An integrated circuit includes a conductive structure (66) is formed with a top layer of silicon nitride (62) and silicon nitride (70) sidewalls on a semiconductor substrate. The layer of silicon nitride (70) covering the sidewalls of the conductive structure (66) intersect with the layer of silicon nitride on top of the conductive structure with a relatively square shoulder. A subsequently deposited conductor makes contact with the surface of the semiconductor substrate (56) without shorting to the conductive structure (66) on the semiconductor substrate.
We report on strong UV third-harmonic generation from silicon nitride films and resonant waveguide gratings. We determine the absolute value of third-order susceptibility of silicon nitride at wavelength of 1064 nm to be χ(3) (-3ω,ω,ω,ω) = (2.8 ± 0.6) × 10−20 m2/V2, which is two orders of magnitude larger than that of fused silica. The third-harmonic generation is further enhanced by a factor of 2000 by fabricating a resonant waveguide grating onto a silicon nitride film. Our results extend the operating range of CMOS-compatible nonlinear materials to the UV spectral regime.. ©2013 Optical Society of America. Full Article , PDF Article ...
We introduce and present experimental evaluations of loss and nonlinear optical response in a waveguide and an optical resonator, both implemented with a silicon nitride/silicon dioxide material platform prepared by plasma-enhanced chemical vapor deposition with dual frequency reactors that significantly reduce the stress and the consequent loss of the devices. We measure a relatively small loss of ~4dB/cm in the waveguides. The fabricated ring resonators in add-drop and all-pass arrangements demonstrate quality factors of Q=12,900 and 35,600. The resonators are used to measure both the thermal and ultrafast Kerr nonlinearities. The measured thermal nonlinearity is larger than expected, which is attributed to slower heat dissipation in the plasma-deposited silicon dioxide film. The n 2 for silicon nitride that is unknown in the literature is measured, for the first time, as 2.4×10-15cm2/W, which is 10 times larger than that for silicon dioxide.. ©2008 Optical Society of America. Full Article , ...
Sub-wavelength structure (SWS) on anti-reflection coating instead of semiconductor surface can improve the efficiency of silicon solar cell has been studied both numerically and experimentally recently. The shape of the SWS may be somewhat variable and, therefore, a multilayer rigorous coupled-wave approach is advanced to investigate the reflection properties of silicon nitride (Si3N4) SWS for four different shaped SWS, assuming a hexagonal nipple lattice. In this study, we investigate the spectral reflectivity of silicon nitride (Si3N4) sub-wavelength structures (SWS) with different shapes. We vary the height of etched part
This paper addresses the structural characteristics and phase transformation behavior of plain electroless Ni-P and Ni-P-Si3N4 composite coatings. Composite coatings were prepared using a low phosphorus electroless nickel bath containing 1 and 5 g/L submicron silicon nitride particles at pH 6.5 and temperature 85 +/- 2 degrees C. Deposition rate was around 6 mu m/h for both plain and composite coatings. The amount of silicon nitride particles codeposited in the Ni-P matrix is 3.5 wt.% (N1) and 4.5 wt.% (N2) with the addition of I and 5 g/L particles in the bath. Deposit surface composition analysis carried out by energy-dispersive analysis of X-ray (EDX) results shows that plain Ni-P and Ni-P-Si3N4 deposits are having around 3.5 wt.% phosphorus. The X-ray diffraction (XRD) patterns of Ni-P-Si3N4 coatings are very similar to that of plain electroless Ni-P coating in as-deposited condition. Presence of a single high intensity peak at 44.8 degrees 20 which corresponds to Ni(111) peak is present in ...
Silicon-rich silicon nitride is employed as a protective layer in a self-aligning etch. A thin layer of silicon-rich silicon nitride is deposited conformably over raised structures on a substrate. An etchable layer is then deposited, filling a space between the raised structures and providing a horizontal top surface. A mask layer is then formed on the etchable layer and patterned to expose an area of the etchable layer over the space between the raised structures. The etchable layer is then etched with an etchant selective to silicon nitride to remove the etchable layer from between the raised structures. Then the space between the raised structures is filled with a fill material, forming a self-aligned structure comprised of said fill material and self-aligned to the raised structures. The thin layer of silicon-rich silicon nitride resists the etch of the etchable layer better than the typical stoichiometric silicon nitride, providing increased selectivity, improving the reliability of the self
UNSPECIFIED (1994) CRYSTALLISATION OF GRAIN BOUNDARY PHASES IN SILICON NITRIDE AND SIALON CERAMICS. In: NATO Advanced Research Workshop on Tailoring of High Temperature Properties of Si3N4 Ceramics, SCHLOSS RINGBERG, MUNICH, GERMANY, OCT 06-09, 1993. Published in: TAILORING OF MECHANICAL PROPERTIES OF SI3N4 CERAMICS, 276 pp. 217-231 ...
Manufacturing method of liquid crystal display device - The present invention provides a liquid crystal display device having a large holding capacitance in the inside of a pixel. A liquid crystal display device includes a first substrate, a second substrate arranged to face the first substrate in an opposed manner, and liquid crystal sandwiched between the first substrate and the second substrate. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode thereof connected to the video signal line and a second electrode thereof connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film formed above the first silicon nitride film, a capacitance electrode formed above the organic insulation film, and a second silicon nitride film formed above the capacitance electrode and below the pixel electrode. The second silicon nitride film is a film which is formed at a temperature ...
Martinez, FL, Ruiz-Merino, R, del Prado, A, San Andres, E, Martil, I, Gonzalez-Diaz, G, Jeynes, C, Barradas, NP, Wang, L and Reehal, HS (2004) Bonding structure and hydrogen content in silicon nitride thin films deposited by the electron cyclotron resonance plasma method In: 8th European Vacuum Congress (EVC-8)/2nd Annual Conference of the German-Vacuum-Society (DVG), 2003-06-23 - 2003-06-26, Berlin, GERMANY. Full text not available from this repository ...
High-strength, wear-resistant 3M™ Silicon Nitride Components and Materials provide a lightweight solution for the most demanding industrial applications.
The fabrication of a MEMS device such as an interferometric modulator is improved by employing an etch stop layer between a sacrificial layer and a an electrode. The etch stop may reduce undesirable over-etching of the sacrificial layer and the electrode. The etch stop layer may also serve as a barrier layer, buffer layer, and or template layer. The etch stop layer may include silicon-rich silicon nitride.
Autor: Kaskel, S. et al.; Genre: Zeitschriftenartikel; Im Druck veröffentlicht: 2005; Titel: Synthesis, Characterization, and Catalytic Properties of High-Surface-Area Aluminum Silicon Nitride Based Materials
0036]Next, a silicon oxide film having a thickness of 10 nm and a silicon nitride film having a thickness of 50 nm are formed on an entire surface of the semiconductor substrate 1 by CVD. Next, the silicon oxide film and the silicon nitride film are anisotropically etched by reactive ion etching (RIE) to form sidewall insulating films 5 made of the silicon oxide film and sidewall insulating films 6 made of the silicon nitride film on sidewall portions of the gate electrode 4. Next, using the gate electrode 4 and the sidewall insulating films 5 and 6 as a mask, a dopant impurity is introduced into regions of the semiconductor substrate 1 located on opposite sides of the gate electrode 4 and the sidewall insulating films 5 and 6 by ion implantation. Here, when an NMOS transistor is to be formed, arsenic is implanted as an n-type dopant impurity at an accelerating voltage of 20 keV and a dose of 5×1015 cm-2, for example. When a PMOS transistor is to be formed, boron is implanted as a p-type dopant ...
In the manufacture of a semiconductor memory device having a capacitor formed by arranging a dielectric film including two layers of a silicon oxide film and a silicon nitride film between two electrode films, a thin dielectric film is formed by forming the silicon nitride film on a silicon conductive film by thermally nitriding said silicon conductive film using NO gas, then laminating a silicon oxide film on said silicon nitride film by a CVD method. The erasing/writing speed of semiconductor memory devices, in particular of flash memories or the like, is improved.
An interconnect structure for integrated circuits incorporates manganese silicate and manganese silicon nitride layers that completely surrounds copper wires in integrated circuits and methods for making the same are provided. The manganese silicate forms a barrier against copper diffusing out of the wires, thereby protecting the insulator from premature breakdown, and protecting transistors from degradation by copper. The manganese silicate and manganese silicon nitride also promote strong adhesion between copper and insulators, thus preserving the mechanical integrity of the devices during manufacture and use. The strong adhesion at the copper-manganese silicate and manganese silicon nitride interfaces also protect against failure by electromigration of the copper during use of the devices. The manganese-containing sheath also protects the copper from corrosion by oxygen or water from its surroundings.
Supplément au Journal de Physique Colloques, Journal de Physique Archives représente une mine dinformations facile à consulter sur la manière dont la physique a été publiée depuis 1872.
SINTX Technologies, Inc. (NASDAQ: SINT) (SINTX or the Company), an original equipment manufacturer (OEM) ceramics company focused on silicon nitride and its applications, today announced positive testing results demonstrating the anti-viral properties of its silicon nitride which
In situ ordering of FePt thin films with face-centered-tetragonal (001) texture on Cr[sub 100-x]Ru[sub x] underlayer at low substrate temperature. Xu, Yingfan; Chen, J. S.; Wang, J. P. // Applied Physics Letters;5/6/2002, Vol. 80 Issue 18, p3325 In situ ordered FePt thin films with face-centered-tetragonal (fct)-(001) texture have been prepared by magnetron sputtering the FePt layer onto the Cr[sub 100-x]Ru[sub x] underlayer at relatively low temperature. The dependence of FePt texture on the Ru content in the Cr underlayer and the... ...
The flagship monthly journal of SPIE, |i|Optical Engineering|/i| (OE) publishes peer-reviewed papers reporting on research and development in all areas of optics, photonics, and imaging science and engineering.
... have rings of bearing steel and rolling elements of bearing grade silicon nitride. Silicon nitride is a ceramic material with low density and high strength, stiffness, toughness and hardness ...
... have rings of bearing steel and rolling elements of bearing grade silicon nitride. Silicon nitride is a ceramic material with low density and high strength, stiffness, toughness and hardness ...
TEMwindows.com - is the online source of innovative sample preparation solutions for the imaging and analysis of nano-scale materials.
The flagship monthly journal of SPIE, |i|Optical Engineering|/i| (OE) publishes peer-reviewed papers reporting on research and development in all areas of optics, photonics, and imaging science and engineering.
Nano-particle prepared from sol-gel method 1. TiO2 Titanium tetra-iso-propoxide diethanolamine Polyethylene glycol SiO2 substrate Solution I with Polyethylene glycol – A free PowerPoint PPT presentation (displayed as a Flash slide show) on PowerShow.com - id: 5a2671-YTU2M
The Effect of pH and Aging Time on the Synthesis of TiO2 - Chitosan Nanocomposites as Photocatalyst by Sol-Gel Method at Room Temperature
Magnesium nitride was the catalyst in the first practical synthesis of borazon (cubic boron nitride).[5] Robert H. Wentorf, Jr. was trying to convert the hexagonal form of boron nitride into the cubic form by a combination of heat, pressure, and a catalyst. He had already tried all the logical catalysts (for instance, those that catalyze the synthesis of diamond), but with no success. Out of desperation and curiosity (he called it the "make the maximum number of mistakes" approach[6]), he added some magnesium wire to the hexagonal boron nitride and gave it the same pressure and heat treatment. When he examined the wire under a microscope, he found tiny dark lumps clinging to it. These lumps could scratch a polished block of boron carbide, something only diamond was known to do. From the smell of ammonia, caused by the reaction of magnesium nitride with the moisture in the air, he deduced that the magnesium metal had reacted with the boron nitride to form magnesium nitride, which was the true ...
Calcium nitride is the inorganic compound with the chemical formula Ca3N2. It exists in various forms (isomorphs), α-calcium nitride being more commonly encountered. α-Calcium nitride adopts an anti-bixbyite structure, similar to Mn2O3, except that the positions of the ions are reversed: calcium (Ca2+) take the oxide (O2−) positions and nitride ions (N3−) the manganese (Mn3+). In this structure, Ca2+ occupies tetrahedral sites, and the nitride centres occupy two different types of octahedral sites. Calcium nitride is formed along with the oxide, CaO, when calcium burns in air. It can be produced by direct reaction of the elements: 3 Ca + N2 → Ca3N2 It reacts with water or even the moisture in air to give ammonia and calcium hydroxide: Ca3N2 + 6 H2O → 3 Ca(OH)2 + 2 NH3 Like sodium oxide, calcium nitride absorbs hydrogen above 350 °C: Ca3N2 + 2 H2 → 2 CaNH + CaH2 Greenwood, Norman N.; Earnshaw, Alan (1997). Chemistry of the Elements (2nd ed.). Butterworth-Heinemann. ISBN ...
h-BN particles were subjected to compressive stress in the (0001) planes (within a silicon nitride particulate-reinforced silicon carbide composite). The occurrence of BN inclusions results from the introduction of colloidal BN into the hot isostatic pressing process. They are formed from B2O3 present as a thin surface film on the BN particles in the barrier layer. B2O3 will be molten during the pressing process and will diffuse rapidly into the powder compact and react with Si3N4 to form BN. Su ...
A very rare natural nitride, originally formed in star dust and now found in meteorites. Synthetic silicon nitride is a very important high-performance ceramic.
ŠUTTA, P., CALTA, P., MÜLLEROVÁ, J., NETRVALOVÁ, M., MEDLÍN, R., SAVKOVÁ, J., VAVRUŇKOVÁ, V. Transition from amorphous silicon to silicon nitride in thin films deposited by PECVD technology from silane diluted with nitrogen. In Conference Proceedings - 10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014. Bratislava: Institute of Electrical and Electronics Engineers Inc., 2014. s. 53-56. ISBN: 978-1-4799-5474-2 ...
Ceramic 6808 found in: 6808-BB/TP/C3 Z/S #5 SRL, 6808 SI3N4 FC LD, 6808 ZRO2 FC LD, 6808-LL/T9/C3 LD ZRO2, …silicon nitride ceramic balls,..
Sales the 591/1060 JR bearings, condition monitoring and technical supports. we can assure the quality of the SKF 591/1060 JR bearings we provide, ZENEO Bearings has a full range of bearings and balls in a variety of materials such as stainless steel, alumina oxide ceramic, silicon nitride ceramic and heavy duty plastics.. ...
In this article, we study the friction and wear durability of perfluoropolyether (PFPE) with different functional groups and molecular weights (MW) for a range of disk rotational speeds (500-7200 rpm or 1.2-17.33 m/s). A 4 mm diameter silicon nitride ball under a normal load of 4 g was employed as slider against PFPE lubricated diamond like carbon (DLC) film on magnetic hard disk. The coefficient of friction increases with increasing speeds, to certain extent, but it decreases for the higher speeds. At very high speeds, the fluctuations in the coefficient of friction of low MW PFPEs were larger than those of high MW PFPEs. The optical microscope image of the ball after sliding showed that evaporation might have occurred more easily in low MW than in high MW when sliding speed was increased due to the frictional heat generated at the interface. The wear lives of Z-lube (carboxyl group at both ends) and Z-dol are significantly higher than AS1 (alkoxy silano group at both ends) at low speed (1.2 ...
Implementation and evaluation of a biotechnology research experience for African-American high school students. Eval Program Plann. 2019 Feb;72:162-169.. Brown AT, He H, Trumper E, Valdez J, Hammond P, Griffith LG. "Engineering PEG-based hydrogels to foster efficient endothelial network formation in free-swelling and confined microenvironments. 2019.. Cangellaris OV, Corbin EO, Froeter P, Michaels JA, Li X, Gillette MU. Aligning synthetic hippocampal neural circuits via self-rolled-up silicon nitride microtube arrays. ACS Appl Mater Interfaces. 2018;42:35705-35714. Cheng CW, Biton M, Haber AL, Gunduz N, Eng G, Gaynor LT, Tripathi S, Calibasi-Kocal G, Rickelt S, Butty VL, Moreno-Serrano M, Iqbal AM, Bauer-Rowe KE, Imada S, Ulutas MS, Mylonas C, Whary MT, Levine SS, Basbinar Y, Hynes RO, Mino-Kenudson M, Deshpande V, Boyer LA, Fox JG, Terranova C, Rai K, Piwnica-Worms H, Mihaylova MM, Regev A, Yilmaz ÖH. Ketone Body Signaling Mediates Intestinal Stem Cell Homeostasis and Adaptation to Diet. Cell. ...
41457/84,85. Sangster, Raymond C.: Formation of silicon nitride from the 19th to the 21st century: a comprehensive summary and guide to the world literature / Raymond C. Sangster. Updated and rev. by David J. Fisher. - 2. ed., rev. and updated. - Pfaffikon [u.a.]: TTP, Trans Tech Publ., 2015. - [X], 1000 S. - (Materials science foundations ; 84/85). u:search: http://ubdata.univie.ac.at/AC12381427. ...
Journal of Nanomaterials is a peer-reviewed, Open Access journal that aims to bring science and applications together on nanoscale and nanostructured materials with emphasis on synthesis, processing, characterization, and applications of materials containing true nanosize dimensions or nanostructures that enable novel/enhanced properties or functions. It is directed at both academic researchers and practicing engineers. Journal of Nanomaterials will highlight the continued growth and new challenges in nanomaterials science, engineering, and nanotechnology, both for application development and for basic research. All papers should emphasize original results relating to experimental, theoretical, computational, and/or applications of nanomaterials ranging from hard (inorganic) materials, through soft (polymeric and biological) materials, to hybrid materials or nanocomposites.
Background & Aims: Magnetically molecularly imprinted polymers (MMIPs) are assumed as kind of sorbent polymers ‎which can separate or determine bioactive compounds from environment fast and specifically.  ‎Magnetic properties, stability at various conditions (temperature , ionic strength and pH) and selective ‎function are among the advantages of these polymers in determination of ...
Nitride from Zhongnuo Advanced Material (Beijing) Technology Co., Ltd.. Search High Quality Nitride Manufacturing and Exporting supplier on Alibaba.com.
Panasonic Corp of Osaka, Japan says that it has developed gallium nitride (GaN) diodes that can not only operate at a high current of 7.6kA/cm2 - four times greater than that tolerated by conventional silicon carbide (SiC) diodes with a rated voltage of 1200V - but also operate at low voltages by virtue of their lower turn-on voltage (0.8V). Also, on-resistance (RonA) is approximately halved, to 1.3mΩcm2. Production of the new diodes was enabled by a newly developed hybrid structure composed of separately embedded structure consisting of a low-voltage unit and a high-current-capable unit, in preparation for high-voltage conditions. Conventional silicon diodes are limited with regard to reducing switching losses. On the other hand, diodes based on SiC and GaN require an increased chip area to achieve high-current operation, placing limitations on the reduction of switching losses and size due to the increased operating frequency, says Panasonic. The new GaN diodes have achieved simultaneous ...
Electrochemically stable nanostructured nickel titanate (NiTiO3) was prepared by sol-gel method and the structural and electrochemical properties were studied in the presence of H2SO4+CH3OH electrolyte. XRD and Raman studies confirmed the single phase of NiTiO3 with the rhombohedral structure. Thermal stability was studied by TGA. Microstructure analysis by SEM confirmed the uniformly distributed spherical shaped NiTiO3 particles, and TEM studies showed the spherical shaped particles with an average size of 90 nm. The UV-Vis analysis shows the absorption spectrum of NiTiO3, while the FTIR spectrum showed the vibrations related to Ni-O and Ti-O stretching. Electrochemical tests were carried out by cyclic voltammetry (CV) and polarization studies. The CV measurements were made at room temperature as well as at 60°C: at room temperature, the NiTiO3 did not show any activity towards methanol oxidation whereas there observed an activity at the potential of 0.69 V at the operating temperature of ...
In this work, ZnFe2O4 spinels doped with different Ce contents were synthesized through a sol-gel method and their morphologies, structures, optical and electronic properties, adsorption capacity for CO2 and activities for CO2 photoreduction with H2O vapor were investigated. The results show that the presenc
A series of xMg/La yCozNi/MSU-S catalysts were prepared by a sol-gel method and characterized by means of N2-physisorption, FT-IR, H2-TPR, CO2-TPD, H2-TPD ...
Advanced Materials and Technologies: Growth Structures and Phase Formation in Industrially Room-Temperature Pulsed Laser Deposited FCC Ti-Based Nitride Coatings
Refractory metal nitride films in applications requiring materials with good conductivity and resistant to high temperatures and oxidizing ambients.
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The Plasma Enhanced Atomic Layer Deposition publication database entry for Gadolinium nitride films deposited using a PEALD based process at plasma-ald.com.
Calcium nitride | Ca3N2 | CID 3387080 - structure, chemical names, physical and chemical properties, classification, patents, literature, biological activities, safety/hazards/toxicity information, supplier lists, and more.
Futsuhara, M.; Yoshioka, K.; Takai, O. (1998). "Structural, electrical and optical properties of zinc nitride thin films prepared by reactive RF magnetron sputtering". Thin Solid Films (எல்செவியர்) 322 (1): 274-281. doi:10.1016/S0040-6090(97)00910-3. Bibcode: 1998TSF...322..274F. ...
Landolt-Börnstein - Group II Molecules and Radicals | Volume 29A1 | Book DOI: 10.1007/978-3-540-69954-5 | SpringerMaterials 2012
Additionally to having an API key associated with your account, exporting private event information requires the usage of a persistent signature. This enables API URLs which do not expire after a few minutes so while the setting is active, anyone in possession of the link provided can access the information. Due to this, it is extremely important that you keep these links private and for your use only. If you think someone else may have acquired access to a link using this key in the future, you must immediately create a new key pair on the My Profile page under the HTTP API and update the iCalendar links afterwards ...