The present invention relates to an organic semiconductor thin film suitably employed in electronics, photonics, bioelectronics, or the like, and a method for forming the same. The present invention further relates to a solution for an organic semiconductor used to form the organic semiconductor thin film and an organic semiconductor device using the organic semiconductor thin film. The transistor of the present invention is manufactured by forming sequentially a gate electrode (2), an insulator layer (3), a source electrode and drain electrode (4, 4) on a glass substrate (5), applying thereto a 0.05% (by mass) solution of pentacene in o-dichlorobenzene and drying the solution to form an organic semiconductor thin film (1). The present invention provides a transistor with superior electronic characteristics because the organic semiconductor thin film (1), which can be formed easily at low cost, is almost free of defects.
Semiconductor Industry, 2008. U.S. Market Overview. Since the 1990s, the trend towards global semiconductor competition has accelerated. Costs and risks for creating new semiconductor technology and production capacity have expanded rapidly, while the capabilities of competitors worldwide have increased as well. Firms compete globally to gain economies of scale in logistics, marketing, purchasing and production, and to recover the rising costs of developing technology. According to industry data, the worldwide semiconductor market was approximately $256 billion in 2007, of which the U.S. market was $43 billion, or 17 percent of the total.. Semiconductor products and process technologies are increasingly complex and interdependent, diffusing across firms and borders at rapid rates. The U.S. semiconductor industry has become global through overseas patenting, licensing, direct forms of technology transfer, international investment, acquisitions, alliances, mergers, and market strategies. Companies ...
Organic semiconductors differ from inorganic counterparts in many ways including optical, electronic, chemical and structural properties. In order to design and model the organic semiconductors, their optical properties like absorption and photoluminescence are required to be characterized. Optical characterization for this class of materials can be done using UV-VIS absorption spectrophotometers and photoluminescence spectrometers. Semiconductor film appearance and morphology can be studied with Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). Electronic properties such as ionisation potential can be characterized by probing the electronic band structure with Ultraviolet Photoelectron Spectroscopy (UPS). Charge-carrier transport properties of organic semiconductors can be studied by a number of techniques. For example, time-of-flight (TOF) and space charge limited current techniques are used to characterize "bulk" conduction properties of organic films. Organic Field Effect ...
Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integ
Highly extended polyacenes such as pentacene and naphthacene have been essential organic semiconductors for high-performance organic field-effect transistors (OFETs). Among the range of thienoacene-based organic semiconductors, materials with an internal thieno[3,2-b]thiophene substructure, such as DNTT and BTBT, have shown the best p-channel organic semiconductors for OFET applications in terms of high mobility, air stability, and good reproducibility.
A thin film transistor (TFT) device structure based on an organic semiconductor material, that exhibits a high field effect mobility, high current modulation and a low sub-threshold slope at lower operating voltages than the current state of the art organic TFT devices. The structure comprises a suitable substrate disposed with he following sequence of features: a set of conducting gate electrodes covered with a high dielectric constant insulator, a layer of the organic semiconductor, sets of electrically conducting source and drain electrodes corresponding to each of the gate lines, and an optional passivation layer that can overcoat and protect the device structure. Use of high dielectric constant gate insulators exploits the unexpected gate voltage dependence of the organic semiconductor to achieve high field effect mobility levels at very low operating voltages. Judicious combinations of the choice of this insulator material and the means to integrate it into the TFT structure are taught that would
The study presents an ammonia microsensor integrated with a readout circuit on-a-chip fabricated using the commercial 0.18 μm complementary metal oxide semiconductor (CMOS) process. The integrated sensor chip consists of a heater, an ammonia sensor and a readout circuit. The ammonia sensor is constructed by a sensitive film and the interdigitated electrodes. The sensitive film is zirconium dioxide that is coated on the interdigitated electrodes. The heater is used to provide a working temperature to the sensitive film. A post-process is employed to remove the sacrificial layer and to coat zirconium dioxide on the sensor. When the sensitive film adsorbs or desorbs ammonia gas, the sensor produces a change in resistance. The readout circuit converts the resistance variation of the sensor into the output voltage. The experiments show that the integrated ammonia sensor has a sensitivity of 4.1 mV/ppm.
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2.2 Ownership; No Implied Licenses. Subject to the licenses expressly granted herein by ON Semiconductor to Licensee, ON Semiconductor (and/or its licensors/suppliers) retains all rights, title and interest in and to the Content and all patents, copyrights, trademarks, trade secrets, and all other proprietary or intellectual rights therein. ON Semiconductor (and/or its licensors/suppliers) reserves all rights not expressly granted hereunder, and there are no implied licenses granted by ON Semiconductor hereunder. Certain elements of the Content may be provided in files/data formatted for use with or by certain third party software/tools/products. No licenses or rights to any such third party software/tools/products are granted to Licensee by ON Semiconductor. Licensee shall ensure that it has obtained all necessary licenses and rights to use any such third party software/tools/products which are necessary in order to utilize the Content.. 2.3 Restrictions. Except as expressly permitted in this ...
0087] The procedure of Example 1 was followed. A silicon substrate, which had on a surface thereof a silicon oxide film (thickness: 300 nm) to be used as a gate insulating layer, was provided as a gate electrode and the gate insulating layer. The silicon substrate was immersed for 8 hours in a 1.0 wt % solution of HMDS in toluene to form an HMDS-SAM layer on a surface of the silicon oxide film. Compound A (DPIBT) employed in Example 1 was dissolved in chloroform to give a concentration of 1 wt %, and by a spin coater, an organic semiconductor film was formed on an HMDS-SAM film formed on the silicon substrate while heating the silicon substrate at 120° C. Patterning of electrodes was conducted in a similar manner as in Example 1 to obtain an organic thin-film transistor of Example 5. With respect to the transistor, the drain voltage and drain current were measured at different gate voltages. Pronounced saturation regions were observed on drain current-drain voltage curves at the different gate ...
To quote Shakespeare, "A rose by any other name would smell as sweet"- however, the "roses" in my photo are not true roses at all. These miniature roses are made from organic semiconductor crystals. They are approximately 100 microns in diameter, which is the width of a human hair. While these crystals can reflect any color of light, I have colored them red to increase the contrast and enhance the imagination. My research focuses on understanding the crystal growth of organic semiconductors. While most semiconductor materials are inorganic, such as silicon, the compounds I work with offer an organic alternative. Organic semiconductors, if used effectively, offer several benefits such as flexible electronic applications and low energy manufacturing compared to silicon wafers. Before organic semiconductors can be used industrially, the underlying crystallization mechanism must be understood. While the image shown here would not make an effective electronic device, the rose-shape of these crystals ...
0036]Referring to FIGS. 1 and 2A, a semiconductor substrate 1 is prepared. The semiconductor substrate 1 may be a semiconductor wafer formed of a semiconductor material such as silicon. An isolation region 5s defining an active region 5a is formed in the semiconductor substrate 1. The isolation region 5s may be formed using a shallow trench isolation technique. For example, forming the isolation region 5s may include etching a field region of the semiconductor substrate 1 to form a trench, forming a buffer oxide layer on an inner wall of the trench, forming an insulating liner on the semiconductor substrate having the buffer oxide layer, forming an isolation oxide layer filling an empty space of the trench on the semiconductor substrate having the insulating liner, and planarizing the isolation oxide layer. Here, the buffer oxide layer may be a silicon oxide layer formed by a thermal oxidation method to cure damage to the semiconductor substrate 1 when the trench is formed. The insulating liner ...
TSMC launched the semiconductor industrys first 0.13-micron (µm) low-k, copper system-on-a-chip (SoC) process technology. The Company insisted on building its own R&D capabilities and made a key decision early on that contributed to this success when it declined a joint development invitation from a well-known IDM (Integrated Device Manufacturer). TSMC based its R&D team at the Companys Hsinchu headquarters and successfully developed the technology ahead of IDMs and other foundries. This accomplishment not only marked Taiwans capability to develop advanced technology but also became a cornerstone for growing Taiwans semiconductor industry ...
TY - JOUR. T1 - Modification of standard CMOS technology for cell-based biosensors. AU - Graham, Anthony H D. AU - Surguy, S M. AU - Langlois, P. AU - Bowen, Christopher R. AU - Taylor, John. AU - Robbins, J. PY - 2012/1/15. Y1 - 2012/1/15. N2 - We present an electrode based on complementary metal oxide semiconductor (CMOS) technology that can be made fully biocompatible and chemically inert using a simple, low-cost and non-specialised process. Since these devices are based on ubiquitous CMOS technology, the integrated circuits can be readily developed to include appropriate amplifiers, filters and wireless subsystems, thus reducing the complexity and cost of external systems. The unprocessed CMOS aluminium electrodes are modified using anodisation and plating techniques which do not require intricate and expensive semiconductor processing equipment and can be performed on the bench-top as a clean-room environment is not required. The resulting transducers are able to detect both the fast ...
Organic Semiconductor Optoelectronics Research Group Website, School of Physics and Astronomy, University of St Andrews, St Andrews, Scotland
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This study investigated the association between the risk for spontaneous abortions and the job type of female semiconductor workers to assess their reproductive health. The risk for spontaneous abortion for female semiconductor workers was not significantly higher for FAB and PKG workers than for clerical workers according to their job held longest. However, when the analysis was stratified for the year of conception, we found significantly higher odds for spontaneous abortions (OR 2.21, 95% CI: 1.01-4.81) in PKG workers than clerical workers when the pregnancy occurred prior to 2008.. In this study, the spontaneous abortion rates for FAB and PKG workers were 12.6% and 14.5%, respectively; these were higher than the rate of 11.1% found in clerical workers. These spontaneous abortion rates for female workers involved in semiconductor production were higher than the spontaneous abortion rate of 11.1% reported for Korean domestic 15- to 44-year-old married women [18]. In 1988, Pastides et al. first ...
Semiconductor nanowires, such as InAs, InP, β-Ga2O3, and GaP are synthesized by annealing semiconductor wafers covered with Au film at an appropriate temperature in the region of 550°â€"650°C in a N2 atmosphere. The composition of the resulting semiconductor nanowires is determined by both the substrate and the chemical conditions of growth. High-resolution transmission electron microscopy and selected area electron diffraction reveal high degrees of crystallization of the as-grown nanowires. The characteristics of the annealing method for synthesis of semiconductor nanowires are discussed ...
A general predictive method based on Canonical Correlation Analysis (CCA) is developed to identify globally correlated process modes that are responsible for the spatial variability in deep nanoscale semiconductor manufacturing. This multivariate statistical method overcomes the limitations of ordinary multiple linear regression technique by introducing canonical variates with certain properties which allow us to construct a transfer matrix to relate the predictand vector to the predictor vector directly. Principal Component Analysis (PCA), another multivariate statistical technique, is introduced to find the orthogonal modes that explain the larger fraction of the total process variations. We also discuss the constraint of sample number in CCA and propose using the leading principal components (PCAs) to replace the original raw data in correlation analysis ...
Semiconductor manufacturing facilities employ a number of hazardous gases in their production processes. Whenever these gases are stored, distributed or used in manufacturing processes, there exists the potential for a hazardous condition. The primary hazards associated with these gases include fire, explosion, and contamination resulting in product loss or unscheduled preventative maintenance. These gases must be continuously monitored to ensure the health and safety of employees, to protect property, as well as to maintain regulatory compliance.
TY - JOUR. T1 - Arsenic exposure and methylation efficiency in relation to oxidative stress in semiconductor workers. AU - Pan, Chih Hong. AU - Lin, Ching Yu. AU - Lai, Ching Huang. AU - Jeng, Hueiwang Anna. PY - 2020/5/1. Y1 - 2020/5/1. N2 - This study examined associations between oxidative stress and arsenic (As) exposure and methylation efficiency in semiconductor workers. An As-exposed group (n = 427) and a control group (n = 91) were included. The As-exposure group (n = 427) included 149 maintenance staff members and 278 production staff members representing high As exposure and low As exposure, respectively. The control group included 91 administrative staff members with no or minimal As exposure. An occupational exposure assessment was conducted to assess personal As exposure by measuring As concentrations in urine, hair, and fingernails of the subjects. Urinary As(III), As(V), monomethylarsonic (MMA), and dimethylarsinic acid (DMA) were quantified to assess an internal dose of inorganic ...
The present invention provides a thin film transistor, wherein the semiconductor channel region is patterned. Gate electrodes 102, gate insulating film 103, source electrodes 104, and drain electrodes 105 are formed on a glass substrate 101. A patterned insulating film is formed thereon, and a part of the film in the region 110 on the gate electrode is removed. An organic semiconductor film is formed thereon by vapor deposition. The organic semiconductor film 107 in the region 110, where the patterned insulating film is removed, becomes a channel region, and is separated from the organic semiconductor film 108 on the patterned insulating film 106. Therefore, the organic semiconductor channel region is patterned to have the same size as the gate electrode. In accordance with the present invention, a thin film transistor, wherein the semiconductor region is patterned precisely, becomes available.
A method for substantially improving the photo luminescent performance of a porous semiconductor, involving the steps of providing a bulk semiconductor substrate wafer of a given conductivity, wherein the substrate wafer has a porous semiconductor layer of the same conductivity as the bulk semiconductor substrate wafer, and the porous semiconductor layer is made up of a plurality of pores interspersed within a plurality of nanocrystallites, wherein each of the pores its defined by a pore wall and each of the nanocrystallites has a given thickness. Next, in the method, at least one monolayer layer of passivating material is generated on the pore wall of each of the pores, to passivate the porous semiconductor layer. The one layer of passivating material substantially eliminates dangling bonds and surface states which are associated with the porous semiconductor layer. The resulting passivated porous semiconductor layer exhibits a quantum efficiency of approximately 5 percent. In one embodiment of the
Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output.
You searched for: Author Bhat, Ritesh Ashok Remove constraint Author: Bhat, Ritesh Ashok Degree Level Doctoral Remove constraint Degree Level: Doctoral Type Theses Remove constraint Type: Theses Language English Remove constraint Language: English Subject Metal oxide semiconductors, Complementary Remove constraint Subject: Metal oxide semiconductors, Complementary Subject Radio frequency modulation--Transmitters and transmission Remove constraint Subject: Radio frequency modulation--Transmitters and transmission ...
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A MOS device that enables improved high-frequency performance and on-state characteristics. A MOS device includes a first conductive type semiconductor layer, and first and second source / drain regions of a second conductive type formed in the semiconductor layer adjacent to the upper surface of the semiconductor layer. including. The first and second source / drain regions are spaced apart from each other. The gate is formed at least partially on the semiconductor layer between the first source / drain region and the second source / drain region and is electrically isolated from the semiconductor layer. At least a particular one of the first and second source / drain regions is shaped with an effective width that is substantially greater than the width of the junction between the semiconductor layer and the particular source / drain region. It is. [Selection] Figure 1
Since optoelectronic properties of organic semiconductors (OSCs) are largely affected by the molecular packing in the solid phase, further advances of such materials require comprehensive structure-property interrelations beyond single molecule considerations. While single molecular electronic properties can be tai
Tuning kinetic competitions to traverse the rich structural space of organic semiconductor thin films - Volume 5 Issue 3 - Anna M. Hiszpanski, Petr P. Khlyabich, Yueh-Lin Loo
CiteSeerX - Scientific articles matching the query: Estimation of exciton diffusion lengths of organic semiconductors in random domains
A practical undergraduate student laboratory exercise, synthesis of organic semiconductor material, quaterthiophene, using Suzuki-Miyaura cross-coupling approach is presented with detailed instructions. In this experiment, students will learn to recognize the basic needs for this class of coupling reaction, to work with inert atmosphere using a balloon technique, and to do relatively demanding recrystallization procedure. The progress of the reaction will be monitored by using thin layer chromatography (TLC) and students will learn to make conclusions when to finish the reaction. In addition, rotary evaporation, liquid-liquid extraction, and vacuum filtration techniques are recalled. The product is analyzed using 1H NMR and UV-vis spectrometers. ...
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A first semiconductor zone of a first conduction type is formed from a semiconductor base material doped with first and second dopants. The first and second dopants are different substances and also different from the semiconductor base material. The first dopant is electrically active and causes a doping of the first conduction type in the semiconductor base material, and causes either a decrease or an increase of a lattice constant of the pure, undoped first semiconductor zone. The second dopant may be electrically active, and may be of the same doping type as the first dopant, causes one or both of: a hardening of the first semiconductor zone; an increase of the lattice constant of the pure, undoped first semiconductor zone if the first dopant causes a decrease, and a decrease of the lattice constant of the pure, undoped first semiconductor zone if the first dopant causes an increase, respectively.
A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to the one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.
This paper presents a novel, non-invasive, non-contact system to measure pulsewaveforms of artery via applying laser triangulation method to detect skin surfacevibration. The proposed arterial pulsation measurement (APM) system chiefly consists of alaser diode and a low cost complementary metal-oxide semiconductor (CMOS) imagesensor. Laser triangulation and centroid method are combined with the Fast FourierTransform (FFT) in this study. The shape and frequency of the arterial pulsation can bedetected rapidly by using our APM system. The relative variation of the pulse at differentmeasurement points near wrist joint is used as a prognostic guide in traditional Chinesemedicine (TCM). An extensive series of experiments was conducted to evaluate theperformance of the designed APM system. From experimental results, the pulse amplitudeand frequency at the Chun point (related to the small intestine) of left hand showed anobvious increase after having food. In these cases, the peak to peak amplitudes and
A method for manufacturing a semiconductor device which is equipped with a switching element having an organic semiconductor layer and a drive circuit electrically coupled to the switching element on a first surface of a flexible substrate, the method including: providing the drive circuit above a temporary substrate in advance, transferring the drive circuit to the first surface of the flexible substrate, and then providing the organic semiconductor layer by a liquid phase process.
The Focus Group Semiconductor Nanowires presents a joint research program between TUM and the IBM Research Laboratory and aims to develop an innovative platform for novel nanoelectronic and optoelectronic devices based on scaled III-V semiconductor nanowires. In this very active, cutting-edge research field, the fellowship deals with the experimental realization, physical characterization and testing of diverse monolithically integrated III-V nanowire systems and devices on Si platform. As such we will explore e.g. energy-efficient post-CMOS tunnel field effect transistors (TFET), thermoelectric energy conversion (TEC) systems based on nanowires, as well as optoelectronic devices and circuits. Several complementary techniques and core competences of different groups will be merged in this project, including advanced epitaxial growth methods on Si, electrical, optoelectronic and thermoelectric transport characterization including ultrafast pump-probe experiments, as well as device testing in ...
Oh. May be I am not able to clearly put forth my views. I meant to say it is not worth it to invest into the fab tech. Not till the cost comes down. Look at the semiconductor industry or for that matter look at the professionals in semiconductor industry. Whole ecosystem is on downward trend. Companies are consolidating, smaller companies are either throwing the towel in or getting sold. The economy of it doesnt make sense to invest into it. And barrier to entry has always been high, even now when the growth trends are downwards. It would only make sense when investment costs come down. All the 3D transistors, fin-FET, SoI (Silicon on Insulators) they have been fancy as research topics, they require very specific skill sets, high research cost, but that hasnt changed the economic landscape of semiconductor industry. There was a time when MEMS were supposed to provide new impetus to fabs but even that hasnt materialized at big economic scale ...
TY - JOUR. T1 - Design for facilities - Thoughts on interfacing process equipment and facility systems. AU - Chasey, Allan D.. PY - 2006/3. Y1 - 2006/3. N2 - When designing semiconductor manufacturing equipment to meet the highly complex challenges of todays semiconductor market, the focus historically has been on the process capability of the tool. The capital cost of the equipment, as well as the cost for operation and maintenance, is generally factored into the initial process equipment design scope; however, the impact of the equipment on facility costs are usually not included. The requirements of the production equipment drive facility design and facility costs represent a significant portion of the wafer cost. This paper explores how semiconductor manufacturing equipment can be designed to be more compatible with the facility and the infrastructure support systems. This paper will also look at some previously ignored semiconductor manufacturing equipment requirements which ultimately ...
In the present invention, a semiconductor film is formed through a sputtering method, and then, the semiconductor film is crystallized. After the crystallization, a patterning step is carried out to form an active layer with a desired shape. The present invention is also characterized by forming a semiconductor film through a sputtering method, subsequently forming an insulating film. Next, the semiconductor film is crystallized through the insulating film, so that a crystalline semiconductor film is formed. According this structure, it is possible to obtain a thin film transistor with a good electronic property and a high reliability in a safe processing environment.
A semiconductor device has a PCB with a cavity formed in a first surface of the PCB. A stress compensating structure, such as an encapsulant or dummy die, is disposed in the cavity. An insulating layer is formed over the PCB and stress compensating structure. A portion of the insulating layer is removed to expose the stress compensating structure. A conductive layer is formed over the stress compensating structure. A solder masking layer is formed over the conductive layer with openings to the conductive layer. A semiconductor package is mounted over the cavity. The semiconductor package is a large array WLCSP. Bumps electrically connect the semiconductor package and conductive layer. The semiconductor package is electrically connected to the conductive layer. The CTE of the stress compensating structure is selected substantially similar to or matching the CTE of the semiconductor package to reduce stress between the semiconductor package and PCB.
In a semiconductor device, a plurality of conductive pillars is formed over a temporary carrier. A dual-active sided semiconductor die is mounted over the carrier between the conductive pillars. The semiconductor die has first and second opposing active surfaces with first contact pads on the first active surface and second contact pads on the second active surface. An encapsulant is deposited over the semiconductor die and temporary carrier. A first interconnect structure is formed over a first surface of the encapsulant. The first interconnect structure is electrically connected to the conductive pillars and first contact pads of the dual-active sided semiconductor die. The temporary carrier is removed. A second interconnect structure is formed over a second surface of the encapsulant opposite the first surface of the encapsulant. The second interconnect structure is electrically connected to the conductive pillars and second contact pads of the dual-active sided semiconductor die.
- Friendly and flexible people to work with. - Nice internship program with presentations and interpersonal skill development activities. - Get a chance to participate in real-industry projects.
High-intensity near-IR fluorescence in semiconducting polymer dots achieved by cascade FRET strategy :Near-IR (NIR) emitting semiconducting polymer dots (Pdots) with ultrabright fluorescence have been prepared for specific cellular targeting. A series of π-conjugated polymers were synthesized to form water dispersible multicomponent Pdots by an ultrasonication-assisted co-precipitation method. By optimizing cascade energy transfer in Pdots, high-intensity NIR fluorescence (Φ = 0.32) with tunable excitations, large absorption-emission separation (up to 330 nm), and narrow emission bands (FWHM = 44 nm) have been achieved. Single-particle fluorescence imaging show that the as-prepared NIR Pdots were more than three times brighter than the commercially available Qdot705 with comparable sizes under identical conditions of excitation and detection. Because of the covalent introduction of carboxylic acid groups into polymer side chains, the bioconjugation between NIR-emitting Pdots and streptavidins ...
Article Growth and gas-sensing studies of metal oxide semiconductor nanostructures. One-dimensional (1D) nanostructures of semiconductor oxides are of interest for various applications including gas sensors. For gas sensors, nanostructures have advan...
The morphology of the semiconductor film is highly dependent on the chemical and physical nature of the dielectric surface. Patterning of dielectric surface can lead to selective patterning of the organic semiconductor in desired locations, which is important to reduce cross talk between devices. With proper control of the dielectric surface, arrays of organic semiconductor single crystals can be patterned over a large area for high performance transistors.3. Great progress has been made in the development of organic semiconductor materials. The initial demonstration of transistor activity in these films was with a narrow group of p-channel thiophene oligomers and polymers. The reported mobilities were on the order of 0.01-0.1 cm2/Vs.4,5 During the last few years, a much broader selection of molecular solids and polymers has been developed, all with mobilities above 0.1 cm2/Vs and achievable on/off ratios greater than 105.1 The chemical structures of some representative materials are shown in ...
A process for forming a thin layer exhibiting a substantially uniform property on an active surface of a semiconductor substrate. The process includes varying the temperature within a reaction chamber while a layer of a material is formed upon the semiconductor substrate. Varying the temperature within the reaction chamber facilitates temperature uniformity across the semiconductor wafer. As a result, a layer forming reaction occurs at a substantially consistent rate over the entire active surface of the semiconductor substrate. The process may also include oscillating the temperature within the reaction chamber while a layer of a material is being formed upon a semiconductor substrate.
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Research and Markets Laura Wood Senior Manager [email protected] Fax from USA: 646-607-1907 Fax from rest of the world: +353-1-481-1716 Logo: http://www.researchandmarkets.com Research and Markets (http://www.researchandmarkets.com/research/ 6551f1/3d_tsv_interconne) has announced the addition of the "3-D TSV Interconnects - Devices & Systems 2008 Report" report to their offering. The Next Revolution for Semiconductor Packaging & Circuit Assembly Industries The Semiconductor manufacturing industry is today facing more than ever the challenge to explore the so-called "More-than-Moore" 3- D integration route in order to pursue the continued aggressive scaling of the historical Moores Law. The whole Semiconductor industry supply chain is being concerned: from IDMs to Fabless and CMOS foundries, from OSATs to Substrate and Circuit Assembly players as well. We believe 3D integration with TSVs could accelerate even more current consolidation happening in CMOS wafer fabs and the shift toward a fabless ...