics and single-molecule nanoelectronics. She also has started a research collaboration with her husband, Jeff Tok, a biologist at Lawrence Livermore National Laboratory, on DNA-templated nanoelectronics. Her latest study, which appeared in the March 8 issue of the Journal of the American Chemical Society, describes a stamping technique to make thin-film transistors with complex patterns. Source: ...

Graphene has become one of the most widely studied 2D materials since its separation by Geim-Novoselov in 2004. It has been used in a wide range of applications due to its incredible carrier mobility, mechanical strength and thermal conductivity. The applications of graphene are ranging from electronics to energy storage and conversion. Chemical vapor deposition (CVD) is a common method for growing graphene on a metal surface as a catalyst, since it promotes growth of large area and high uniform graphene film. This requires an additional step to transfer graphene onto other target substrates toward fabrication of graphene-based devices. Graphene transfer process comprises many challenges such as presence of polymeric/metal residuals, generation of several extrinsic defects (tears, cracks and wrinkles) and weak adhesion between graphene and underlying target substrate. All these kinds of imperfections degrade graphene properties and hence affect the performance of the fabricated graphene-based ...

Based on a facile vapor-phase transport method without any catalyst and template, one-dimensional single-crystalline bismuth oxide (Bi2O3) micro/nanoribbons were fabricated on silicon substrates in large quantities and morphology-controlled fabrication of Bi2O3 was achieved from a single precursor. The widths of Bi2O3 ribbons varied from 0.2 to 20 μm depending on the deposition temperatures. The thickness was in the range of 0.1-2 μm and the length reached several hundred micrometers and even millimeter range. The detailed composition and structural analysis confirmed the single-crystalline nature of α-Bi2O3 micro/nanoribbons with monoclinic structure. The photoluminescence spectrum of a single Bi2O3 ribbon showed a broadband emission from 450 to 750 nm in the visible region, consisting two peaks located at 589 and 697 nm which were primarily originated from the impurity ions and crystal defects. A self-catalyzed vapor-solid model was proposed to account for the growth mechanism of Bi2O3 ...

A study on the influence of phosphorus implanted source/drain features on the off-state performance of transistors fabricated in thin-film crystalline silicon at low temperature is presented. Complementary Metal Oxide Semiconductor (CMOS) thin film transistors (TFTs) were fabricated on silicon-on-insulator (SOI) substrates; both NFET and PFET devices in the same p-type layer. Lightly Doped Drain (LDD) features were implemented on NFETs, and a surface-halo source barrier (N-barrier) was implemented on PFETs, using a common implant step. A new mask set was designed with fine resolution of gate offset to investigate small changes in placement of the LDD/ N-barrier structures. The focus of this investigation was the off-state characteristics of the devices; the implanted features were designed to help suppress the effects of Gate Induced Drain Leakage (GIDL) and Drain Induced Barrier Lowering (DIBL). Along with the mask design offsets, a number of process variations resulted in TFTs with different degrees

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Emerging macro- and flexible electronic applications such as foldable displays, artificial skins, and smart textiles grow rapidly into the market. Solution-processed thin-film transistors (TFTs) based on single-walled carbon nanotubes (SWCNTs) as the semiconductor channel can offer high performance, low cost and versatility for macro- and flexible electronics. Major challenges to the development of SWCNT-based TFTs include: (i) hysteresis in their transfer characteristics (TCs), (ii) difficulties in simultaneous achievements of high on-state current Ion and large on/off current ratio Ion/Ioff, and (iii) poor uniformity and scalability resulting from the poor solution processability. This thesis aims at developing reliable and simple process techniques for fabrication of the SWCNT-based TFTs that possess the afore-stated characteristics. It presents a systematic investigation to not only explore the fundamental device physics, but also develop novel fabrication methods for enhancement of device ...

In recent years, the increasing use of active matrix flat-panel displays and bio-medical imagers in commercial electronic products has drawn a significant attention to thin-film transistors (TFT) and technologies. TFTs on amorphous- and poly-silicon as well as newly emerging organic, transparent metal oxide and nano-composite semiconductor technologies are becoming increasingly common. For example, flat panel displays are finding widespread use in many products such as cellular phones, personal digital assistants (PDAs), camcorders, laptop personal computers (PCs), to name a few. The active matrix display is composed of a grid or matrix of picture elements called as pixels. Thousands or millions of these pixels together create an image on the display, in which the TFTs act as switches to individually turn each pixel. More increasingly TFTs are starting to be used as analog circuit elements for rudimentary signal conditioning. Therefore, physically-based compact modeling of TFTs for circuit ...