Envisioned is a solar powered thin film device that converts carbon dioxide and water vapor into methane using a composite of tungsten(VI) oxide nanowires and titanium(IV) oxide nanowires. Tungsten(VI) oxide nanowires are capable of absorbing a higher percentage of the suns radiation compared to titanium(IV) nanowires since WO3 nanowires absorb blue light and TiO2 nanowires absorb UV light. However, WO3 nanowires have a lower light energy conversion efficiency and a lower photostability compared to TiO2 nanowires. This poster discusses the synthesis of the WO3 nanowires. It is important to synthesize WO3 nanowires in different sizes and shapes to show that the material is tunable and scalable. Doing so will allow the material to have broader applications.
High-aspect ratio ZnO nanowires have become one of the most promising products in the nanosciences within the past few years with a multitude of applications at the interface of optics and electronics. The interaction of zinc with cells and organisms is complex, with both deficiency and excess causing severe effects. The emerging significance of zinc for many cellular processes makes it imperative to investigate the biological safety of ZnO nanowires in order to guarantee their safe economic exploitation. In this study, ZnO nanowires were found to be toxic to human monocyte macrophages (HMMs) at similar concentrations as ZnCl2. Confocal microscopy on live cells confirmed a rise in intracellular Zn2+ concentrations prior to cell death. In vitro, ZnO nanowires dissolved very rapidly in a simulated body fluid of lysosomal pH, whereas they were comparatively stable at extracellular pH. Bright-field transmission electron microscopy (TEM) showed a rapid macrophage uptake of ZnO nanowire aggregates by ...
Single-crystal ZnO nanowires long up to several microns were fabricated by one-step electrochemical deposition. A template-based process employing track-etched polycarbonate (TE-PC) membranes was used for this purpose. The morphology and the structure characteristics of the ZnO nanowires were analyzed by means of Scanning Electron Microscopy (SEM), Focused Ion Beam (FIB), Transmission Electron Microscopy (TEM), and Selected Area Electron Diffraction (SAED). The growth process conditions turned out to have a marked influence on the crystal nature and morphology of the nanowires. Deposition rates ranging from 0.4 nm s -1 and up to 0.6 nm s -1 were recorded for the growth of ZnO nanowires. The obtained results showed that by using carefully controlled deposition conditions single crystalline nanowires and fine-grained structures can be routinely obtained. © 2012 The Electrochemical Society ...
In the present work, three junctions were fabricated on textile fabric as an alternative substrate for harvesting piezoelectric potential. First junction was formed on ordinary textile as (textile/multi-walled carbon nanotube film/zinc oxide nanowires (S1: T/CNTs/ZnO NWs)) and the other two were formed on conductive textile with the following layer sequence: conductive textile/zinc oxide nanowires (S2: CT/ZnO NWs) and conductive textile/multi-walled carbon nanotubes film/zinc oxide nanowires (S3: CT/CNTs/ZnO NWs). Piezoelectric potential was harvested by using atomic force microscopy in contact mode for the comparative analysis of the generated piezoelectric potential. ZnO NWs were synthesized by using the aqueous chemical growth method. Surface analysis of the grown nanostructures was performed by using scanning electron microscopy and transmission electron microscopy. The growth orientation and crystalline size were studied by using X-ray diffraction technique. This study reveals that textile ...
Pentagon-shaped silicon wires with linewidth around 300 nm are successfully fabricated by using the Si/SiGe epitaxy technique, reactive ion etching, and subsequent selective chemical etching. The nanowires are oxidized in wet O2 at 750 ◦C and 850 ◦C. The oxide and interface morphology are characterized by cross-sectional scanning electron microscope images. It is found that the oxidized nanowire following oxidation at 750 ◦C still keeps its pentagon shape even if it has been oxidized for 19 h. However, the oxidized samples at 850 ◦C become circular in shape. The oxidation-temperature dependence of the sample shapes is discussed. Our results should be useful in generating silicon nanowires coated with SiO2 in microelectronic technology with careful selection of the SiO2 growth temperatures. PACS: 85.42; 81.15; 81.60 Field-effect devices having SiO2-coated silicon nanowires acting as trenches have recently received great attention, since new physical phenomena with applications in future verylarge
Silver nanowires 90 nm in diameter and 9 µm in length have been synthesized using different capping agents: polyvinyl pyrrolidone (PVP) and alkyl thiol of different chain lengths. The nanowire structure is not influenced by the displacement of PVP by alkyl thiols, although alkyl thiols modify the lateral aggregation of nanowires. We examined the effect of the capping agent and the deposition method on the optical and electrical properties of films prepared by Spray and the Langmuir-Schaefer methodologies. Our results revealed that nanowires capped with PVP and C8-thiol present the best optoelectronic properties. By using different deposition techniques and by modifying the nanowire surface density, we can modulate the optoelectronic properties of films. This strategy allows obtaining films with the optoelectronic properties required to manufacture touch screens and electromagnetic shielding.
Nanowires (NWs) are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW) is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW), is synthesized and characterized for application in photovoltaic device. Si NWs are prepared using wet chemical etching method which is commonly used as a simple and low cost method for producing nanowires of the same substrate material. The process conditions are adjusted to find the best quality of Si NWs. Morphology of Si NWs is studied using a field emission scanning electron microscopic technique. An energy dispersive X-Ray analyzer is also used to provide elemental identification and quantitative compositional information. Subsequently, Schottky type solar cell samples are fabricated on Si and Si NWs using ITO and Ag contacts. The junction properties are calculated using I-V curves in dark
Low Cost Environmental Sensors Using Zinc Oxide Nanowires and Nanostructures - Volume 1439 - Nima Mohseni Kiasari, Saeid Soltanian, Bobak Gholamkhass, Peyman Servati
Nanowire devices are provided based on carbon nanotubes or single-crystal semiconductor nanowires. The nanowire devices may be formed on a silicon substrate or other suitable substrate. Electrodes may be patterned on the substrate. Catalyst sites may be formed on the electrodes prior to nanowire growth. Chemical vapor deposition techniques may be used to grow the nanowires at the catalyst sites. A material such as an insulator may be formed on the nanowires following nanowire growth. The insulator may be planarized using chemical-mechanical polishing or other suitable techniques. The resulting nanowire device may be used in chemical or biological sensors, as a field emitter for displays, or for other applications.
Porous silicon nanowires (PSiNWs) have been prepared by metal-assisted chemical etching method on the n-Si substrate. The presence of nano-pores with pore size ranging between 10-50nm in SiNWs was confirmed by electron tomography (ET) in the transmission electron microscope (TEM). The PSiNWs give strong photoluminescence peak at red wavelength. Ultra-low reflectance of ,5% span over wavelength 250 nm to 1050 nm has been measured. The finite-difference time-domain (FDTD) method has been employed to model the optical reflectance for both Si wafer and PSiNWs. Our calculation results are in agreement with the measured reflectance from nanowires length of 6 µm and 60% porosity. The low reflectance is attributed to the effective graded index of PSiNWs and enhancement of multiple optical scattering from the pores and nanowires. PSiNW structures with low surface reflectance can potentially serve as an antireflection layer for Si-based photovoltaic devices ...
Copper germanate (CuGeO3) nanowires have been synthesized by the hydrothermal deposition process using GeO2 and copper foil as the resource as well as the deposition substrate. The factors including hydrothermal temperature, pressure and duration of the process were investigated in order to analyze the processing parameters that control the formation process, morphology and size of the nanowires. The dependence of the nanowires properties on the growth conditions shows that the CuGeO3 nanowires can be synthesized in a large range of different hydrothermal parameters from 400 °C to 250 °C. The hydrothermal pressure has an important effect on the formation and growth of the CuGeO3 nanowires. The CuGeO3 nanowires exhibit good electrochemical cyclic voltammetry characteristics owing to offering many advantages in sensing applications including their small size, high aspect ratio and conductance. ...
Metallic nanowires have useful applications in scanning tunneling microscopes and atomic force microscopes due to their unique sensitivity to force and electricity. These unique properties arise because of the large surface area to volume ratio. One of these properties is that introducing twinning planes the mechanical properties of metallic nanowires can be altered. The effects of twinning planes on metallic nanowires were studied using molecular dynamics simulations. Silver, copper, and nickel nanowires with and without twinning planes were simulated with engineering strain until the first yielding stress was obtained. The radial simulations showed that as the radius of twinned nanowires increased, the strength gained by introducing the twinning planes increased. The temperature simulations showed that nanowires with twinning planes were stronger than their un-twinned counterparts as temperature increased. The purpose of this investigation was to better understand the effect twinning planes had on
Page contains details about Au-coated silicon nanowire array . It has composition images, properties, Characterization methods, synthesis, applications and reference articles : nano.nature.com
Page contains details about CD45 antibody-functionalized silicon nanowire array . It has composition images, properties, Characterization methods, synthesis, applications and reference articles : nano.nature.com
LONDON - In the 2016 year, the value of the world nanowire-based device market stood at USD 1.2 billion.. By late 2017, the market is set to be estimated at USD 1.6 billion, whilst in 2022 the sector is likely to amount to around USD 6 billion. From 2017 to 2022, the market is set to gain traction, posting a considerable CAGR of 30.6%.. The optoelectronic devices sector is anticipated to gain traction at a 29.9% CAGR, from a value of USD 929 million in 2017 to amount to USD 3.4 billion by 2022.. The energy devices sector is projected to gain momentum, from USD 389 million as of 2017 to USD 1.4 billion by end-2022, demonstrating a 29.2% CAGR.. New research report "Nanowire-based Devices: Technologies and Global Markets" prepared by BCC Research offers an all-encompassing analysis of the marketplace.. The study delved deep into the market and technology background, covering the nanotechnology industry, historical development of nanowire-based devices, applications and types of nanowire-based ...
As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry and academia. To understand device physics in depth and to assess the performance limits of SNWTs, simulation is becoming increasingly important. The objectives of this thesis are: 1) to theoretically explore the essential physics of SNWTs (e.g., electrostatics, transport and bandstructure) by performing computer-based simulations, and 2) to assess the performance limits and scaling potentials of SNWTs and to address the SNWT design issues. A full three- dimensional, self-consistent, ballistic SNWT simulator has been developed based on the effective-mass approximation with which we have evaluated the upper performance limits of SNWTs with various cross-sections (i.e., triangular,
As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry and academia. To understand device physics in depth and to assess the performance limits of SNWTs, simulation is becoming increasingly important. The objectives of this thesis are: 1) to theoretically explore the essential physics of SNWTs (e.g., electrostatics, transport and bandstructure) by performing computer-based simulations, and 2) to assess the performance limits and scaling potentials of SNWTs and to address the SNWT design issues. A full three- dimensional, self-consistent, ballistic SNWT simulator has been developed based on the effective-mass approximation with which we have evaluated the upper performance limits of SNWTs with various cross-sections (i.e., triangular,
The detection of myoglobin (Myo), cardiac troponin I (cTnI), creatine kinase-MB (CK-MB), and b-type natriuretic peptide (BNP) plays a vital role in diagnosing cardiovascular diseases. Here we present single site-specific polyaniline (PANI) nanowire biosensors that can detect cardiac biomarkers such as Myo, cTnI, CK-MB, and BNP with ultra-high sensitivity and good specificity. Using single PANI nanowire-based biosensors integrated with microfluidic channels, very low concentrations of Myo (100 pg/mL), cTnI (250 fg/mL), CK-MB (150 fg/mL), and BNP (50 fg/mL) were detected. The single PANI nanowire-based biosensors displayed linear sensing profiles for concentrations ranging from hundreds (fg/mL) to tens (ng/mL). In addition, devices showed a fast (few minutes) response satisfying respective reference conditions for Myo, cTnI, CK-MB, and BNP diagnosis of heart failure and for determining the stage of the disease. This single PANI nanowire-based biosensor demonstrated superior biosensing reliability with the
We investigated Si doping effect on GaN nanowires and GaN films grown by metal-organic chemical vapor deposition (MOCVD). Si as n-type dopant is incorporated to GaN nanowires and GaN films controlled by SiH4 flow rate (0, 1, 5, 8, and 10 sccm). The charge concentration and mobility of GaN films increased and decreased, respectively, as increasing the SiH4 flow rate, whereas those for GaN nanowires were not influenced by the SiH4 flow rate. Significant vacancies and impurities resulted in the intense yellow band in GaN nanowires as compared with GaN films, which leads to the large device-to-device variation and negligible dependence of Si doping and the SiH4 flux rate on the electrical properties of GaN nanowires ...
Conductive nanowires were fabricated in GaN thin film by selectively doping of Al along threading dislocations. Electrical current flow localized at the nanowires was directly measured by a contact mode atomic force microscope. The current flow at the nanowires was considered to be Frenkelâ€"Poole emission mode, suggesting the existence of the deep acceptor level along the nanowires as a possible cause of the current flow. The results obtained in this study show the possibility for fabricating nanowires using pipe-diffusion at dislocations in solid thin films ...
... Zaiping Zeng, Alexia Petoni, Christos S. Garoufalis, Sotirios Baskoutas and Gabriel Bester. Phys. Chem Chem. Phys.17 (2) 1197-1203 (2015). Using the atomistic pseudopotential method complemented by configuration interaction calculations, we have studied the electronic and optical properties of ZnO nanowires (NWs) in the presence of quantum confinement effects. Our results indicate that the near-band-edge exciton experiences a crossover from an in-plane polarized A-exciton (for D ≥ 3 nm) to an out-of-plane polarized C-exciton (for D , 3 nm) due to quantum confinement. This transition leads to a non-monotonic variation of Stokes shift, exhibiting a maximum value around the critical diameter of 3 nm. The observed behavior is analyzed by a stepwise inclusion of correlation effects, leading to a comprehensive description of the excitonic fine structure.. ...
Hong, I.-H., Liao, Y.-C. and Yen, S.-C. (2009), Self-Organization of a Highly Integrated Silicon Nanowire Network on a Si(110)-16 × 2 Surface by Controlling Domain Growth. Adv. Funct. Mater., 19: 3389-3395. doi: 10.1002/adfm.200900974 ...
To identify pathogens, millions of bar-coded, antibody-carrying nanowires are floated in a neutral liquid called an assay buffer, into which samples of suspected pathogens are injected. If a pathogen meets its corresponding antibodies, they will join creating nanowires, antibody, antigen sandwich that will fluoresce, or glow, under a special light. To identify individual pathogens, the system takes two digital mug shots in quick succession. In the first the special light is off, and the barcodes are visible. In the second the light is on and the pathogen-fingering nanowires are glowing. A computer then matches each glowing wire in the second photo to its barcode. The advantage of the system is that many kinds of bar-coded antibodies can be mixed together in the assay buffer liquid and can be reused ...
Although a trade-off clearly exists in choosing nanowire length for a single detector (speed and yield improve for shorter nanowires while longer nanowires offer a larger coverage area for multimode signals), the superconducting nanowire photodetector array simultaneously combines many of the advantages of short and long nanowires.. One realization of a superconducting nanowire photodetector array utilizes a spatially interleaved array of four serpentine, superconducting nanowires that occupy a region 7 to 20 µm in diameter to form a single optical active area. In this case, each nanowire is four times shorter than would be needed if only a single nanowire had been used to cover the same total area. Therefore, each of the four shorter nanowires is faster and can be produced with higher yield, while the combination of elements covers a large area with tightly packed wires.. When illuminated by a single photon, only one of the interleaved nanowires registers a detection event. This single photon ...
Sam Crawford explains his groundbreaking research into controlling nanowire growth in the Laboratory for Nanophotonics and Electronics at MIT.MIT graduate student Samuel C. Crawford, working in Associate Professor Silvija Gradečaks Laboratory for Nanophotonics and Electronics, is lending a new understanding to growing semiconducting nanowires for solar cells, LEDs and other uses.. Crawfords research demonstrated control of the composition and diameter along individual nanowires composed of indium gallium nitride (InGaN) by varying the flow of gaseous precursors containing the desired materials, such as gallium, through a quartz chamber containing substrates coated with gold seed particles. "Essentially what were doing is changing the flows of our III and V precursors (elements from columns III and V of the periodic table) during growth in order to change the composition and morphology of the nanowires," Crawford says. Crawford and colleagues grew nanowires with a "caterpillar" shape by ...
ZnO nanowires are source of a great interest in the scientific community due to numerous properties and the wide range of possible applications of this nanoscale material. Influence of the ZnO NWs growth parameters such as growth temperature and growth time on the NWs PL is studied. FESEM images correlated with PL results shows that ZnO NWs growth is optimum for a temperature of 900 ˚C and a growth time of 60 min. PL of ZnO NWs grown on quartz substrate at room temperature show a band gap emission from 375 to 380 nm depending of the NWs size and a defect band from 440 to 760 nm commonly with 3 picks at 505 nm (2.45 eV), 550 nm (2,25 eV) and 630 nm (1.96 eV ...
This letter demonstrates a vertical silicon-nanowire (SiNW)-based tunneling field-effect transistor (TFET) using CMOS-compatible technology. With a Si p|su
Multimillion-atom molecular dynamics simulations of silicon diselenide nanowires are used to study mechanical properties and changes in nanowire structure under strain. The nanowires transform from a body-centered orthorhombic structure to a body-centered tetragonal structure under uniaxial strain, which causes an unexpected elongation in one of the transverse directions. For larger strains, the nanowires undergo a process of local amorphization, followed by fracture at one of the resulting crystalline-amorphous interfaces. The critical strain for fracture is 15%. Local temperature and stress distributions after failure are interpreted in terms of the local amorphization. © 2001 American Institute of Physics ...
In this study, the behavior of P incorporation GaAsP during ternary nanowires epitaxial growth is investigated. Detailed electron microscopy investigations indicate that (1) the P concentration in the nanowires is higher than that in the simultaneously grown planar layer and (2) the higher growth temperature leads to a higher P concentration in ternary nanowires. We anticipate that the minimization of misfit strain between the GaAsP layer and its underlying GaAs substrate and the complexity of precursor decomposition are responsible for the observed varied P concentrations. These findings implicate that the compositional control in ternary GaAsP nanowires is much more complicated than anticipated ...
A network of nanowires may be used for a sensor. The nanowires are metallic, each nanowire has a thickness of at most 20 nm, and each nanowire has a width of at most 20 nm. The sensor may include nanowires comprising Pd, and the sensor may sense a change in hydrogen concentration from 0 to 100%. A device may include the hydrogen sensor, such as a vehicle, a fuel cell, a hydrogen storage tank, a facility for manufacturing steel, or a facility for refining petroleum products.
Home | Products | Nano-Silver 20nm Silver Nanowires ( Model: MGT-NW-S20 )2016-01-20 Silver nanowire is a kind of grayish powder and can be dispersed in different solvents ( such as water, ethanol, isopropanol ) to generate colloidal suspensions....
TY - JOUR. T1 - Composite Polymer Electrolytes with Li7La3Zr2O12 Garnet-Type Nanowires as Ceramic Fillers. T2 - Mechanism of Conductivity Enhancement and Role of Doping and Morphology. AU - Yang, Ting. AU - Zheng, Jin. AU - Cheng, Qian. AU - Hu, Yan Yan. AU - Chan, Candace. PY - 2017/7/5. Y1 - 2017/7/5. N2 - Composite polymer solid electrolytes (CPEs) containing ceramic fillers embedded inside a polymer-salt matrix show great improvements in Li+ ionic conductivity compared to the polymer electrolyte alone. Lithium lanthanum zirconate (Li7La3Zr2O12, LLZO) with a garnet-type crystal structure is a promising solid Li+ conductor. We show that by incorporating only 5 wt % of the ceramic filler comprising undoped, cubic-phase LLZO nanowires prepared by electrospinning, the room temperature ionic conductivity of a polyacrylonitrile-LiClO4-based composite is increased 3 orders of magnitude to 1.31 × 10-4 S/cm. Al-doped and Ta-doped LLZO nanowires are also synthesized and utilized as fillers, but the ...
In this communication, we report a facile solution route to synthesize single crystalline wurtzite ZnS nanowires at low temperature (170 °C) using MOCVD system. Observations on the microstructure of the as-synthesized ZnS by high-resolution electron microscopy (HREM) and X-ray diffraction (XRD) show a high quality in the single crystal. Optical properties of as-prepared ZnS nanowires were also investigated by measuring Raman and photoluminescence (PL) spectra. In this letter, we show a simple and effective process by which very high quality single crystalline wurtzite ZnS nanowires are grown along [001] direction with strong ultra-violet (UV) emission near 339 nm.
ZnO nanowires are prepared using vapor-liquid-solid process. Two-photon absorption measurement has been carried out using femtosecond laser pulses ranging
Bacterial nanowires have been shown to have significant potential applications in the fields of bioenergy and bioremediation.[17] Electron transfer between the pili of Geobacter, a dissimilatory metal-reducing bacterium, generates conductivity that drives the conversion of organic compounds to electricity in microbial fuel cells.[18] Biofilms produced by Geobacter colonies contribute greatly to the overall production of bioenergy. They allow the transfer of electrons via conductive pili over a greater distance from the anode.[17] In fact, Bioenergy output can be further enhanced by inducing the expression of additional nanowire genes. Geobacter strains with heightened expression of conductive pili have been shown to produce more conductive biofilms, thus increasing overall electricity output.[18] Microbial nanowires of Shewanella and Geobacter have also been shown to aid in bioremediation of uranium contaminated groundwater.[19] To demonstrate this, scientists compared and observed the ...
Silver nanowires have a diameter of a few tens of nanometers and length of a few tens of micrometers, giving them a high (1000:1) aspect ratio. Silver nano
Camellia sinensis is a well-known plant used for health purposes due to its high phenolic compound content and antioxidant properties. For the first time, the infusion of green tea has allowed the growth and stabilization of silver nanowires (AgNWs). Two commercial types of green tea leaf extracts were used for the
(2010) Shalek et al. Proceedings of the National Academy of Sciences. A generalized platform for introducing a diverse range of biomolecules into living cells in high-throughput could transform how complex cellular processes are probed and analyzed. Here, we demonstr...
By combining a new generation of piezoelectric nanogenerators with two types of nanowire sensors, researchers have created what are believed to be the first self-powered nanometer-scale sensing devices that draw power from the conversion of mechanical energy.
In this study, we explore characteristic fluctuation of gate-all-around silicon nanowire MOSFETs induced by random discrete dopants (RDDs) resulting from source/drain extensions. Compared with the results of source extension, asymmetric variations of characteristics induced by RDDs in the drain extension are suppressed owing to the different extent of screening effect on the surface of channel; in particular, the fluctuations of voltage gain and cut-off frequency are reduced from 24% and 21% to 7% and 10%, respectively, because of the effective fluctuation reduction of maximum transconductance near the drain extension.
Optical devices based on Planar Lightwave Circuit (PLC) technology have well been studied due to their inherited advantages from Integrated Circuits (IC), such as: small size, high reliability, mass production and potential integration with microelectronics. Among all the materials, silicon nanowire platform gains more and more interest. The large refractive index difference between core and cladding allows tremendous reduction of the component size. This thesis studies theoretically and experimentally some integrated optical devices based on silicon nanophotonic platform, including echelle grating demultiplexers and photonic crystals.. Some of the numerical methods are introduced first. Scalar integral diffraction method is efficient for calculating the diffraction efficiency of gratings. Beam propagation method and finite-difference time-domain method are also introduced, for simulating the light propagation along the devices.. The fabrication technology and characterization methods are ...
We describe a method of detecting nanometer-level gap and tip/tilt alignment between a focusing zone plate mask and a silicon substrate using interferometric-spatial-phase-imaging (ISPI). The zone plate mask is used to generate submicrometer focused light spot to induce silicon nanowire growth in a CVD process. ISPI makes use of diffracting fringes from gratings and checkerboards fabricated on the mask to determine the correct gapping distance for the focusing zone plates. The method is capable of detecting alignment inside a gas-flow chamber with variable pressure ...
To thoroughly understand the role that estrogen receptors partake in regulation of gene expression, characterization of estrogen receptors (ERs) and estrogen-response elements (EREs) interactions is essential. In the work, we present a highly sensitive and reusable silicon nanowire (SiNW) biosensor to study the interactions between human ER proteins (ER, alpha and beta subtypes) and EREs (dsDNA). The proteins were covalently immobilized on the SiNW surface. Various EREs including wild-type, mutant and scrambled DNA sequences were then applied to the protein-functionalized SiNW surface. Due to negatively charged dsDNA, binding of the EREs to the ERs on the n-type SiNW biosensor leads to the accumulation of negative charges on the surface, thereby inducing increase in resistance. The results show that the specificity of the ERE-ERalpha binding is higher than that of the ERE-ERbeta binding, what is more, the mutant ERE reduces the binding affinity for both ERalpha and ERbeta. By applying
Molybdenum disulfide nanowires and nanoribbons have been synthesized by a two-step, electrochemical/chemical synthetic method. in the first step, MoOx wires (a mixture of MoO2 and MoO3) were electrodeposited size-selectively by electrochemical step-edge decoration on a highly oriented pyrolytic graphite (HOPG) surface. Then, MoOx precursor wires were converted to MoS2 by exposure to H2S either at 500-700C, producing low-temperature or LT MoS2 nanowires that were predominantly 2H phase, or above 800C producing high-temperature or HT MoS2 ribbons that were predominantly 3R phase. the majority of these MoS2 wires and ribbons were more than 50 m in length and were organized into parallel arrays containing hundreds of wires or ribbons. MoS2 nanostructures were characterized by X-ray photoelectron spectroscopy, scanning and transmission electron microscopy, selected area electron diffraction, X-ray diffraction, UV-visible absorption spectrometry, and Raman spectroscopy. HT and LT MoS2 nanowires were
Based on evanescent-wave guiding properties of nanowire waveguides, we propose to use single-mode subwavelength-diameter silica nanowires for optical sensing. Phase shift of the guided mode caused by index change is obtained by solving Maxwells equation, and is used as a criterion for sensitivity estimation. Nanowire sensor employing a wire-assembled Mach-Zehnder structure is modeled. The result shows that optical nanowires, especially those fabricated by taper drawing of optical fibers, are promising for developing miniaturized optical sensors with high sensitivity.. ©2005 Optical Society of America. Full Article , PDF Article ...
TY - JOUR. T1 - Strain-engineered allotrope-like bismuth nanowires for enhanced thermoelectric performance. AU - Kim, Jeongmin. AU - Oh, Min Wook. AU - Kim, Gwansik. AU - Bahk, Je Hyeong. AU - Song, Jae Yong. AU - Jeon, Seong Gi. AU - Chun, Dong Won. AU - Bae, Jee Hwan. AU - Shim, Wooyoung. AU - Lee, Wooyoung. PY - 2018/2/1. Y1 - 2018/2/1. N2 - Allotropy is a fundamental concept that has been frequently studied since the mid-1800s. Although the bulk allotropy of elemental solids is fairly well understood, it remains challenging to reliably produce an allotrope at the nanoscale that has a different crystal structure and accompanies a change in physical properties for specific applications. Here, we demonstrate a "heterostructure" approach to produce allotrope-like bismuth nanowires, where it utilizes the lattice constant difference between bismuth and tellurium in core/shell structure. We find that the resultant strain of [100]-grown Bi nanowires increases the atomic linear density along the ...
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Purchase Semiconducting Silicon Nanowires for Biomedical Applications - 1st Edition. Print Book & E-Book. ISBN 9780857097668, 9780857097712
Background: An efficient, promoted tri-component catalytic reaction between barbituric acid (or N,N-dimethyl barbituric acid), 4-hydroxy coumarin, and a wide range of aryl aldehydes using zinc oxide nanowires (ZnO NWs) to obtain some new 4-hydroxychromenylarylmethyl-6-hydroxypyrimidine-2,4-diones is described. Method: The reactants were successfully condensed via three C-C bond formation by zinc oxide nanowires (ZnO NWs) as an efficient, environmentally safe and recyclable nano catalyst to produce target molecules. In addition, the biological effects of synthesized products by the use of DPPH and acyclovir as positive controls and also Hep-2, vero cell, HSV-1, and adenovirus as four applied cell lines have been evaluated. Results: The results showed that synthesized products have anti-oxidant, cytotoxic and anti-viral activities and can offer promising prospect as biologically active agents. Conclusion: This achievement in an efficient and eco-friendly synthesis of novel analogous of hybrid molecules
This is the first demonstration of high performance thermoelectric capability in silicon, an abundant semiconductor for which there already exists a multibillion dollar infrastructure for low-cost and high-yield processing and packaging," said Arun Majumdar, a mechanical engineer and materials scientist with joint appointments at Berkeley Lab and UC Berkeley, who was one of the principal investigators behind this research.. "Weve shown that its possible to achieve a large enhancement of thermoelectric energy efficiency at room temperature in rough silicon nanowires that have been processed by wafer-scale electrochemical synthesis," said chemist Peidong Yang, the other principal investigator behind this research, who also holds a joint Berkeley Lab and UC Berkeley appointment. Majumdar, who was recently appointed director of Berkeley Labs Environmental Energy Technologies Division (EETD) and is a member of the Materials Sciences Division, is an expert on energy conversion and nanoscale science ...