We have investigated individual bulk-like wires of wurtzite InP using photoluminescence, photoluminescence excitation spectroscopy and transmission electron microscopy. (lu.se)
Learn defect identification by photoluminescence spectroscopy. (avs.org)
They can be configured for many different types of spectroscopy and, as such, are used to measure absorbance, reflectance, and even emission spectra, such as fluorescence and photoluminescence, of micron-sized samples. (techbriefs.com)
Could photoluminescence spectroscopy be an alternative technique for the detection of microplastics? (uni-marburg.de)
The dynamics of excitons in individual semiconducting single-walled carbon nanotubes was studied using time-resolved photoluminescence (PL) spectroscopy. (uni-muenchen.de)
The samples were characterized using X-ray diffraction (XRD), diffuse reflectance spectroscopy (DRS), High resolution scanning electron microscope (HR-SEM), Raman spectroscopy and photoluminescence spectroscopy (PL). The XRD pattern and Raman spectra confirmed the presence of crystalline nature and phase pure anatase tetragonal system. (iaamonline.org)
We apply photoluminescence (PL) microscopy and micro spectroscopy to rationalize the recombination pathways of free charge carriers at the conditions of constantly evolving defect types and concentrations. (lu.se)
Emission6
Photoluminescence is the optical emission obtained by photon excitation (usually a laser) and is commonly observed with III-V semiconductor materials. (horiba.com)
The resulting KDP:CdTe/CdS composites are new types of solid-state conversion materials with emission colors covering green to red spectral regions. (rsc.org)
However, the difference between the direct and indirect band gap is very small ( ～ 140 meV) and photoluminescence emission ability of Ge could be greatly enhanced by heavy n-doping process. (scirp.org)
Increased overlap should lead to increased light emission in photoluminescence or an increased efficiency of FRET coupling with the polymer layers. (semiconductor-today.com)
Various techniques were used to evaluate the influence of the network-former substitution on the structural and optical properties, including photoluminescence (PL) emission, of these materials. (unesp.br)
Sharp emission peaks appeared in the photoluminescence spectra of the single crystals. (cambridge.org)
Spectra3
Absorption and photoluminescence (PL) spectra, PL quantum efficiency, and PL lifetime have been investigated on bis(8-hydroxyquinoline) zinc (Znq2) and magnesium (Mgq2) in solutions and powder. (edu.pl)
The mid-IR spectra identified them as type IIa diamond but did not contain features that confirmed synthetic origin. (gia.edu)
Their photoluminescence (PL) spectra had nearly identical features, suggesting that they originated from similar manufacturing processes. (gia.edu)
When considering the wavelength of absorbed and emitted wavelengths of photons, there are two major types of fluorescence and resonance fluorescence. (differencebetween.com)
Fluorescence is a form of photoluminescence in which a substance emits light with a different wavelength to that of the absorbed wavelength. (differencebetween.com)
Though fluorescence is a form of photoluminescence, photoluminescence may refer to either the fluorescence or resonance fluorescence, which are different from each other depending on the wavelengths of the absorbed and emitted radiation. (differencebetween.com)
Based on this, the difference between photoluminescence and fluorescence is that in photoluminescence, the wavelengths of the absorbed and emitted photons can be the same or different. (differencebetween.com)
However, when the dye is added to the graphene or N-doped graphene substrate, the photoluminescence -- fluorescence -- is quenched. (nanowerk.com)
Time-resolved3
Quenching of photoluminescence in a substituted polythiophene in the presence of a deposited C-60 layer is studied by steady-state and time-resolved photoluminescence (PL). The steady-state PL is evaluated by con -sidering the interference of the absorbed and emitted electro-optical field in the thin film coupled to exciton diffusion in the conjugated polymer. (lu.se)
article{1d27fdc6-bf5f-4aa1-ba14-21f7c67d4b70, abstract = {{Quenching of photoluminescence in a substituted polythiophene in the presence of a deposited C-60 layer is studied by steady-state and time-resolved photoluminescence (PL). The steady-state PL is evaluated by con -sidering the interference of the absorbed and emitted electro-optical field in the thin film coupled to exciton diffusion in the conjugated polymer. (lu.se)
The team used steady-state photoluminescence (PL), photoluminescence excitation (PLE), and time-resolved PL (TR-PL) to study the influence on FRET of SQW width (Figure 2), InN mole fraction, and growth temperature, along with top cap thickness, content, growth temperature, and n-doping. (semiconductor-today.com)
Scientists from Uni Potsdam and HZB developed a photoluminescence technique to observe light hitting this 1cm² perovskite solar cell. (pv-magazine.com)
Upconversion2
We propose that the energy gains required in the polarized upconversion photoluminescence originate from different interactions including resonant optical phonons, a cooling of resident electrons and a non-local and an anisotropic electron-hole exchange, respectively. (nature.com)
Upconversion photoluminescence in poly(ladder-type-pentaphenylene) doped with metal (II)-octaethyl porphyrins. (mpg.de)
Phosphor2
The shape and size of the phosphor particles may depend on the crystal type and particle size of the starting materials as well as the method of preparation. (hindawi.com)
Takahashi, Y , Iwasaki, K & Fujiwara, T 2012, ' Photoluminescence in mineral-derived titanosilicates with various Ti-polyhedral types for rare-earth free phosphor ', Physica Status Solidi (C) Current Topics in Solid State Physics , vol. 9, no. 12, pp. 2336-2339. (elsevierpure.com)
Crystals1
We report the results of photoluminescence measurements on ZnO bulk crystals implanted with both stable and radioactive species involving the group IV impurities Ge, Si and Sn. (dcu.ie)
Operating the measurement equipment is relatively simple for measurements of this type. (avs.org)
In this work, we present insights from photoluminescence mi- croscopy as well as multimodal photoluminescence and X-ray diffraction measurements of the temperature and composition dependence of phase segregation. (lu.se)
Electron3
For W-based vdW structures, electron-electron interactions manifest themselves in a trion photoluminescence (PL) line splitting into an inter-valley triplet and intra-valley singlet whose energies are separated by about 6 meV 6 , 7 , 18 . (nature.com)
As a result of rapid development in semiconductor manufacturing, many types of optoelectronic devices such as laser diodes, LEDs, and high-electron-mobility transistors (HEMTs) are now fabricated by epitaxial-growth methods. (horiba.com)
Simulations suggested that n-type doping of the cap would shift the electron wavefunction more to the center of the QW, improving overlap with the hole wavefunction that was little affected in position. (semiconductor-today.com)
InGaN1
Photoluminescence Dynamics in InGaN/GaN Multiple Quantum Well Light-Emitting Diodes. (routledge.com)
Room temperature4
An investigation of different n-type doped zincblende gallium nitride thin films measured by photoluminescence from 7 K to room temperature is presented. (uni-halle.de)
A strong broad band and tunable visible to near-infrared (NIR) photoluminescence (PL) in the range 1.3-2.4 eV are observed for these Si NWs/NCs at room temperature, depending on the etching conditions. (gla.ac.uk)
The visible photoluminescence and infrared photoluminescence of the prepared nanostructures were measured at room temperature. (ua.pt)
These promising results were demonstrated using room-temperature passivation or photoluminescence lifetime imaging. (edu.au)
InAs2
The optical properties of large InAs/GaAs quantum dots were investigated by low-temperature photoluminescence as a function of the excitation-power density. (scirp.org)
E. C. Le Ru, J. Fack and R. Murray, "Temperature and Excitation Density Dependence of the Photoluminescence from Annealed InAs/GaAs Quantum Dots," Physical Re- view B, Vol. 67, No. 24, 2003, pp. 245318-245329. (scirp.org)
GaAs1
A model involving trapping of electrons from GaAs into "quantum boxes" formed by type-II ordered GaInP 2 domains is proposed. (edpsciences.org)
Quantum efficiency1
However, bulk lead halide hybrids generally have a relatively low photoluminescence quantum efficiency (PLQE). (chemistryviews.org)
Defect2
The boron-oxygen defect is one of the most detrimental defects for solar cells and has been well studied in p-type silicon. (edu.au)
Compensated n-type silicon may not be suitable for high efficiency silicon solar cells unless the boron-oxygen defect is mitigated. (edu.au)
Intensity2
We analyzed the dependence of the integrated-photoluminescence intensity on the excitation-power density and the type of radiative recombination involving the electronic ground state and the excited states inside the quantum dots. (scirp.org)
GaN/AlGaN multiple quantum wells (MQWs) of varying well width grown on planar c-plane GaN and a-plane GaN templates fabricated by lateral epitaxial overgrowth (LEO) have been studied by subpicosecond photoluminescence (PL) downconversion and time-correlated single photon counting as a function of pump intensity. (metu.edu.tr)
Fluorescent2
For example, we are experimenting with the conditions for dyeing different types of plastics with fluorescent colors and their discriminability. (uni-marburg.de)
The team chose three types of fluorescent dye molecules for their experiments. (nanowerk.com)
Keywords1
To hear autocomplete suggestions tab past the search button after typing keywords. (routledge.com)
Identification1
Photoluminescence Spectral Lines Identification in. (cambridge.org)
Lifetime1
Recent studies have shown that defects limiting the lifetime of high-quality n-type silicon were unlikely to be related to metals or oxygen precipitates. (edu.au)
Silicon2
The positive conclusions of these studies in regards to the quality of compensated p-type silicon have led to a regain of interest for this material. (edu.au)
The dislocation related photoluminescence in silicon was investigated. (ncl.ac.uk)
Efficiency1
With this technique, the scientists were able to determine which areas and defects caused the biggest efficiency losses in the planar pin-type perovskite cells they worked with. (pv-magazine.com)
Light2
In photoluminescence, energy is transferred from light incident on the material and absorbed to electrons. (wikipedia.org)
We report on the strongly enhanced photoluminescence (PL) and visible light photocatalysis by arrays of vertically aligned single crystalline Si nanowires (NWs) grown by Ag/Au bilayer assisted etching. (gla.ac.uk)
Results2
Photoluminescence results point out that the Eu3+ ions occupy, at least, two distinct local environments. (ua.pt)
Based on the obtained results, the surface defects induced during the PLA process are the origin of this photoluminescence from NSs. (bilkent.edu.tr)
Peaks1
Boron-related peaks seen in natural and treated type IIb diamonds often are not detected in known IIb HPHT- and CVD-grown synthetics. (gia.edu)
Properties1
The composites exhibit anisotropic photoluminescence properties, and due to the protection of the tight matrix, good thermal and chemical stability. (rsc.org)