Single-walled carbon nanotube field-effect transistors with thin tunnel barriers were investigated, and room-temperature single-electron transistor (SET) operation was realized. Single-walled carbon nanotubes were grown by thermal chemical vapor deposition at 820 degrees Celsius for 10 min using ethanol as a carbon source after forming patterned cobalt catalyst layer by conventional photolithography method. Thin tunnel barrier layer, which was oxidized 1-nm-thick aluminum layer, was inserted between nanotube channel and electrodes in order to enhance carrier confinement. Gate voltage dependences of the drain current were measured at 290 K. Clear Coulomb oscillations could be observed for the sample with tunnel barrier layer while only conventional ambipolar characteristics of conventional carbon nanotube field-effect transistors could be observed for the sample without tunnel barrier layer. These results indicate that formation of thin tunnel barrier layer is very effective for realization of SET

Freddy G. del Pozo, Simone Fabiano, Raphael Pfattner, Stamatis Georgakopoulos, Sergi Galindo, Xianjie Liu, Slawomir Braun, Mats Fahlman, Jaume Veciana, Concepció Rovira, Xavier Crispin, Magnus Berggren, Marta Mas-Torrent; Advanced Functional Materials - August 2015 - http://dx.doi.org/10.1002/adfm.201502274 In electronics, the field-effect transistor (FET) is a crucial cornerstone and successful integration of this semiconductor device into circuit applications requires stable and ideal electrical characteristics over a wide range of temperatures and environments. Solution processing, using printing or coating techniques, has been explored to manufacture organic field-effect transistors (OFET) on flexible carriers, enabling radically novel electronics applications. Ideal electrical characteristics, in organic materials, are typically only found in single crystals. Tiresome growth and manipulation of these hamper practical production of flexible OFETs circuits. To date, neither devices nor any ...

The kinetics of trap formation and dissociation is investigated in organic field-effect transistors to understand how the dielectric surface affects device stability. Devices with surface treatment of octadecyl-trichlorosilane (OTS) show faster trapping rates than those on an untreated oxide dielectric. Trap release is also quicker from the OTS interface compared to the untreated interface, thus implying that traps have lower barriers in the OTS interface than in the untreated interface. Images of trap distribution are obtained by electric force microscopy (EFM) for polyfluorene transistors, but the traps in polythiophene transistors could not be imaged due to shielding charges.

The kinetics of trap formation and dissociation is investigated in organic field-effect transistors to understand how the dielectric surface affects device stability. Devices with surface treatment of octadecyl-trichlorosilane (OTS) show faster trapping rates than those on an untreated oxide dielectric. Trap release is also quicker from the OTS interface compared to the untreated interface, thus implying that traps have lower barriers in the OTS interface than in the untreated interface. Images of trap distribution are obtained by electric force microscopy (EFM) for polyfluorene transistors, but the traps in polythiophene transistors could not be imaged due to shielding charges.

In this letter light emission from a pentacene-based ambipolar organic field-effect transistor is reported. Electroluminescence appears from a narrow region extending over the entire transistor channel width. The position of the light-emitting recombination zone is spatially controllable by the applied voltages. The current/voltage characteristics of the ambipolar device exhibit a hysteresis caused by trapped electrons in the transistor channel, which is also mirrored in the voltage dependent position of the light-emitting region. From the voltage dependence of the light intensity it can be concluded that Ohmic contacts are formed between pentacene and the utilized metal contacts calcium and gold ...

Despite the recent interest in organic electrochemical transistors (OECTs) as chemical and biological sensors, little is known about the role that device architecture and materials parameters play in determining sensor performance. We use numerical modeling to establish design rules in two regimes of operation: We find that for operation as an ion-to-electron converter, the response of OECTs is maximized through the use of a gate electrode that is much larger than the channel or through the use of a nonpolarizable gate electrode. Improving the conductivity of the polymer and using a channel geometry that maximizes channel width and thickness, and minimizes channel length helps increase the response. For operation as an electrochemical sensor, the sensitivity is maximized in OECTs with gate electrodes that are smaller than their channels. The sensitivity can be improved by increasing the charge carrier mobility and the capacitance per unit area of the conducting polymer, and also its ability to ...

Organic field-effect transistors (OFETs) are potential components for large-area electronics because of their attractive advantages: light weight, cost-effective and large-area processability, flexibility and resonable performance potential. However, the commercialization of OFETs faces several technical obstacles. Low mobility of organic semiconductors limits the current-carrying capacity; high operation voltage restricts their use in many applications; easy degradation in air and instability under electrical stress usually make the lifetime too short to be useful; and contact resistance and contact matching also limit the charge injection to the semiconductor. Many of the above problems relate to interfaces in OFETs. There are two important interfaces in OFETs. The interface between organic semiconductor and the dielectric layer is of crucial importance since it is the location where charge transport in the channel occurs. The other important interface in OFETs is between the semiconductor and the

High frequency S parameters characterization up to 10 GHz for back-gate carbon nanotube field-effect transistors (CNFETs) was carried for the first time. T

The ability to tune the VTH of an OFET is of great interest when designing integrated circuits. Complementary circuit design, which includes n- and p-channel transistors, dominates the electronic industry today; however, unipolar circuits are generally easier to manufacture and are sufficient for analyzing the impact of the modification of the VTH. Hence, in this work, logic inverters, in many respects the simplest kinds of integrated circuits, that use a unipolar circuit design are analyzed. An inverter has two components: a load (L) and a driver (D). The driver is a transistor, typically of enhancement mode type, whereas the load can be a resistor or another transistor. Two load transistor configurations are possible: the diode-load and the depleted-load (or zero-gate load). The latter configuration shows better static behavior but is typically slower to switch (28), and is used in this work. In the depleted-load configuration (Fig. 3A inset), the gate of the load transistor is connected to ...

16. A fabrication process for fabricating a field-effect transistor device implemented on a network of vertical nanowires, including a plurality of elementary transistors, each elementary transistor comprising a source electrode and a drain electrode each positioned at one end of a vertical nanowire of the network and connected by a channel and each elementary transistor including a gate electrode surrounding each vertical nanowire of the network, the drain, source and gate electrodes of the elementary transistors implemented on the nanowires are respectively connected to each other so as to form unique drain, source and gate electrodes of the transistor device, wherein it comprises the following steps: producing source and drain electrodes at each end of each vertical nanowire, the source and drain electrodes being positioned symmetrically with respect to the gate electrode of each elementary transistor implemented on a nanowire; creating a gate electrode by depositing a layer of dielectric ...

There has been a remarkable progress in the development of organic electronic materials since the discovery of conducting polymers more than three decades ago. Many of these materials can be processed from solution, in the form as inks. This allows for using traditional high-volume printing techniques for manufacturing of organic electronic devices on various flexible surfaces at low cost. Many of the envisioned applications will use printed batteries, organic solar cells or electromagnetic coupling for powering. This requires that the included devices are power efficient and can operate at low voltages.. This thesis is focused on organic thin-film transistors that employ electrolytes as gate insulators. The high capacitance of the electrolyte layers allows the transistors to operate at very low voltages, at only 1 V. Polyanion-gated p-channel transistors and polycation-gated n-channel transistors are demonstrated. The mobile ions in the respective polyelectrolyte are attracted towards the gate ...

DIY YD-CS Transistor Tester Kit voor multimeter Meter Weerstand Condensator Triode elektronische meting met Shell online . Transistor testers are instruments for testing the electrical behavior of transistors and solid-state. Compare prices on multimeter transistor tester to find great deals and . A transistor socket is used to connect the transistor under test , a multimeter switched to DC Milliamps can be connected to terminals Mand Mto measure . Shop with confidence on eBay! Its the current gain of the transistor under test for that particular Ib. Hfe is usually in the range . Easy to use, just select the test type and range with . Get excited offers, read HTC DM 81 . Manual Ranging Tool Kit DMM with Transistor Test. Most digital multimeters look like this: = Display, = Function switch, = Transistor socket (optional), 4. Multimeters or ohmmeters are suitable for . Some multimeters have additional features such as transistor testing and ranges for.. Testing small numbers of transistors will ...

It is an object to form a high quality gate insulating film which is dense and has a strong insulation resistance property, and to propose a high reliable organic transistor in which a tunnel leakage current is little. One mode of the organic transistor of the present invention has a step of forming the gate insulating film by forming the conductive layer which becomes the gate electrode activating oxygen (or gas including oxygen) or nitrogen (or gas including nitrogen) or the like using dense plasma in which density of electron is 1011 cm−3 or more, and electron temperature is a range of 0.2 eV to 2.0 eV with plasma activation, and reacting directly with a portion of the conductive layer which becomes the gate electrode to be insulated.

TY - JOUR. T1 - Sensitivity enhancement of Si nanowire field effect transistor biosensors using single trap phenomena. AU - Li, Jing. AU - Pud, Sergii. AU - Petrychuk, Michail. AU - Offenhäusser, Andreas. AU - Vitusevich, Svetlana. PY - 2014/6/11. Y1 - 2014/6/11. N2 - Trapping-detrapping processes in nanostructures are generally considered to be destabilizing factors. However, we discovered a positive role for a single trap in the registration and transformation of useful signal. We use switching kinetics of current fluctuations generated by a single trap in the dielectric of liquid-gated nanowire field effect transistors (FETs) as a basic principle for a novel highly sensitive approach to monitor the gate surface potential. An increase in Si nanowire FET sensitivity of 400% was demonstrated.. AB - Trapping-detrapping processes in nanostructures are generally considered to be destabilizing factors. However, we discovered a positive role for a single trap in the registration and transformation ...

Metal-oxide semiconductor field-effect transistor (MOSFET) scaling throughout the years has enabled us to pack million of MOS transistors on a single chip to keep in pace with Moores Law. After forty years of advances in integrated circuit (IC) technology, the scaling of silicon (Si) MOSFET has entered the nanometer dimension with the introduction of 90 nm high volume manufacturing in 2004. The latest technological advancement has led to a low power, high-density and high-speed generation of processor. Nevertheless, the scaling of the Si MOSFET below 22 nm may soon meet its fundamental physical limitations. This threshold makes the possible use of novel devices and structures such as carbon nanotube field-effect transistors (CNTFETs) and graphene nanoribbon field-effect transistors (GNRFETs) for future nanoelectronics. The investigation explores the potential of these amazing carbon structures that exceed MOSFET capabilities in term of speed, scalability and power consumption. The research ...

The halo implant technique described herein employs a halo implant mask that creates a halo implant shadowing effect during halo dopant bombardment. A first transistor device structure and a second transistor device structure are formed on a wafer such that they are orthogonally oriented to each other. A common halo implant mask is created with features that prevent halo implantation of the diffusion region of the second transistor device structure during halo implantation of the diffusion region of the first transistor device structure, and with features that prevent halo implantation of the diffusion region of the first transistor device structure during halo implantation of the diffusion region of the second transistor device structure. The orthogonal orientation of the transistor device structures and the pattern of the halo implant mask obviates the need to create multiple implant masks to achieve different threshold voltages for the transistor device structures.

A field effect transistor includes a semiconductor substrate having a first conduction type and functioning as a drain of the field effect transistor, and a back gate region formed in the semiconductor substrate and having a second conduction type opposite to the first conduction type. The field effect transistor also includes a source region formed in the back gate region and having the first conduction type, an insulator film formed on the semiconductor substrate and having first and second windows, and a gate electrode covered by the insulator film and located so that a channel is formed in the back gate region. Further, the field effect transistor includes a guard region formed in the semiconductor substrate and located close to the back gate region. The guard region has the second conduction type, and has a first portion located on a first side of the guard region facing the back gate region and a second portion located on a second side opposite

In order for carbon nanotube (CNT) electrical devices to be fabricated, it is necessary to obtain modifiable operation characteristics. Developing parametric equations to achieve this controllability in the vertical field-effect transistor (FET) design is an important first step toward fabrication. The capacitances associated with the physical geometry of the porous anodic alumina (PAA)-based CNTFET are explored and developed into a parametric equation for the unity current gain frequency (fT) ...

In order for carbon nanotube (CNT) electrical devices to be fabricated, it is necessary to obtain modifiable operation characteristics. Developing parametric equations to achieve this controllability in the vertical field-effect transistor (FET) design is an important first step toward fabrication. The capacitances associated with the physical geometry of the porous anodic alumina (PAA)-based CNTFET are explored and developed into a parametric equation for the unity current gain frequency (fT) ...

The invention relates to an organic field effect transistor which is especially characterized by a cross-linked, structured insulating layer (4) on which the gate electrode (5) is arranged. The structure of the OFET ensures that the gate electrode (5) of an OFET can be used as a strip conductor to the source electrode (2) of the next transistor and can be used in the construction of larger circuits.

OECTs consist of a semiconductor film (the channel), usually made of a conjugated polymer, which is in direct contact with an electrolyte. Source and drain electrodes establish electrical contact to the channel, while a gate electrode establishes electrical contact to the electrolyte. The electrolyte can be liquid, gel, or solid. In the most common biasing configuration, the source is grounded and a voltage (drain voltage) is applied to the drain. This causes a current to flow (drain current), due to electronic charge (usually holes) present in the channel. When a voltage is applied to the gate, ions from the electrolyte are injected in the channel and change the electronic charge density, and hence the drain current. When the gate voltage is removed, the injected ions return to the electrolyte and the drain current goes back to its original value. OECTs are different from electrolyte-gated field-effect transistors. In the latter type of device, ions do not penetrate into the channel, but rather ...

TY - JOUR. T1 - Surface functionalization of ion-sensitive floating-gate field-effect transistors with organic electronics. AU - Zhang, Qi. AU - Majumdar, Himadri. AU - Kaisti, Matti. AU - Prabhu, Alok. AU - Ivaska, Ari. AU - Österbacka, Ronald. AU - Rahman, Arifur. AU - Levon, Kalle. N1 - fys. analyten. PY - 2015. Y1 - 2015. N2 - Electrically conducting polymers are advantageous hybrid materials for microelectronic biosensors due to their high bandgap sensitivity, possibilities for nanoscale surface area formation, and well-developed surface bioconjugation strategies. In this paper, we investigated whether those organic conductors can also be used to functionalize ion-sensitive floating-gate field-effect transistors (ISFGFETs) designed to measure biological binding events. We first subjected our device to 100% relative humidity (RH) and proved its viability in such a humid environment. Subsequently, we drop-casted viscoelastic polyaniline emeraldine salt on pristine transistors to construct ...

The invention relates to an organic fieId-effect transistor, to a method for structuring an OFET and to an integrated circuit with improved structuring of the functional polymer layers. The improved structuring is obtained by introducing, using a doctor blade, the functional polymer in the mold layer in which recesses are initially produced by imprinting.

A DNA field-effect transistor (DNAFET) is a field-effect transistor which uses the field-effect due to the partial charges of DNA molecules to function as a biosensor. The structure of DNAFETs is similar to that of MOSFETs with the exception of the gate structure which, in DNAFETs, is replaced by a layer of immobilized ssDNA (single-stranded DNA) molecules which act as surface receptors. When complementary DNA strands hybridize to the receptors, the charge distribution near the surface changes, which in turn modulates current transport through the semiconductor transducer. Arrays of DNAFETs can be used for detecting single nucleotide polymorphisms (causing many hereditary diseases) and for DNA sequencing. Their main advantage compared to optical detection methods in common use today is that they do not require labeling of molecules. Furthermore, they work continuously and (near) real-time. DNAFETs are highly selective since only specific binding modulates charge transport. Li Z, Chen Y, Li X, ...

TY - JOUR. T1 - Boost up mobility of solution-processed metal oxide thin-film transistors via confining structure on electron pathways. AU - Rim, You Seung. AU - Chen, Huajun. AU - Kou, Xiaolu. AU - Duan, Hsin Sheng. AU - Zhou, Huanping. AU - Cai, Min. AU - Kim, Hyun Jae. AU - Yang, Yang. PY - 2014. Y1 - 2014. N2 - Novel structure-engineered amorphous oxide semiconductor thin-film transistors using a solution process to overcome the trade-off between high mobility and other parameters (i.e., on/off ratio, sub-threshold voltage swing, threshold voltage, and so on) are proposed. High performance confining structure-engineered AOS TFTs are successfully demonstrated, which utilize a specially designed layer with ultra-high density and high electron mobility.. AB - Novel structure-engineered amorphous oxide semiconductor thin-film transistors using a solution process to overcome the trade-off between high mobility and other parameters (i.e., on/off ratio, sub-threshold voltage swing, threshold ...

0026] FIG. 2 illustrates a block perspective diagram of a fin field effect transistor 200 according to various embodiments. The transistor 200 has a body, also referred to as a fin 210, and is referred to as a single fin transistor. The fin 210 is formed of a semiconductor material and may be formed on an insulating surface 215 over a substrate 220. The insulating surface 215 may be an oxide such as a buried oxide and the substrate 220 may be silicon or another semiconductor material. A gate dielectric 230 is formed over the top and on the sides of the fin 210. A gate electrode 235 is formed over the top and on the sides of the gate dielectric 230 and may include a metal layer. Source 240 and drain 245 regions may be formed in the fin 210 on either side of the gate electrode 235, and may be laterally expanded to be significantly larger than the fin 210 under the gate electrode 235 according to various embodiments. A channel region 246 may be located in the fin 210 between the source region 240 ...

The field of organic electronics emerged in the 1970s with the discovery of conducting polymers. With the introduction of plastics as conductors and semiconductors came many new possibilities both in production and function of electronic devices. Polymers can often be processed from solution and their softness provides both the possibility of working on flexible substrates, and various advantages in interfacing with other soft materials, e.g. biological samples and specimens. Conducting polymers readily partake in chemical and electrochemical reactions, providing an opportunity to develop new electrochemicallydriven devices, but also posing new problems for device engineers.. The work of this thesis has focused on organic electronic devices in which aqueous electrolytes are an active component, but still operating in conditions where it is desirable to avoid electrochemical reactions. Interfacing with aqueous electrolytes occurs in a wide variety of settings, but we have specifically had ...

Chlorinated solvents exhibit excellent solubility characteristics for common conjugated molecules and superior physical properties such as adequate viscosity, surface tension and high boiling point, so they are the preferred processing solvent option for realizing high-performance organic devices by cost-effective

The coming age of wearable, highly flexible and transparent electronic devices will rely on essentially invisible electronic and optoelectronic circuits. In order to have close to invisible circuitry, one must have optically transparent thin-film transistors. In order to have flexibility, one needs bendable substrates. Researchers have now now fabricated transistors on specially designed nanopaper. They show that flexible organic field-effect transistors (OFETs) with high transparency and excellent mechanical properties can be fabricated on tailored nanopapers.

In accordance with the present invention, a monolithically integrated structure combines a field effect transistor and a Schottky structure in an active area of a semiconductor substrate. The field effect transistor includes a first trench extending into the substrate and substantially filled by conductive material forming a gate electrode of the field effect transistor. A pair of doped source regions are positioned adjacent to and on opposite sides of the trench and inside a doped body region. The Schottky structure includes a pair of adjacent trenches extending into the substrate. Each of the pair of adjacent trenches is substantially filled by a conductive material which is separated from trench side-walls by a thin layer of dielectric. The Schottky structure consumes 2.5% to 5.0% of the active area, and the field effect transistor consumes the remaining portion of the active area.

Atomically thin molybdenum disulfide (MoS2) is a promising semiconductor material for integrated flexible electronics due to its excellent mechanical, optical and electronic properties. However, the fabrication of large-scale MoS2-based flexible integrated circuits with high device density and performance remains a challenge. Here, we report the fabrication of transparent MoS2-based transistors and logic circuits on flexible substrates using four-inch wafer-scale MoS2 monolayers. Our approach uses a modified chemical vapour deposition process to grow wafer-scale monolayers with large grain sizes and gold/titanium/gold electrodes to create a contact resistance as low as 2.9 kΩ μm−1. The field-effect transistors are fabricated with a high device density (1,518 transistors per cm2) and yield (97%), and exhibit high on/off ratios (1010), current densities (~35 μA μm−1), mobilities (~55 cm2 V−1 s−1) and flexibility. We also use the approach to create various flexible integrated logic circuits:

A display and a driving method for the same capable of constructing clear visual images as described. In the display, a plurality of conductive pads are opposed to a back electrode with a light influencing medium such as a liquid crystal layer. Control signals are supplied to the conductive pads through complimentary transistors comprise a p-channel field effect transistor and an n-channel field effect transistor connected between V DD and V SS lines of a control circuit, which also supplies a bias voltage to the back electrode and gate control signals to the gate terminals of the p-channel field effect transistor and the n-channel field effect transistor. During operation, the bias voltage is inverted in order to invert the polarity of control signal applied across the light influencing medium.

A semiconductor device comprising a semiconductor body having a top surface and a first and second laterally opposite sidewalls as formed on an insulating substrate is claimed. A gate dielectric is formed on the top surface of the semiconductor body and on the first and second laterally opposite sidewalls of the semiconductor body. A gate electrode is then formed on the gate dielectric on the top surface of the semiconductor body and adjacent to the gate dielectric on the first and second laterally opposite sidewalls of the semiconductor body. The gate electrode comprises a metal film formed directly adjacent to the gate dielectric layer. A pair of source and drain regions are then formed in the semiconductor body on opposite sides of the gate electrode.

Using derived equations for the potential description for carbon nanotube field effect transistors (CNT-FETs), basic semiconductor equations for carbon nan

It is demonstrated that soft annealing duration strongly affects the performance of solution-processed amorphous zinc tin oxide thin-film transistors. Prolonged soft annealing times are found to induce two important changes in the device: (i) a decrease in zinc tin oxide film thickness, and (ii) an increase in oxygen vacancy concentration. The devices prepared without soft annealing exhibited inferior transistor performances, in comparison to devices in which the active channel layer (zinc tin oxide) was subjected to soft annealing. The highest saturation field-effect mobility - 5.6 cm2 V-1 s-1 with a drain-to-source on-off current ratio (Ion/Ioff) of 2 × 108 - was achieved in the case of devices with 10-min soft-annealed zinc tin oxide thin films as the channel layer. The findings of this work identify soft annealing as a critical parameter for the processing of chemically derived thin-film transistors, and it correlates device performance to the changes in material structure induced by soft ...

A method for using an inverter with a pair of complementary junction field effect transistors (CJFET) with a small linewidth is provided. The method includes having an input capacitance for said CJFET inverter to be less than the corresponding input capacitance of a CMOS inverter of similar linewidth. The CJFET operates at a power supply with a lesser value than the voltage drop across a forward-biased diode having a reduced switching power as compared to said CMOS inverter and having a propagation delay for said CJFET inverter that is at least comparable to the corresponding delay of said CMOS inverter.

https://doi.org/10.1002/admi.201900719. Flexible pressure sensors are increasingly impacting a wide variety of novel applications such as wearable health care sensors, in vivo monitoring, and even artificial skin. As a fundamental device component, organic field‐effect transistors (OFETs) are of great interest due to their inherent advantages related to low‐cost solution fabrication processes and compatibility with plastic substrates. During OFET fabrication, it is almost impossible to avoid the water traces in the organic semiconductor (OSC) active layer, especially when ambient solution processing techniques are employed. Water exhibits a strong influence on the electrical performance in OFETs, such as hysteresis and nonideal transfer characteristics. Here, it is shown that the presence of water in OSCs also results in pressure‐sensitive devices caused by the modification of the water dipole alignment. This exciting phenomenon is exploited in a novel OFET, namely, hydrogel‐based ...

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Figure 1 was produced by X. Pita, a scientific illustrator at KAUST. We thank all of the members of the KAUST Rapid Research Response Team (R3T) for COVID-19, especially S. Hamdan, for contributions in this study. We thank S. Mfarrej and A. K. Subudhi for providing access to and assisting with the experiments in the Biosafety Level 2+ experimental room at KAUST. We thank the KAUST Health team (operated by Dr. Soliman Fakeeh Hospital, Jeddah), including D. Buttigieg and M. Habib, for providing clinical samples. We thank staff at the King Faisal Specialist Hospital and Research Center (Riyadh), particularly A. Alzahrani, M. Alsanea and F. Alhadeq, for help with organizing and hosting some of the clinical studies. We thank the KAUST nanofabrication core laboratory team, D. Rosas Villalva and U. Buttner for help with device fabrication and integration. This work was initiated thanks to the KAUST Impact Acceleration Fund (IAF) program. The research reported in this publication was supported by ...

TY - JOUR. T1 - Crystallinity-controlled naphthalene- Alt -Diketopyrrolopyrrole copolymers for high-performance ambipolar field effect transistors. AU - Lee, Hyo Sang. AU - Lee, Joong Suk. AU - Cho, Sanghyeok. AU - Kim, Hyunjung. AU - Kwak, Kyung Won. AU - Yoon, Youngwoon. AU - Son, Seon Kyoung. AU - Kim, Honggon. AU - Ko, Min Jae. AU - Lee, Doh Kwon. AU - Kim, Jin Young. AU - Park, Sungnam. AU - Choi, Dong Hoon. AU - Oh, Se Young. AU - Cho, Jeong Ho. AU - Kim, Bongsoo. PY - 2012/12/20. Y1 - 2012/12/20. N2 - We report high-performance of ambipolar organic field-effect transistors (FETs) based on the low band gap copolymers of pDPPT2NAP-HD and pDPPT2NAP-OD. The polymers are composed of electron-rich 2,6-di(thienyl)naphthalene (T2NAP) and electron-deficient diketopyrrolopyrrole (DPP) units with branched alkyl chains of 2-hexyldecyl (HD) or 2-octyldodecyl (OD). The polymers were polymerized via Suzuki coupling, yielding optical band gaps of ∼1.4 eV. In the transistor performance test, we observed ...

The present invention is generally directed to various methods of controlling gate electrode doping, and various systems for accomplishing same. In one illustrative embodiment, the method disclosed herein comprises performing at least one process operation to form a doped layer of gate electrode material, measuring a sheet resistance of the doped layer of gate electrode material and adjusting at least one parameter of at least one process if the measured sheet resistance does not fall within acceptable limits. In one embodiment, the system is comprised of a process tool for performing at least one process operation to form a doped layer of gate electrode material, a metrology tool for measuring a sheet resistance of the doped layer of gate electrode material and a controller for adjusting at least one parameter of at least one process operation if the measured sheet resistance of the doped layer of gate electrode material does not fall within acceptable limits.

Bipolar transistors are so named because they conduct by using both majority and minority carriers. The bipolar junction transistor, the first type of transistor to be mass-produced, is a combination of two junction diodes, and is formed of either a thin layer of p-type semiconductor sandwiched between two n-type semiconductors (an n-p-n transistor), or a thin layer of n-type semiconductor sandwiched between two p-type semiconductors (a p-n-p transistor). This construction produces two p-n junctions: a base-emitter junction and a base-collector junction, separated by a thin region of semiconductor known as the base region (two junction diodes wired together without sharing an intervening semiconducting region will not make a transistor).. The BJT has three terminals, corresponding to the three layers of semiconductor - an emitter, a base, and a collector. It is useful in amplifiers because the currents at the emitter and collector are controllable by a relatively small base current.[33] In an ...

Highly extended polyacenes such as pentacene and naphthacene have been essential organic semiconductors for high-performance organic field-effect transistors (OFETs). Among the range of thienoacene-based organic semiconductors, materials with an internal thieno[3,2-b]thiophene substructure, such as DNTT and BTBT, have shown the best p-channel organic semiconductors for OFET applications in terms of high mobility, air stability, and good reproducibility.

Highly extended polyacenes such as pentacene and naphthacene have been essential organic semiconductors for high-performance organic field-effect transistors (OFETs). Among the range of thienoacene-based organic semiconductors, materials with an internal thieno[3,2-b]thiophene substructure, such as DNTT and BTBT, have shown the best p-channel organic semiconductors for OFET applications in terms of high mobility, air stability, and good reproducibility.

Looking for online definition of Bipolar transistor in the Medical Dictionary? Bipolar transistor explanation free. What is Bipolar transistor? Meaning of Bipolar transistor medical term. What does Bipolar transistor mean?

One-dimensional materials exhibit striking, unique phenomena that are not found in two or three dimensions. For the last twenty years, single walled carbon nanotubes (CNTs) have served as the prototypical experimental one-dimensional system. In this thesis, I investigate experimental data and theoretical models of spatially and electrically isolated single-walled CNTs field-effect transistors.; Carbon nanotubes are grown using chemical vapor deposition, which relies on small percentage of as-grown CNTs landing across pre-defined Pt electrodes that define the transistor. A Landauer model is developed, which explains the gate and bias voltage dependence of the electrical transport in these devices, and which serves as the basis for much of the analysis of the experimental electrical transport and Raman data.; Raman spectra are collected from CNTs under high applied bias voltages. When heated with an electrical current, the Raman spectra of CNTs downshift, and this shift can be used as an in-situ ...

TY - JOUR. T1 - Performance enhancement of organic thin-film transistors with improved copper phthalocyanine crystallization by inserting ultrathin pentacene buffer. AU - Huang, Wei. AU - Yu, Junsheng. AU - Yu, Xinge. AU - Li, Yu. AU - Zeng, Hongjuan. N1 - Funding Information: This work was supported by the National Science Foundation of China (NSFC) (Grant Nos. 61177032 and 61071026 ), the Foundation for Innovative Research Groups of the NSFC (Grant No. 61021061 ), the Fundamental Research Funds for the Central Universities (Grant No. ZYGX2010Z004 ), SRF for ROCS, SEM (Grant No. GGRYJJ08-05 ), and the Doctoral Fund of Education Ministry of China (Grant No. 20090185110020 ).. PY - 2012/8/31. Y1 - 2012/8/31. N2 - Organic thin-film transistors (OTFTs) with high crystallization copper phthalocyanine (CuPc) active layers were fabricated by inserting an ultrathin pentacene buffer layer between the dielectric and CuPc layers. Comparing with the OTFTs without a pentacene buffer layer, the charge ...

NEC developed the technology to build high-performance carbon nanotube transistors using the ink-jet printing technology. The technology makes it possible to create more elaborate circuits than the conventional printing technology for higher performance of a transistor. A carbon nanotube transistor is applicable to a thin and bendable display should it be printed on a plastic substrate. The company improved the refinement method of nanotube and increased the purity of nanotube contained in the ink. Besides, it devised the composition of the ink to prevent the exhaust nozzle of a printer from getting clogged even if high concentration ink is used. In the experiment, the technology successfully created a circuit with lines of about 70 micrometers wide. The width of a line that the current technology can print is about several hundreds of micrometers. NEC plans to put the newly-developed technology into practical use in five years. ...

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A process of fabricating an improved transistor on a polycrystalline silicon layer, wherein N and P type dopants, in approximate equal concentrations, are introduced into the layer, and the layer heated. The resultant modified polycrystalline silicon layer inhibits the migration of dopants, used to form the active regions of the device, during subsequent heating steps. An improved field effect transistor having a source region, a drain region, and channel region in a polycrystalline silicon layer, the improvement being that the polycrystalline silicon layer has approximately equal concentrations of N and P type dopants embodied therein, which serves to restrain movement of P/N junctions.

Organic semiconductors (OSCs) are of fundamental and technological interest, owing to their properties and functions in a range of optoelectronic devices, including organic light-emitting diodes, organic photovoltaics and organic field-effect transistors, as well as emerging technologies, such as bioelectronic devices. The solid-state organization of the subunits in OSC materials, whether molecular or polymeric, determines the properties relevant to device performance. Nevertheless, the systematic relationships between composition, structure and processing conditions are rarely fully understood, owing to the complexity of the organic architectures and the resulting solid-state structures. Characterization over different length scales and timescales is essential, especially for semi-ordered or amorphous regions, for which solid-state NMR (ssNMR) spectroscopy yields nanoscale insight that can be correlated with scattering measurements and macroscopic property analyses. In this Review, we assess recent

A strategy to minimize the sensing voltage drift error in a transistor biosensor with a nanoscale sensing gate Hyun Woo Son,1,* Minhong Jeun,1,* Jaewon Choi,1,2 Kwan Hyi Lee1,2 1Center for Biomaterials, Biomedical Research Institute, Korea Institute of Science and Technology, Seoul, 2Department of Biomedical Engineering, Korea University of Science and Technology, Daejeon, Republic of Korea *These authors contributed equally to this work Abstract: An ion-sensitive field-effect transistor (ISFET) biosensor is thought to be the center of the next era of health diagnosis. However, questions are raised about its functions and reliability in liquid samples. Consequently, real-life clinical applications are few in number. In this study, we report a strategy to minimize the sensing signal drift error during bioanalyte detection in an ISFET biosensor. A nanoscale SnO2 thin film is used as a gate oxide layer (GOL), and the surface of the GOL is chemically modified for improving bioanalyte-specific binding and

But as we eventually discovered, the III-V approach has some fundamental physical limitations. Its also likely to be too expensive and difficult to integrate with existing silicon technology. So a few years ago, my team at Purdue University, in West Lafayette, Ind., began experimenting with a different kind of device: a transistor with a channel made of germanium. Since then, weve demonstrated the first complementary-metal-oxide-semiconductor (CMOS) circuits-the kind of logic inside todays computers-made with germanium grown on ordinary silicon wafers. We have also constructed a range of different transistor architectures using the material. These include nanowire devices, which may be next in line when the present state-of-the-art transistor design, known as the FinFET, cant be miniaturized any longer. Full article: http://spectrum.ieee.org/semiconductors/materials/germani... ...

A method for making a semiconductor device may include forming at least one metal oxide semiconductor field-effect transistor (MOSFET) on a semiconductor substrate. The MOSFET may include spaced-apart source and drain regions, a channel between the source and drain regions, and a gate overlying the channel defining an interface therewith. The gate may include a gate dielectric overlying the channel and a gate electrode overlying the gate dielectric. The channel may include a plurality of stacked base semiconductor monolayers, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor monolayers. The at least one non-semiconductor monolayer may be positioned at depth of about 4-100 monolayers relative to the interface between the channel and the gate dielectric.

This is a custom dual germanium transistor version of our Fuzz Bender Mk I.V. It uses two switchable pairs of hand-selected NOS germanium transistors for more versatility and tonal variation. Each toggle switch allows to have either a Mullard OC75 in the up position, or a Mullard OC84 in the down position. This combination of transistors as well as the extra external bias pot make the pedal exceptionally versatile with a wide tone palette. Also included is a toggle switch on the back for disconnecting the internal battery without having to unplug the pedal. The pedal is housed in a premium GØRVA enclosure in Chameleon finish.. Please note: these custom pedals are not available regularly, and are only built when components are available and when time allows. Please contact us for further information on availability.. Specifications:. ...

Journal of Nanomaterials is a peer-reviewed, Open Access journal that aims to bring science and applications together on nanoscale and nanostructured materials with emphasis on synthesis, processing, characterization, and applications of materials containing true nanosize dimensions or nanostructures that enable novel/enhanced properties or functions. It is directed at both academic researchers and practicing engineers. Journal of Nanomaterials will highlight the continued growth and new challenges in nanomaterials science, engineering, and nanotechnology, both for application development and for basic research. All papers should emphasize original results relating to experimental, theoretical, computational, and/or applications of nanomaterials ranging from hard (inorganic) materials, through soft (polymeric and biological) materials, to hybrid materials or nanocomposites.

The drain bias induced threshold voltage variation in short channel (L=0.4 μm) polycrystalline silicon thin-film transistors (TFTs), with different gate oxide thicknesses, is investigated with combined experimental measurements and numerical simulations. Drain-induced barrier lowering (DIBL) and floating body effects (FBEs), triggered by impact ionization, are the main causes of such variations. However, the effects are counterbalancing, with a reducing oxide thickness reducing DIBL, while, at the same time, increasing the relative impact of the FBE. Hence, drain bias induced threshold voltage changes, when normalized by oxide thickness, are independent of the gate oxide thickness in these TFTs ...

In 1947, the transistor was invented by a team of Nobel laureates. John Bardeen, Walter Brattain and William Shockley of Bell Laboratories. Invention of transistor was a significant landmark of modern electronics. This invention revolutionized electronic industry due to its feature such as light weight, less power, reliability, low cost etc. Invention of transistor reduced the electronic devices. Demonstration of first colour television happened in 1950 and unipolar field effect transistor was invented by shockley in 1952 ...

Gate modulation in carbon nanotube field effect transistors-based NH3 gas sensors: Single-walled carbon nanotube field effect transistors (CNTFETs) are used as

Carbon nanotubes can be used to make very small electronic devices, but they are difficult to handle. University of Groningen scientists, together with colleagues from the University of Wuppertal and IBM Zurich, have developed a method to select semiconducting nanotubes from a solution and make them self-assemble on a circuit of gold electrodes. The results were published in the journal Advanced Materials (On-chip chemical self-assembly of semiconducting Single-Walled Carbon Nanotubes (SWNTs): towards robust and scale invariant SWNTs transistors).. The results look deceptively simple: a self-assembled transistor with nearly 100 percent purity and very high electron mobility. But it took ten years to get there. University of Groningen Professor of Photophysics and Optoelectronics Maria Antonietta Loi designed polymers which wrap themselves around specific carbon nanotubes in a solution of mixed tubes. Thiol side chains on the polymer bind the tubes to the gold electrodes, creating the resultant ...

Saroj Dash also added We have been working on graphene spintronics for a number of years and we joined the Graphene Flagship because our goals are aligned with that of the Flagship spintronics work package - to investigate room temperature graphene spintronics devices, joining together theoretical and experiment research. The collaborative nature of the Graphene Flagship community, with its focus on face to face meetings has lead to many fruitful discussions within our spintronics field. This collaborative approach also led to a great relationship with our commercial partner Graphenea, who has worked with us to provide the graphene sample we needed ...

The morphology of the semiconductor film is highly dependent on the chemical and physical nature of the dielectric surface. Patterning of dielectric surface can lead to selective patterning of the organic semiconductor in desired locations, which is important to reduce cross talk between devices. With proper control of the dielectric surface, arrays of organic semiconductor single crystals can be patterned over a large area for high performance transistors.3. Great progress has been made in the development of organic semiconductor materials. The initial demonstration of transistor activity in these films was with a narrow group of p-channel thiophene oligomers and polymers. The reported mobilities were on the order of 0.01-0.1 cm2/Vs.4,5 During the last few years, a much broader selection of molecular solids and polymers has been developed, all with mobilities above 0.1 cm2/Vs and achievable on/off ratios greater than 105.1 The chemical structures of some representative materials are shown in ...

Figure 1. Top, 2H-MoTe2 Bottom, 1T-MoTe2. Molybdenum ditelluride (MoTe2) is a crystalline compound that, if pure enough, can be used as a transistor. Its molecular structure is a sandwich made up of one molybdenum atom for every two tellurium atoms. It was first made in the 1960s via several different fabrication methods, but had never been made in a pure enough form to be suitable for electronics. Not only did the IBS-led team succeed in making MoTe2 in pure form, they were also able to make two types of it - the semiconducting variety 2H (hexagonal) and the metallic variety monoclinic 1T (octahedral) of MoTe2 - which are both stable at room temperature. Making MoTe2 in a pure form was very difficult and was seen by some as a black sheep of the transition-metal dichalcogenides (TMD) family and hence ignored. TMDs are molecules that can be made very thin (just several atomic layers thick) and have an energy bandgap that makes them ideal for making electrical components, especially transistors. ...

Evidence of the adsorption of sodium dodecyl sulfate (SDS) residuals on single-walled carbon nanotubes (SWNTs) is shown using x-ray photoelectron spectroscopy. The adsorption of SDS on semiconducting SWNTs (s-SWNTs) is believed to result in deposition and alignment of s-SWNTs between predefined electrode pairs using ac dielectrophoresis. However, the presence of SDS on SWNTs degrades electrical properties of the fabricated devices. Attempts at surface cleaning, aimed at removal of the SDS residuals and formation of an improved contact between the SWNTs and the metal, are described.. ...

Power electronics is expanding as we automate and electrify our households and step into mainstream electric vehicles. Recently, GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) have been increasing in popularity for high voltage power electronics applications because they combine high electron mobility with low gate leakage, increasing efficiency. This comes with the tradeoff of increased reliability concerns to be addressed before the widespread commercialization of GaN MIS-HEMTs. This thesis investigates one failure mechanism found in prototype industrial GaN MIS-HEMTs: time dependent dielectric breakdown (TDDB) of the gate insulator. TDDB occurs when a high electric field causes an accumulation of defects in the gate dielectric, forming a conducting path and rendering the device unusable. This is of major concern in GaN MIS-HEMTs because of their role as switches in high voltage circuits. In this work, we develop testing methodologies to address ...

Publikations-Datenbank der Fraunhofer Wissenschaftler und Institute: Aufsätze, Studien, Forschungsberichte, Konferenzbeiträge, Tagungsbände, Patente und Gebrauchsmuster

Graphene Oxide (GO) is analogous to graphene with oxygen moieties. It offers several advantages over graphene, such as a tunable band-gap, facile synthesis and no use of metal catalysts. Due to the monolayer configuration of GO, all of its carbon atoms are readily exposed to the atmosphere and are sensitive to surface perturbations, thus making GO very suitable for liquid-gated field effect transistor (FET) type sensing applications. However, there are two main limitations preventing GO usage in practical FET sensors. It displays (1) variable coverage between fabricated chips and (2) high electrical resistance. In this paper, we overcome these two limitations by using a facile atmospheric-pressure ethanol Chemical Vapor Deposition treatment on top of pre-coated GO (ECVDGO) which decreases the electrical resistivity from 1.99 × 106 Ω square−1 to 4.68 × 103 Ω square−1, and resistivity variation from 1.60 × 106 to 7.72 × 102 Ω square−1; whilst enlarging the surface GO coverage up to ...

The present invention provides a thin film transistor, wherein the semiconductor channel region is patterned. Gate electrodes 102, gate insulating film 103, source electrodes 104, and drain electrodes 105 are formed on a glass substrate 101. A patterned insulating film is formed thereon, and a part of the film in the region 110 on the gate electrode is removed. An organic semiconductor film is formed thereon by vapor deposition. The organic semiconductor film 107 in the region 110, where the patterned insulating film is removed, becomes a channel region, and is separated from the organic semiconductor film 108 on the patterned insulating film 106. Therefore, the organic semiconductor channel region is patterned to have the same size as the gate electrode. In accordance with the present invention, a thin film transistor, wherein the semiconductor region is patterned precisely, becomes available.

Delays in obtaining medical results from laboratory testing facilities is a well recognised bottleneck in the medical community. Employing methods that utilise real time electronic sensing could recover this potentially life-saving lost time. Such sensors have many applications within the medical field including detection of infectious diseases, biological or chemical weaponry, glucose sensors for diabetic patients, and many more. However we are approaching a time in human history when antibiotics may no longer be an effective way to treat bacterial infections, and as such we have chosen to pursue a bio-sensing device for antibiotic resistant enzymes. Due to the rise of antibiotic resistance in so called super-bugs compounded with the well documented medical bottleneck that results in long waiting times for test results, there is a call for real time bio-sensing devices that can detect antibiotic resistance. Presented in this thesis is work towards a real time bio-sensing device designed to ...

An integrated circuit device includes a plurality of dynamic array sections, each of which includes three or more linear conductive segments formed within its gate electrode level in a parallel manner to extend lengthwise in a first direction. An adjoining pair of dynamic array sections are positioned to have co-located portions of outer peripheral boundary segments extending in the first direction. At least one of the linear conductive segments within the gate electrode level of a given dynamic array section is a non-gate linear conductive segment that does not form a gate electrode of a transistor. The non-gate linear conductive segment of either of the adjoining pair of dynamic array sections spans the co-located portion of outer peripheral boundary segment toward the other of the adjoining pair of dynamic array sections, and is contained within gate electrode level manufacturing assurance halo portions of the adjoining pair of dynamic array

Its been 70 years since the fundamental building block of electronics was created, and it has been getting smaller, and better since then. The invention that won the Nobel prize for John Bardeen, Walter Brattain, and William Shockley in 1956 revolutionized electronics and made it into the IEEE milestone list. Before 1947 computers used vacuum tubes, which could be several inches long, consumed massive amounts of power, and needed to be regularly replaced. Nowadays, billions of transistors can fit in the area of a single vacuum tube, can last for many years and are a lot more efficient.. What is a transistor? For computing, basic binary logic operations are needed in order to perform calculations, so the objective of both vacuum tubes and transistors was to toggle the device between on and off position (1 or 0). A transistor is made from semiconductor material (usually silicon or germanium) capable of carrying current and regulating its flow. The semiconductor is doped which results in a material ...

Scanning spreading resistance microscopy (SSRM) is a technique with a unique combination of high spatial resolution (1 to 3nm) and high sensitivity. SSRM is based on atomic force microscopy and was invented by W. Vandervorst et al. at imec in 1994. During the last decade, it has evolved into the method of choice for carrier profiling in planar MOS transistors. With this work, imec applied HV-SSRM to Si-nanowire-based tunnel-FETs, proving its validity to study carrier distribution in semiconductor nanowires. It also showed that HV-SSRM is capable of revealing physical phenomena which are present in small, 3D structures only, and which cannot be predicted by blanket experiments. Such information is essential for the process development of future nanowire-based devices ...

Freescale Semiconductor says the company has developed the industrys first device that combines the high performance of gallium arsenide (GaAs) semiconductor compounds with the advantages of traditional metal oxide semiconductor field effect transistor (MOSFET) technology and its scaling laws.. This enables the development of new classes of power amplifier and low-power, ultra-fast semiconductors that significantly shrink the size and boost the performance of end devices, the company said. The performance improvements could fundamentally change analog-to-digital conversion technology, potentially making such conversions virtually instantaneous.. Freescales GaAs MOSFET technology holds the promise of having a disruptive impact in the industry, said Asif Anwar, GaAs Services director for industry analyst firm Strategy Analytics. It offers potential leaps in device performance built upon a foundation of mature manufacturing capabilities.. Silicon-based MOSFET technology forms the bedrock of ...

However, Infineon claimed it was the first company to use carbon nanotubes to produce a power transistor, a type of chip used as power switches in applications such as light-emitting diodes and small electric motors.. Infineons prototype power transistor, which consists of 300 carbon nanotubes arranged in parallel, is capable of switching LEDs and electric motors at a voltage of 2.5 volts. Carbon nanotubes had not previously been believed capable of withstanding the high voltages used in power transistors.. In the future, carbon nanotube technology could simplify the production of power transistors and produce chips that are smaller, cheaper, faster and produce less heat than existing technology allows, Infineon said.. The researchers said they had no idea how long it will take to bring the technology into commercial production on a large scale.. Sumner Lemon writes for IDG News Service ...

Abstract: Vanadium dioxide (VO2) is well known for its metal-insulator transition (MIT) at 341 K.Normally,the VO2 presents a metallic rutile (R) phase above the Tc,but an insulator (monoclinic,M) phase below the Tc.Besides the thermally driven mode,the phase transition can also be triggered electrically,which is common in electron devices like field effect transistors and actuators.Due to the electron correlation,the Mott transition associated with electronelectron interaction as well as the Peierls transition involving electron-lattice interaction are both believed to drive the transition of VO2,although the actual MIT mechanism is still under debate in condensed matter physics.The Coulomb screening of the electron hopping can be broken by injecting enough carriers.However,the issue is more complicated in the electrically-triggered MIT of VO2 due to the Joule heat of current and the carrier injection of field effect.In this work, we study the electrically induced MIT in VO2 nanowires by in-situ ...

(PhysOrg.com) -- A new generation of ultrasmall transistors and more powerful computer chips using tiny structures called semiconducting nanowires are closer to reality after a key discovery by researchers at IBM, Purdue ...

Carbon nanotubes (CNTs) are remarkable solid state nanomaterials due to their unique properties such as high surface area, hollow cavities, and excellent mechanical and electrical properties. Interfacing carbon nanotubes with biological materials could enable significant advances in biomedical applications such as disease diagnosis and treatment. In addition, the bioconjugated nanotubes combine with the sensitive nanotube-based electronic devices would enable sensitive biosensors toward medical diagnostics. This paper presents electronic sensing of antibodies that are specific to HER2 surface receptors in cancer cells with nanotube field effect transistor devices. This paper also presents antibody functionalization of carbon nanotubes and its potential applications for breast cancer diagnostics.