The present invention relates to an organic semiconductor thin film suitably employed in electronics, photonics, bioelectronics, or the like, and a method for forming the same. The present invention further relates to a solution for an organic semiconductor used to form the organic semiconductor thin film and an organic semiconductor device using the organic semiconductor thin film. The transistor of the present invention is manufactured by forming sequentially a gate electrode (2), an insulator layer (3), a source electrode and drain electrode (4, 4) on a glass substrate (5), applying thereto a 0.05% (by mass) solution of pentacene in o-dichlorobenzene and drying the solution to form an organic semiconductor thin film (1). The present invention provides a transistor with superior electronic characteristics because the organic semiconductor thin film (1), which can be formed easily at low cost, is almost free of defects.
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The Semiconductor Manufacturing source category includes operations used to manufacture p-type and n-type semiconductors and active solid-state devices from a wafer substrate. Research and development activities located at a site manufacturing p-type and n-type semiconductors and active solid-state devices are included in the definition of semiconductor manufacturing. Examples of semiconductor or related solid-state devices include semiconductor diodes, semiconductor stacks, rectifiers, integrated circuits, and transistors.. The source category includes all manufacturing from crystal growth through wafer fabrication, and test and assembly. The primary hazardous air pollutants that are controlled by this rule include but are not limited to, five chemicals that comprise over 90 percent of the total HAP emissions: hydrochloric acid (HCl), hydrogen fluoride (HF), glycol ethers, methanol, and xylene.. ...
Semiconductor Industry, 2008. U.S. Market Overview. Since the 1990s, the trend towards global semiconductor competition has accelerated. Costs and risks for creating new semiconductor technology and production capacity have expanded rapidly, while the capabilities of competitors worldwide have increased as well. Firms compete globally to gain economies of scale in logistics, marketing, purchasing and production, and to recover the rising costs of developing technology. According to industry data, the worldwide semiconductor market was approximately $256 billion in 2007, of which the U.S. market was $43 billion, or 17 percent of the total.. Semiconductor products and process technologies are increasingly complex and interdependent, diffusing across firms and borders at rapid rates. The U.S. semiconductor industry has become global through overseas patenting, licensing, direct forms of technology transfer, international investment, acquisitions, alliances, mergers, and market strategies. Companies ...
Organic semiconductors differ from inorganic counterparts in many ways including optical, electronic, chemical and structural properties. In order to design and model the organic semiconductors, their optical properties like absorption and photoluminescence are required to be characterized. Optical characterization for this class of materials can be done using UV-VIS absorption spectrophotometers and photoluminescence spectrometers. Semiconductor film appearance and morphology can be studied with Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). Electronic properties such as ionisation potential can be characterized by probing the electronic band structure with Ultraviolet Photoelectron Spectroscopy (UPS). Charge-carrier transport properties of organic semiconductors can be studied by a number of techniques. For example, time-of-flight (TOF) and space charge limited current techniques are used to characterize bulk conduction properties of organic films. Organic Field Effect ...
Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integ
Highly extended polyacenes such as pentacene and naphthacene have been essential organic semiconductors for high-performance organic field-effect transistors (OFETs). Among the range of thienoacene-based organic semiconductors, materials with an internal thieno[3,2-b]thiophene substructure, such as DNTT and BTBT, have shown the best p-channel organic semiconductors for OFET applications in terms of high mobility, air stability, and good reproducibility.
Highly extended polyacenes such as pentacene and naphthacene have been essential organic semiconductors for high-performance organic field-effect transistors (OFETs). Among the range of thienoacene-based organic semiconductors, materials with an internal thieno[3,2-b]thiophene substructure, such as DNTT and BTBT, have shown the best p-channel organic semiconductors for OFET applications in terms of high mobility, air stability, and good reproducibility.
A thin film transistor (TFT) device structure based on an organic semiconductor material, that exhibits a high field effect mobility, high current modulation and a low sub-threshold slope at lower operating voltages than the current state of the art organic TFT devices. The structure comprises a suitable substrate disposed with he following sequence of features: a set of conducting gate electrodes covered with a high dielectric constant insulator, a layer of the organic semiconductor, sets of electrically conducting source and drain electrodes corresponding to each of the gate lines, and an optional passivation layer that can overcoat and protect the device structure. Use of high dielectric constant gate insulators exploits the unexpected gate voltage dependence of the organic semiconductor to achieve high field effect mobility levels at very low operating voltages. Judicious combinations of the choice of this insulator material and the means to integrate it into the TFT structure are taught that would
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The study presents an ammonia microsensor integrated with a readout circuit on-a-chip fabricated using the commercial 0.18 μm complementary metal oxide semiconductor (CMOS) process. The integrated sensor chip consists of a heater, an ammonia sensor and a readout circuit. The ammonia sensor is constructed by a sensitive film and the interdigitated electrodes. The sensitive film is zirconium dioxide that is coated on the interdigitated electrodes. The heater is used to provide a working temperature to the sensitive film. A post-process is employed to remove the sacrificial layer and to coat zirconium dioxide on the sensor. When the sensitive film adsorbs or desorbs ammonia gas, the sensor produces a change in resistance. The readout circuit converts the resistance variation of the sensor into the output voltage. The experiments show that the integrated ammonia sensor has a sensitivity of 4.1 mV/ppm.
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2.2 Ownership; No Implied Licenses. Subject to the licenses expressly granted herein by ON Semiconductor to Licensee, ON Semiconductor (and/or its licensors/suppliers) retains all rights, title and interest in and to the Content and all patents, copyrights, trademarks, trade secrets, and all other proprietary or intellectual rights therein. ON Semiconductor (and/or its licensors/suppliers) reserves all rights not expressly granted hereunder, and there are no implied licenses granted by ON Semiconductor hereunder. Certain elements of the Content may be provided in files/data formatted for use with or by certain third party software/tools/products. No licenses or rights to any such third party software/tools/products are granted to Licensee by ON Semiconductor. Licensee shall ensure that it has obtained all necessary licenses and rights to use any such third party software/tools/products which are necessary in order to utilize the Content.. 2.3 Restrictions. Except as expressly permitted in this ...
TY - JOUR. T1 - Hybrid semiconducting polymer dot-quantum dot with narrow-band emission, near-infrared fluorescence, and high brightness. AU - Chan, Yang-Hsiang. AU - Ye, Fangmao. AU - Gallina, Maria Elena. AU - Zhang, Xuanjun. AU - Jin, Yuhui. AU - Wu, I. Che. AU - Chiu, Daniel T.. PY - 2012/5/2. Y1 - 2012/5/2. N2 - This communication describes a new class of semiconducting polymer nanoparticle-quantum dot hybrid with high brightness, narrow emission, near-IR fluorescence, and excellent cellular targeting capability. Using this approach, we circumvented the current difficulty with obtaining narrow-band-emitting and near-IR-fluorescing semiconducting polymer nanoparticles while combining the advantages of both semiconducting polymer nanoparticles and quantum dots. We further demonstrated the use of this new class of hybrid nanomaterial for effective and specific cellular and subcellular labeling without any noticeable nonspecific binding. This hybrid nanomaterial is anticipated to find use in a ...
0087] The procedure of Example 1 was followed. A silicon substrate, which had on a surface thereof a silicon oxide film (thickness: 300 nm) to be used as a gate insulating layer, was provided as a gate electrode and the gate insulating layer. The silicon substrate was immersed for 8 hours in a 1.0 wt % solution of HMDS in toluene to form an HMDS-SAM layer on a surface of the silicon oxide film. Compound A (DPIBT) employed in Example 1 was dissolved in chloroform to give a concentration of 1 wt %, and by a spin coater, an organic semiconductor film was formed on an HMDS-SAM film formed on the silicon substrate while heating the silicon substrate at 120° C. Patterning of electrodes was conducted in a similar manner as in Example 1 to obtain an organic thin-film transistor of Example 5. With respect to the transistor, the drain voltage and drain current were measured at different gate voltages. Pronounced saturation regions were observed on drain current-drain voltage curves at the different gate ...
To quote Shakespeare, A rose by any other name would smell as sweet- however, the roses in my photo are not true roses at all. These miniature roses are made from organic semiconductor crystals. They are approximately 100 microns in diameter, which is the width of a human hair. While these crystals can reflect any color of light, I have colored them red to increase the contrast and enhance the imagination. My research focuses on understanding the crystal growth of organic semiconductors. While most semiconductor materials are inorganic, such as silicon, the compounds I work with offer an organic alternative. Organic semiconductors, if used effectively, offer several benefits such as flexible electronic applications and low energy manufacturing compared to silicon wafers. Before organic semiconductors can be used industrially, the underlying crystallization mechanism must be understood. While the image shown here would not make an effective electronic device, the rose-shape of these crystals ...
0036]Referring to FIGS. 1 and 2A, a semiconductor substrate 1 is prepared. The semiconductor substrate 1 may be a semiconductor wafer formed of a semiconductor material such as silicon. An isolation region 5s defining an active region 5a is formed in the semiconductor substrate 1. The isolation region 5s may be formed using a shallow trench isolation technique. For example, forming the isolation region 5s may include etching a field region of the semiconductor substrate 1 to form a trench, forming a buffer oxide layer on an inner wall of the trench, forming an insulating liner on the semiconductor substrate having the buffer oxide layer, forming an isolation oxide layer filling an empty space of the trench on the semiconductor substrate having the insulating liner, and planarizing the isolation oxide layer. Here, the buffer oxide layer may be a silicon oxide layer formed by a thermal oxidation method to cure damage to the semiconductor substrate 1 when the trench is formed. The insulating liner ...
Benchmarking with Product Life Cycle Analysis in the Semiconductor Industry: 10.4018/irmj.1997100101: A benchmarking of seven companies which manufacture specialized semiconductor devices such as highly customized analog/digital devices demonstrates that the
Since President Obama took office in 2009, the Administration has focused on promoting innovation for the purposes of strengthening the economy, improving quality of life, and protecting the safety and security of our country.. Today, the Presidents Council of Advisors on Science and Technology (PCAST) is announcing the formation of a new working group focused on strengthening the U.S. semiconductor industry in ways that benefit the nations economic and security interests.. Semiconductors are essential to many aspects of modern life, from cellphones and automobiles to medical diagnostics to reconnaissance satellites and weapon systems. The semiconductor industry directly employs 250,000 workers, is the third largest source of U.S. manufactured exports, and has the highest level of investment in research and development (R&D) as a percentage of sales of any major industry. In addition, the semiconductor industry creates foundational technologies that enable innovation in virtually every sector ...
TSMC launched the semiconductor industrys first 0.13-micron (µm) low-k, copper system-on-a-chip (SoC) process technology. The Company insisted on building its own R&D capabilities and made a key decision early on that contributed to this success when it declined a joint development invitation from a well-known IDM (Integrated Device Manufacturer). TSMC based its R&D team at the Companys Hsinchu headquarters and successfully developed the technology ahead of IDMs and other foundries. This accomplishment not only marked Taiwans capability to develop advanced technology but also became a cornerstone for growing Taiwans semiconductor industry ...
TY - JOUR. T1 - Modification of standard CMOS technology for cell-based biosensors. AU - Graham, Anthony H D. AU - Surguy, S M. AU - Langlois, P. AU - Bowen, Christopher R. AU - Taylor, John. AU - Robbins, J. PY - 2012/1/15. Y1 - 2012/1/15. N2 - We present an electrode based on complementary metal oxide semiconductor (CMOS) technology that can be made fully biocompatible and chemically inert using a simple, low-cost and non-specialised process. Since these devices are based on ubiquitous CMOS technology, the integrated circuits can be readily developed to include appropriate amplifiers, filters and wireless subsystems, thus reducing the complexity and cost of external systems. The unprocessed CMOS aluminium electrodes are modified using anodisation and plating techniques which do not require intricate and expensive semiconductor processing equipment and can be performed on the bench-top as a clean-room environment is not required. The resulting transducers are able to detect both the fast ...
Organic Semiconductor Optoelectronics Research Group Website, School of Physics and Astronomy, University of St Andrews, St Andrews, Scotland
In the wake of mobile computing, leverage Dassault Systèmes® semiconductor industry software solutions to meet the markets robust demand using PLM Analytics.
This study investigated the association between the risk for spontaneous abortions and the job type of female semiconductor workers to assess their reproductive health. The risk for spontaneous abortion for female semiconductor workers was not significantly higher for FAB and PKG workers than for clerical workers according to their job held longest. However, when the analysis was stratified for the year of conception, we found significantly higher odds for spontaneous abortions (OR 2.21, 95% CI: 1.01-4.81) in PKG workers than clerical workers when the pregnancy occurred prior to 2008.. In this study, the spontaneous abortion rates for FAB and PKG workers were 12.6% and 14.5%, respectively; these were higher than the rate of 11.1% found in clerical workers. These spontaneous abortion rates for female workers involved in semiconductor production were higher than the spontaneous abortion rate of 11.1% reported for Korean domestic 15- to 44-year-old married women [18]. In 1988, Pastides et al. first ...
For the nearly 300 attendees at ISS 2020, opening day highlighted market and technology opportunities and a reflection on the significant pricing and international trade challenges the semiconductor manufacturing supply chain faced in 2019. Deep discussions on technology disruptions, the future of mobility and 5G, and perspectives on the semiconductor industry in Asia will mark today, Day 2. Day 3 will feature presentations on advanced computings impact on the semiconductor industry and convene an expert panel titled Stock Wars: The Rise of SemiCaps to culminate the annual SEMI kick-off event for business leaders.. Opening keynote speaker Richard Gottscho, Executive Vice President and Chief Technology Officer at Lam Research, sees computational advances as one key to the semiconductor industry evolving from a little data world, marked by engineering teams taking several months to solve wafer etching problems, to one where big data is used to quickly and efficiently address issues. With etch ...
Semiconductor nanowires, such as InAs, InP, β-Ga2O3, and GaP are synthesized by annealing semiconductor wafers covered with Au film at an appropriate temperature in the region of 550°â€650°C in a N2 atmosphere. The composition of the resulting semiconductor nanowires is determined by both the substrate and the chemical conditions of growth. High-resolution transmission electron microscopy and selected area electron diffraction reveal high degrees of crystallization of the as-grown nanowires. The characteristics of the annealing method for synthesis of semiconductor nanowires are discussed ...
A general predictive method based on Canonical Correlation Analysis (CCA) is developed to identify globally correlated process modes that are responsible for the spatial variability in deep nanoscale semiconductor manufacturing. This multivariate statistical method overcomes the limitations of ordinary multiple linear regression technique by introducing canonical variates with certain properties which allow us to construct a transfer matrix to relate the predictand vector to the predictor vector directly. Principal Component Analysis (PCA), another multivariate statistical technique, is introduced to find the orthogonal modes that explain the larger fraction of the total process variations. We also discuss the constraint of sample number in CCA and propose using the leading principal components (PCAs) to replace the original raw data in correlation analysis ...
Semiconductor manufacturing facilities employ a number of hazardous gases in their production processes. Whenever these gases are stored, distributed or used in manufacturing processes, there exists the potential for a hazardous condition. The primary hazards associated with these gases include fire, explosion, and contamination resulting in product loss or unscheduled preventative maintenance. These gases must be continuously monitored to ensure the health and safety of employees, to protect property, as well as to maintain regulatory compliance.
Providing advanced solutions for the control and monitoring of semiconductor manufacturing processes and the wide variety of manufacturing processes.
Synthesis and Properties of Heteroacenes Containing Pyrrole and Thiazine Rings as Promising n-Type Organic Semiconductor Candidates | Wei HONG; Zhongming WEI; Wei XU; Quanrui WANG; Daoben ZHU | download | BookSC. Download books for free. Find books
Among other things, one or semiconductor arrangements, and techniques for forming such semiconductor arrangements are provided. For example, one or more silicon and silicon germanium stacks are utiliz
A field effect transistor includes a semiconductor substrate having a first conduction type and functioning as a drain of the field effect transistor, and a back gate region formed in the semiconductor substrate and having a second conduction type opposite to the first conduction type. The field effect transistor also includes a source region formed in the back gate region and having the first conduction type, an insulator film formed on the semiconductor substrate and having first and second windows, and a gate electrode covered by the insulator film and located so that a channel is formed in the back gate region. Further, the field effect transistor includes a guard region formed in the semiconductor substrate and located close to the back gate region. The guard region has the second conduction type, and has a first portion located on a first side of the guard region facing the back gate region and a second portion located on a second side opposite
Organic field-effect transistors (OFETs) are potential components for large-area electronics because of their attractive advantages: light weight, cost-effective and large-area processability, flexibility and resonable performance potential. However, the commercialization of OFETs faces several technical obstacles. Low mobility of organic semiconductors limits the current-carrying capacity; high operation voltage restricts their use in many applications; easy degradation in air and instability under electrical stress usually make the lifetime too short to be useful; and contact resistance and contact matching also limit the charge injection to the semiconductor. Many of the above problems relate to interfaces in OFETs. There are two important interfaces in OFETs. The interface between organic semiconductor and the dielectric layer is of crucial importance since it is the location where charge transport in the channel occurs. The other important interface in OFETs is between the semiconductor and the
A flexible organic light emitting diode (FOLED) is a type of organic light-emitting diode (OLED) incorporating a flexible plastic substrate on which the electroluminescent organic semiconductor is deposited. This enables the device to be bent or rolled while still operating. Currently the focus of research in industrial and academic groups, flexible OLEDs form one method of fabricating a rollable display. An OLED emits light due to the electroluminescence of thin films of organic semiconductors approximately 100 nm thick. Regular OLEDs are usually fabricated on a glass substrate, but by replacing glass with a flexible plastic such as polyethylene terephthalate (PET) among others, OLEDs can be made both bendable and lightweight. Such materials may not be suitable for comparable devices based on inorganic semiconductors due to the need for lattice matching and the high temperature fabrication procedure involved. In contrast, flexible OLED devices can be fabricated by deposition of the organic ...
Okuyama et al. Nanoscale Research Letters 2011, 6:351 http://www.nanoscalereslett.com/content/6/1/351 NANO EXPRESS Open Access Magnetoluminescence from trion and biexciton in type-II quantum dot Rin Okuyama*, Mikio Eto and Hiroyuki Hyuga Abstract We theoretically investigate optical Aharonov-Bohm (AB) effects on trion and biexciton in the type-II semiconductor quantum dots, in which holes are localized near the center of the dot, and electrons are confined in a ring structure formed around the dot. Many-particle states are calculated numerically by the exact diagonalization method. ...
We present a semiconductor quantum optics formalism to study the dynamics of a coherently-driven semiconductor quantum dot interacting with an acoustic phonon bath and a high Q microcavity. A quantum master equation is derived in the polaron frame, where multiphoton and multiphoton effects are included to all orders. As applications of the theory, we study the Mollow triplet of a driven quantum dot in the regime of semiconductor cavity-QED. Pronounced signatures of electron-phonon-photon scattering are observed through excitation-induced dephasing and off-resonant cavity coupling. We also present an effective phonon master in Lindblad form and show example quantum trajectory simulations that help one to understand the features in the Mollow triplet spectra ...
Different III-V semiconductor nanowires are very important for their electrical and optical properties. Diameter of the usual nanowires lies in the 40-100 nm range and with ALE it might be potentially possible to shrink the nanowire diameter to the sub 10 nm range. In this research work we used a system for reactive ion etching, similar to the systems, which are widely used in semiconductor industry for semiconductor device fabrication, for testing ALE possibility in Lund Nano Lab. We demonstrated that with this equipment it is possible to perform ALE and used this process for etching semiconductor horizontal nanowires and to make stamps for nanoimprint lithography. Surprisingly, we found that, due to some specific properties of the ALE process and a hexagonal cross section of nanowires, which we used in our experiments, after ALE each nanowire is split in to two very thin nanowires. We believe that here the inclined nanowire surfaces act as a mask for the etch process and that potentially this ...
An apparatus and method for mass spectrometric determination of contaminant components of a thin oxide surface layer of a semiconductor wafer use a movable mechanical stage to scan and raster a large area of the wafer in a continuous scanning motion. The mass of analyte is greatly increased, resulting in improved sensitivity to trace components in the surface layer by a factor of 10-100 or more. A light beam interferometer is used to determine non-planarity from e.g. warping of the wafer and provide a correction by maintaining a constant separation between the wafer and the extraction plate or adjusting the electrical bias of the wafer relative to the extraction bias.
In accordance with the present invention, a monolithically integrated structure combines a field effect transistor and a Schottky structure in an active area of a semiconductor substrate. The field effect transistor includes a first trench extending into the substrate and substantially filled by conductive material forming a gate electrode of the field effect transistor. A pair of doped source regions are positioned adjacent to and on opposite sides of the trench and inside a doped body region. The Schottky structure includes a pair of adjacent trenches extending into the substrate. Each of the pair of adjacent trenches is substantially filled by a conductive material which is separated from trench side-walls by a thin layer of dielectric. The Schottky structure consumes 2.5% to 5.0% of the active area, and the field effect transistor consumes the remaining portion of the active area.
Osram Opto Semiconductors GmbH of Regensburg, Germany has reported what it claims is the first direct-emitting true green indium gallium nitride (InGaN) laser diode - emitting light at 515nm - with high optical output power (50mW). Osram Opto already offers blue-emitting InGaN laser diodes for commercial applications. But, in the true green 515-535nm wavelength range, efficient high-quality semiconductor lasers have been commercially available only as frequency-doubled versions. Compared with semiconductor lasers based on existing frequency doubling technology, direct-emitting green lasers are more compact, offer greater temperature stability, are easier to control, and have higher modulation capability at several 100MHz, says the firm. Although the new laser is just at the pre-development stage, in the medium term direct-emitting green lasers could therefore replace frequency-doubled lasers for many applications, says Osram Opto. The laboratory prototype achieved optical output power of 50mW ...
In a study published today in Nature Communications, a research team led by Ken Shepard, professor of electrical engineering and biomedical engineering at Columbia Engineering, and Lars Dietrich, assistant professor of biological sciences at Columbia University, has demonstrated that integrated circuit technology, the basis of modern computers and communications devices, can be used for a most unusual application-the study of signaling in bacterial colonies. They have developed a chip based on complementary metal-oxide-semiconductor (CMOS) technology that enables them to electrochemically image the signaling molecules from these colonies spatially and temporally. In effect, they have developed chips that listen to bacteria.. This is an exciting new application for CMOS technology that will provide new insights into how biofilms form, says Shepard. Disrupting biofilm formation has important implications in public health in reducing infection rates.. The researchers, who include PhD students ...
Bipolar transistors are so named because they conduct by using both majority and minority carriers. The bipolar junction transistor, the first type of transistor to be mass-produced, is a combination of two junction diodes, and is formed of either a thin layer of p-type semiconductor sandwiched between two n-type semiconductors (an n-p-n transistor), or a thin layer of n-type semiconductor sandwiched between two p-type semiconductors (a p-n-p transistor). This construction produces two p-n junctions: a base-emitter junction and a base-collector junction, separated by a thin region of semiconductor known as the base region (two junction diodes wired together without sharing an intervening semiconducting region will not make a transistor).. The BJT has three terminals, corresponding to the three layers of semiconductor - an emitter, a base, and a collector. It is useful in amplifiers because the currents at the emitter and collector are controllable by a relatively small base current.[33] In an ...
A method is provided for rapid firing at low temperatures to remove impurities from the semiconductor surface prior to deposition in situ. Advantageously, the short time low temperature process consumes very little thermal expense, making the process suitable for modern high density circuits with shallow junctions. In addition, the throughput is greatly improved by low temperature firing, especially in combination with low temperature plasma cleaning and low temperature wafer loading prior to firing, and deposition at lower temperatures than conventional epitaxial deposition after firing. The process enables epitaxial deposition of a silicon containing layer on a semiconductor surface, in particular epitaxial deposition on a silicon germanium base layer. By using low temperature firing, the silicon germanium base layer can be cleaned to facilitate further epitaxial deposition without relaxing the strained crystal structure of silicon germanium. Semiconductor Substrates, Silicon
[128 Pages Report] Check for Discount on Global Metal-Oxide-Semiconductor Field-Effect Transistor Sales Market Report 2021 report by QYResearch Group. This report studies sales (consumption) of Metal-Oxide-Semiconductor Field-...
Despite their potential use as pixel-switching elements in displays, the bias and light instability of mixed oxide semiconductor thin-film transistors (TFTs) still limit their application to commercial products. Lack of reproducible results due to the sensitivity of the mixed oxides to air exposure and chemical contamination during or after fabrication hinders any progress towards the achievement of stable performance. Consequently, one finds in literature several theories and mechanisms, all justified, but most of them conflict despite being on the same subject matter. In this study, we show that under an optimized fabrication process, which involves the in situ passivation of a mixed oxide semiconductor, we can reduce the bias and light instability of the mixed-oxide semiconductor TFTs by decreasing the semiconductor thickness. We achieve a negligible threshold voltage shift under negative bias combined with light illumination stress when the mixed oxide semiconductor thickness is around three
Further issues coated comprise: the speculation of strength bands in crystals, of moment quan-tization and simple excitations in solids, of the dielectric homes of semicon-ductors with an emphasis on dielectric screening and paired interfacial modes, of electron scattering with phonons, plasmons, electrons and photons, of the derivation of delivery equations in semiconductors and semiconductor nanostructures just a little on the quantum point, yet typically on the semi-classical point. The textual content offers examples proper to present examine, therefore not just approximately Si, but additionally approximately III-V compound semiconductors, nanowires, graphene and graphene nanoribbons. specifically, the textual content supplies significant emphasis to plane-wave tools utilized to the digital constitution of solids, either DFT and empirical pseudopotentials, regularly paying cognizance to their results on digital delivery and its numerical therapy. The middle of the textual content is digital ...
A transparent amorphous carbon layer is formed. The transparent amorphous carbon layer has a low absorption coefficient such that the amorphous carbon is transparent in visible light. The transparent amorphous carbon layer may be used in semiconductor devices for different purposes. The transparent amorphous carbon layer may be included in a final structure in semiconductor devices. The transparent amorphous carbon layer may also be used as a mask in an etching process during fabrication of semiconductor devices.
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To overcome the issues of mobility degradation and charge trapping in silicon high-κ MOSFET, a stacked Y₂O₃(top)/HfO2(bottom) gate dielectric on silicon substrate has been developed. Compared to the HfO₂ reference, the new ...
Zinc oxide (ZnO) is a wide-bandgap material with excellent optical properties for optoelectronics applications. ZnO nanostructures are attractive for research because it is easy to fabricate in single-crystalline form and it has interesting physical properties at the nanoscale. In this paper, we report our successful growth of a p-type ZnO nanorods/n-GaN film heterojunction ultraviolet light-emitting diode (LED). The heterojunction LED shows its advantages over a p-ZnO film/n-GaN film heterojunction. The LED demonstrates a rectifying I-V characteristics with a turn-on voltage of 2.7 V. The ideality factor is 6.5. The existences of interface charges in the interface are the reason for this low turn-on voltage and high ideality factor in the heterojunction. Electroluminescence (EL) spectra of the LED consist of an ultraviolet peak at 378 nm and a broad yellow emission centered at 560 nm. Fitting and comparing EL of the LED with PL of p-ZnO and n-GaN show that p-ZnO contributes more to the EL than ...
Security is a critical aspect in modern circuit design, but research into hardware security at the device level is rare as it requires modification of existing technology nodes. With the increasing challenges facing the semiconductor industry, interest in out-of-the-box security solutions has grown, even if this implies introducing novel materials such as two-dimensional layered semiconductors. Here, we show that high-performance, low-voltage, two-dimensional black phosphorus field-effect transistors (FETs) that have reconfigurable polarities are suitable for hardware security applications. The transistors can be dynamically switched between p-FET and n-FET operation through electrostatic gating and can achieve on-off ratios of 105 and subthreshold swings of 72 mV dec−1 at room temperature. Using the transistors, we create inverters that exhibit gains of 33.3 and are fully functional at a supply voltage of 0.2 V. We also create a security primitive circuit with polymorphic NAND/NOR obfuscation
Semiconductor physics, being one of the largest branches of solid state physics, studies both the fundamental principles of nature and the complexity of its systems. Semiconductors reflect the enormous diversity in phenomena and complexity in nature more vividly than most other physical systems. Clearly, semiconductors form the heart of modern technology, as every chip and every laser in any high tech gadget is made out of them. What renders semiconductors really unique and fascinating, however, is their incredible richness in phenomena, and the enormous range of their physical parameters.. Where, do you think, can we study atoms in extreme conditions that naturally only occur in neutron stars? Where, do you believe, can we watch free quarks - a breakup of the fundamental electrical charge? In semiconductors! In fact, recently Horst Störmer was awarded the nobel prize for finding free fractional charges in a semiconductor called Galliumarsenide. The physical properties of semiconductors can be ...
More PC12 cells adhered to the nanowire squares than to any of the other surfaces, but only 50 percent of the cells grew normally. The other 50 percent spread in all directions, like the cells on the randomly textured surfaces.. This tells us that the actual shape of the surface characteristics influences the behavior of the cells, Bain says. Its a non-chemical way of influencing the interaction between the material and the body. Thats something we can explore as we continue working to develop new biomedical technologies.. The paper, Surface Topography and Chemistry Shape Cellular Behavior on Wide Band-Gap Semiconductors, is published in Acta Biomaterialia. Senior author of the paper is Dr. Albena Ivanisevic, an associate professor of materials science and engineering at NC State and associate professor of the joint biomedical engineering program at NC State and UNC-Chapel Hill. The papers co-authors include Dr. Ramon Collazo, an assistant professor of materials science and engineering ...
We demonstrate that a combination of ultrafast wafer bonded semiconductor disk laser and a bismuth-doped fiber amplifier provides an attractive design for high power 1.33 mu m tandem hybrid systems. Over 0.5 W of average output power was achieved at a repetition rate of 827 MHz that corresponds to a pulse energy of 0.62 nJ. (C) 2014 Optical Society of America ...
We report on the design and fabrication of ZnO-based integrated inverters consisting of normally-on metal-semiconductor field-effect transistors and AgxO Schottky diodes as level shifters. The inverters show high gain values up to 197 at 3 V operating voltage and low uncertainty levels in the range of 0.13 V. The influence of the level shifter and the channel material/thickness on the performance of the inverters has been investigated. Using Zn0.997Mg0.003O for the channel thin film leads to high reproducibility (90%) of the devices. A logic NOR-gate has been implemented showing the possibility to fabricate a complete logic ...
Electronic and photonic materials have greatly changed modern life. Without them, computers, telecommunication systems, compact disc players, video cameras, and all the electronics with which we have become accustomed would not be possible. The study of electronic and photonic materials is a natural bridge between the fields of electrical engineering and material science. Students in electrical engineering will benefit from this minor because they will better understand the materials with which they will design electronic and photonic devices, such as transistors on a computer chip or semiconductor lasers in a compact disc player. Training in the field of electronic and photonic materials requires study of the processing and characterization of these materials to help engineers develop ways to lower cost and improve performance. This knowledge will help prepare students to enter the semiconductor industry or pursue graduate studies.. ...
It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.
As part of the JST CREST Program, a team of Takayuki Iwasaki, Mutsuko Hatano and colleagues at the Tokyo Institute of Technology, the Japan Science and Technology Agency (JST) and Toshiharu Makino at the National Institute of Advanced Industrial Science and Technology (AIST) has succeeded in developing a new method for sensing internal electric fields at the interior of operating semiconductor devices.. Semiconductors lie at the heart of many of the electronic devices that govern our daily lives. The proper functioning of semiconductor devices relies on their internally generated electric fields. Being able to measure these fields on the nanoscale is crucial for the development of next-generation electronics, but present techniques have been restricted to measurements of the electric field at a semiconductors surface. The technique exploits the response of an artificially introduced single electron spin to variations in its surrounding electric field, and enabled the researchers to study a ...
TY - JOUR. T1 - Effect of the Si/TiO2/BiVO4 Heterojunction on the Onset Potential of Photocurrents for Solar Water Oxidation. AU - Jung, Hyejin. AU - Chae, Sang Youn. AU - Shin, Changhwan. AU - Min, Byoung Koun. AU - Joo, Oh Shim. AU - Hwang, Yun Jeong. N1 - Publisher Copyright: © 2015 American Chemical Society.. PY - 2015/3/18. Y1 - 2015/3/18. N2 - BiVO4 has been formed into heterojunctions with other metal oxide semiconductors to increase the efficiency for solar water oxidation. Here, we suggest that heterojunction photoanodes of Si and BiVO4 can also increase the efficiency of charge separation and reduce the onset potential of the photocurrent by utilizing the high conduction band edge potential of Si in a dual-absorber system. We found that a thin TiO2 interlayer is required in this structure to realize the suggested photocurrent density enhancement and shifts in onset potential. Si/TiO2/BiVO4 photoanodes showed 1.0 mA/cm2 at 1.23 V versus the reversible hydrogen electrode (RHE) with 0.11 ...
A method of forming conductive contacts to drain and source regions of a semiconductor device such as a field effect transistor (FET). A gate structure is formed over a portion of a semiconductor substrate, wherein the gate structure includes: a gate dielectric on a surface of the semiconductor substrate, a conductive gate aligned on the gate dielectric, a silicide layer aligned on the conductive gate, and a silicon nitride cap aligned on the silicide layer. Insulative spacers are formed on sidewalls of the gate structure, and the insulative spacers contact the semiconductor substrate. A drain region and a source region are formed within the semiconductor substrate, wherein a channel region is disposed between the drain region and the source region, and wherein the gate structure is over the channel region. After an insulative region containing a photosensitive material, such as boro-phoso-silicate glass, is formed over the gate structure and the semiconductor substrate, a cavity over the drain region
A laser diode, (LD), injection laser diode (ILD), or diode laser is a semiconductor device similar to a light-emitting diode in which the laser beam is created at the diodes junction. Laser diodes are the most common type of lasers produced, with a wide range of uses that include fiber optic communications, barcode readers, laser pointers, CD/DVD/Blu-ray disc reading/recording, laser printing, laser scanning and light beam illumination. A laser diode is electrically a PIN diode. The active region of the laser diode is in the intrinsic (I) region, and the carriers (electrons and holes) are pumped into that region from the N and P regions respectively. While initial diode laser research was conducted on simple P-N diodes, all modern lasers use the double-hetero-structure implementation, where the carriers and the photons are confined in order to maximize their chances for recombination and light generation. Unlike a regular diode, the goal for a laser diode is to recombine all carriers in the I ...