Semiconductor structures. Medical search. Frequent questions

The Semiconductor Machinery Manufacturing industry in California is expected to grow an annualized x.x% to $7.4 billion over the five years to 2023, while the national industry will likely grow at a rate of x.x% during the same period. (ibisworld.com)

Surface Chemistry, Structure, and Electronic Properties from Microns to the Atomic Scale of Axially Doped Semiconductor Nanowires. (lu.se)
Using both synchrotron-based photoemission electron microscopy/spectroscopy and scanning tunneling microscopy/spectroscopy, we obtain a complete picture of the surface composition, morphology, and electronic structure of InP nanowires. (lu.se)
article{20d4e6ab-67de-4b74-b92a-3de2d19a5e4c, abstract = {{Using both synchrotron-based photoemission electron microscopy/spectroscopy and scanning tunneling microscopy/spectroscopy, we obtain a complete picture of the surface composition, morphology, and electronic structure of InP nanowires. (lu.se)
Uniquely we can probe even atomic scale defects inside and outside of semiconductor nanowires. (lu.se)
In this project, nanofocused X-rays are used for local excitation of semiconductor nanowires. (lu.se)
Nanowires are considered important structures for next-generation electronics, and in order to assess the potential of these structures we need to understand the processes that control their fabrication. (lu.se)
We use time-resolved photoemission electron microscopy (TR-PEEM) to follow the relaxation of photogenerated hot electrons in III-V semiconductor nanowires. (lu.se)
Mikkelsen, A. Unraveling the Ultrafast Hot Electron Dynamics in Semiconductor Nanowires. (lu.se)
Few universities in the world can measure up to Lund when it comes to research on semiconductor nanowires. (lu.se)
The nanowires that are manufactured in Lund are incredibly small semiconductor structures with many possible areas of application. (lu.se)
Using nanowire solar cells, more energy can be extracted from less material, and researchers at the Nanometre Structure Consortium have come a long way in fabricating nanowires that can be mass-produced cheaply and efficiently. (lu.se)

Epitaxy of semiconductors, including heterostructures. (lu.se)
Using the sub-50nm spatial resolution of the PEEM, we can resolve separate segments of nanowire heterostructures and investigate the correlation between local structure and relaxation dynamics. (lu.se)

The fabrication of ferromagnet semiconductor hybrid structures in high crystal perfection is a prerequisite for spintronic device concepts. (pdi-berlin.de)
Our proven MOCVD, lithography, laser annealing, ion beam and single wafer etch & clean technologies play an integral role in producing LEDs for solid-state lighting and displays, and in the fabrication of advanced semiconductor devices. (veeco.com)
The purpose of the course is for the students to acquire basic knowledge in fabrication and characterisation of semiconductor devices. (lu.se)
Since fabrication of semiconductor devices is extremely sensitive and requires a controlled environment, a strong focus will be on learning how to work inside a cleanroom. (lu.se)
The researchers are aiming at understanding the fundamental processes involved in semiconductor nanowire fabrication, in particular for understanding the factors that determine crystal structure and composition of complex materials. (lu.se)

More specifically, the present invention relates to an interconnection structure, a semiconductor device having the interconnection structure, and a method of manufacturing the semiconductor device. (justia.com)

Here, the semiconductor device pattern includes a source/drain diffusion layer pattern for a transistor, a gate electrode pattern for a transistor, a wiring conductor pattern for a power supply, a device isolation insulator pattern, etc. (justia.com)
In addition, a gate insulator film 104 for a MOS (metal-oxide-semiconductor) field effect transistor is formed to cover a surface of the substrate. (justia.com)
Bilbro, GL & Nemanich, RJ 2000, ' Nongeometric field enhancement in semiconducting cold cathodes and in metal-insulator-semiconductor structures ', Applied Physics Letters , vol. 76, no. 7, pp. 891-893. (elsevierpure.com)
Semiconductor/insulator interfaces (MOS structures) and how these can be formed by oxidation and deposition. (lu.se)

We want to bridge the gap between surface characterization (typically done on ideal model surfaces) and device processing, by investigating semiconductor nanostructures during device operation at the atomic scale. (lu.se)
Anders Mikkelsen studies the interplay between function, structure, and growth of nanostructures, from micrometers down to the atomic scale, from seconds to attosecond and moving towards realistic synthesis and device operation environments. (lu.se)
Our ongoing research focuses on ultrafast dynamics of photoexcited charge carriers in semiconductor nanostructures and their correlation with local structure and composition. (lu.se)

Spectroscopic and electronic structure properties of CdSe nanocrystals: spheres and cubes. (bilpubgroup.com)
For semiconductor nanocrystals, it was originally proposed 3 that these 'off' periods corresponded to a nanocrystal with an extra charge. (nature.com)
Here we report ternary core/shell CdZnSe/ZnSe semiconductor nanocrystals that individually exhibit continuous, non-blinking photoluminescence. (nature.com)
To model the unusual photoluminescence properties of the CdZnSe/ZnSe nanocrystals, we softened the abrupt confinement potential of a typical core/shell nanocrystal, suggesting that the structure is a radially graded alloy of CdZnSe into ZnSe. (nature.com)
Colvin, V. L., Schlamp, M. C. & Alivisatos, A. P. Light-emitting-diodes made from cadmium selenide nanocrystals and a semiconductor polymer. (nature.com)
Quantum dots (QDs) are semiconductor nanocrystals that have found use in bioimaging, cell tracking, and drug delivery. (cdc.gov)

The work is conducted within the Nanometer Structure Consortium (nmC@LU), where extensive research is conducted to develop nanowire-based applications in electronics, solar cells, solid state lighting and other areas. (lu.se)
This thesis describes explorations into the heteroepitaxial growth of III-V semiconductor materials in combination with other III-V materials and also with the commonly used Si material, in both thin layer and nanowire geometries. (lu.se)

Seen Semiconductors has made an a-plane GaN on r-plane sapphire wafer available. (seen-semiconductors.com)
Be it a structured glass, an ultra-thin glass that bends around your finger, or an optical glass wafer that defies physical limits - such solutions are only made possible thanks to our FTPS spirit. (schott.com)
Growth of semiconductor crystals of different materials and wafer formation - the starting point for semiconductor processing. (lu.se)

Developing correlations between the structure of organic semiconductor films and their electrical performance will enhance the deterministic and rational design of new materials, composites, and processes to meet emerging industrial applications. (edu.sa)
The photo- FET structure might lead to advancement in the understanding of photo-physics and electronic processes in organic semiconductors that can direct to efficient devices, modified to the specific requirement without the limitations imposed by conventional semiconductor technology. (gov.pk)
Single photon sources (SPS) based on semiconductor quantum dot (QD) platforms are restricted to low temperature (T) operation due to the presence of strong dephasing processes. (mdpi.com)
Low-dimensional III-V semiconductor nanoscale structures grown by epitaxial processes have emerged as a new class of materials with great promise for various device applications. (lu.se)

A theoretical self-consistent investigation of optically pumped mid-infrared intersubband semiconductor laser with hot electron effects is presented. (illinois.edu)
It is anticipated that lasing in the mid-infrared can be achieved with asymmetric quantum well structures optimized for electron concentrations exceeding 10 11 /cm 2 . (illinois.edu)
It is anticipated that lasing in the mid-infrared can be achieved with asymmetric quantum well structures optimized for electron concentrations exceeding 1011/cm2. (illinois.edu)
The resulting spontaneous field enhancement may explain enhancement factors observed in electron emission from semiconducting cathodes and may similarly contribute to gate leakage in metal-oxide-semiconductor field effect transistors. (elsevierpure.com)
A central goal is to obtain new insights into fundamental concepts such as electron screening, scattering, tunneling, coherence and excitation in low dimensional compound semiconductor and metal (nano) structures. (lu.se)
The layered CdSe/CdS systems with twolayer CdS coverings can be interpreted in terms of combinations of two semiconductors with different energy band gaps (2.6 eV and 3.3 eV), while analogous systems with single-layer CdS coverings do not demonstrate a two-gap electron structure. (bilpubgroup.com)

In order to overcome the challenges associated with the growth of a semiconductor on a metal, we have developed solid-phase epitaxy as an approach where an amorphous film of Ge is deposited on Fe 3 Si and then crystallized slowly by thermal annealing. (pdi-berlin.de)
We offer 20 years of epitaxy growers' experience and the know-how allowing to manufacture structures of the world's highest parameters. (seen-semiconductors.com)
2", 3" and 4" epitaxy structures are now available - please ask for details. (seen-semiconductors.com)

Our focus is on the growth of half-metallic Heusler alloys on GaAs-related structures. (pdi-berlin.de)
In addition, we focus on the preparation of single FeGe 2 films on GaAs and on graphene to study the properties of this new layered ferromagnetic material, which does not exist as a bulk material in this structure. (pdi-berlin.de)
The substitution of a small fraction x of nitrogen atoms, for the group V elements in conventional III-V semiconductors such as GaAs and GaSb strongly perturbs the conduction band of the host semiconductor. (ucc.ie)

The present invention relates to a semiconductor device, and more specifically to a contact hole structure in a semiconductor device. (justia.com)

Above-bandgap photoexcitation of semiconductors results in the generation of 'hot' electrons with considerable excess energy. (lu.se)

Characterisation of semiconductor transistors can be challenging - with new devices their size is shrinking smaller and smaller. (blue-scientific.com)
The AKONIS complements the CAMECA IMS Wf/SC Ultra and the SIMS 4550 quadrupole SIMS, which are also used in semiconductor industry characterisation labs. (blue-scientific.com)

Commission (meets every 2 years, during International Conference in Semiconductor Physics), comprises Chair, Vice-Chair, Secretary, 10 Full members and 2 Associate members. (uia.org)
We theoretically investigate different ways of exploiting superconducting proximity effect in semiconductors for fundamental physics experiments and for quantum technologies. (lu.se)

Highly compact electro-optical modulators have been demonstrated in compound semiconductors. (wikipedia.org)

The possibility to simultaneously determine the thickness and the conductivity of nanometer semiconductor layered structures by use of the microwave photonic crystals has been shown. (sgu.ru)
This indicates that attosecond and femtosecond timescales can be relevant for structures confined to the (sub-) nanometer scale in one or more dimensions. (lu.se)

The basic structure consists of a silver electrode plated with nickel-tin solder. (rohm.com)
Vanguard Group has filed a patent for a semiconductor device that includes a substrate, an epitaxial layer, a doped region, and a gate electrode. (retailbankerinternational.com)
The gate electrode consists of two structures, with the second structure having larger dimensions than the first. (retailbankerinternational.com)
The gate electrode consists of a first structure with a certain dimension and a second structure above it. (retailbankerinternational.com)
The first portion is located on the sides and bottom of the first structure of the gate electrode. (retailbankerinternational.com)
The main portion of the second structure of the gate electrode extends through the well region and into the doped region. (retailbankerinternational.com)
The first structure of the gate electrode is positioned across the doped region and the epitaxial layer. (retailbankerinternational.com)
The second opening is filled with a metal material, which is then etched back to form the first structure of the gate electrode. (retailbankerinternational.com)
A gate dielectric layer is deposited on the top surface of the first structure, and a second structure of the gate electrode is formed on the gate dielectric layer, filling the remaining portion of the second opening and the first opening. (retailbankerinternational.com)

However, with the increase in an integration degree of semiconductor devices, a space between the interconnection lines becomes increasingly narrow. (justia.com)
Self-focusing SIMS is a new technique for measuring the composition of semiconductors and SiGE devices. (blue-scientific.com)
Most semiconductor devices employ one or more P-N junctions. (eeeguide.com)
The P-N junction is the control element for the performance of all semiconductor devices such as rectifiers, amplifiers, switching devices, linear and digital integrated circuits. (eeeguide.com)
Congratulations to Prof. Ahmed Saeed Hassanien for becoming the Editor-in-Chief of Semiconductor Science and Information Devices! (bilpubgroup.com)
Demand for oxide-nitride layer structures has increased due to their enormous potential in enabling next-generation energy-efficient nano-devices and advanced data storage. (veeco.com)
Our team is highly interested in exploring the properties of atomically engineered oxide-nitride layer structures especially because of their extraordinary properties but also for their potential in paving the way to novel energy-efficient nano-devices," said Stuart Parkin, Director of the NISE Department at the MPI-MSP and Alexander von Humboldt Professor, Martin Luther University Halle-Wittenberg, Halle. (veeco.com)

However, in silicon photonics, electro-optical modulation has been demonstrated only in large structures, and is therefore inappropriate for effective on-chip integration. (wikipedia.org)
The large dimensions of previously demonstrated structures were necessary to achieve a significant modulation of the transmission in spite of the small change of refractive index of silicon. (wikipedia.org)
have recently demonstrated a high-speed silicon optical modulator based on a metal-oxide-semiconductor (MOS) configuration. (wikipedia.org)
To further develop semiconductor technology, the field of molecular electronics is seeking to manufacture circuit components from individual molecules instead of silicon. (unibas.ch)
Semiconductor integrated circuits formed on a semiconductor substrate, and particularly, a silicon semiconductor substrate, are continuously increasing in integration density and in integration scale, particularly, for example, the integrated circuit typified by a SRAM (static random access memory) has increased its integration scale from 1 megabits to 4 megabits and more. (justia.com)
FLEXINITY® is a structured glass portfolio that can bond perfectly to silicon, carries structures in micron-grade tolerances, and takes semiconductors and sensors to the next level. (schott.com)

abstract = "We extend the usual one-dimensional equilibrium theory of the surface space charge region that screens a semiconductor from an external electric field in order to admit perturbations in three dimensions and time. (elsevierpure.com)

We also investigate the band structure, scattering and mobility of carriers by finding the poles of the SCGF, which gives lower carrier mobility for GaNxAs1−x, compared to those already calculated, in better agreement with experiments. (ucc.ie)
We also investigate how coupling semiconductors and superconductors can provide additional functionality in other (nontopological) quantum technologies, for example to couple spin qubits over large distances, in gate-controlled superconducting qubits, and in new types of qubits based on Andreev bound states. (lu.se)

We use Near-Edge X-ray Absorption Fine Structure (NEXAFS) spectroscopy as a powerful non-destructive method to evaluate the structure and chemistry of thin organic semiconductor films. (edu.sa)
Average bond orientation relative to the substrate can be quantified, particularly the orientation of conjugated planes of organic semiconductors and conductors. (edu.sa)
We present two examples of structural correlations for different types of organic semiconductors. (edu.sa)
The sensitivity of NEXAFS to π-bonds, its insensitivity to optical quality, and its ability to probe nanoscale films provide an ideal measurement platform for the systematic investigation of organic semiconductors and conductors. (edu.sa)
The correlations that result delineate clear routes to enhance operational field effect mobility in polymer and small molecule organic semiconductors. (edu.sa)
Using methyl-red thin film based metal/organic/metal structures are investigated. (gov.pk)

The method for forming the semiconductor device involves providing a substrate and an epitaxial layer on the substrate. (retailbankerinternational.com)
Having a precise description of water s structure is critical to constructing accurate simulations of molecular events, including protein folding, substrate binding, macromolecular recognition, and complex formation. (phys.org)

The most popular method to study the water structure around any solute used a one-dimensional radial distribution function that averages the number of water O and H atoms at a particular distance to increase the signal to noise ratio, Chopra explains. (phys.org)
Doping: How small amounts of impurity atoms are introduced in a semiconductor crystal through diffusion or implantation. (lu.se)

Similarly the N-type semiconductor block has mobile or free electrons (shown by dots) and the same number of fixed donor positive ions. (eeeguide.com)
On the formation of PN Junction in Semiconductor some of the holes from P-type material tend to diffuse across the boundary into N-type material and some of the free electrons similarly diffuse into the P-type material, as illustrated in Fig. 6.37. (eeeguide.com)

The calculated optical absorption spectra for InyGa1−yNxAs1−x and GaNxSb1−x using the SCGF agree well with the experimental data, confirming the validity of this approach to study the band structure of these materials. (ucc.ie)
This paper deals with several problems related to the theory of amorphous semiconductors, some of which have remained unsolved despite the magnitude of the effort devoted to basic and applied research on these materials. (princeton.edu)
In quantum solid-state band theory, materials in nature are generally classified as insulators, semiconductors, metals, semimetals, and half-metals based on the electronic band structures (density of states or band structure), as shown below. (stackexchange.com)
These materials usually have polar point group structure regarding as a prerequisite of ferroelectricity. (bvsalud.org)
Yet, to introduce polar structure into otherwise nonpolar 2D materials for producing ferroelectricity remains a challenge. (bvsalud.org)
Examples of explored materials are nanostructured semiconductors, solar cell materials and catalysts. (lu.se)

The present disclosure relates to resistive field structures that provide improved electric field profiles when used with a semiconductor device. (sandia.gov)

An improved photoconductive semiconductor switch comprises multiple-line optical triggering of multiple, high-current parallel filaments between the switch electrodes. (sandia.gov)

For the bulk semiconductors, local and nonlocal pseudopotential parameters are obtained by fitting transport-relevant quantities, such as band gap, effective masses and deformation potentials, to available experimental data. (umass.edu)
Using these resistive field structures, the characteristics of the electric field profile can be independently modulated from the physical parameters of the semiconductor device. (sandia.gov)
We analyze the accuracy of the band structure reconstruction depending on the predicted parameters and propose a prelearning method to solve the problem of the low accuracy of some parameters. (gtiit.edu.cn)

Filoche, M. 1991-04-01 00:00:00 Numerical simulation of the static semiconductor device equations using mixed finite element for the approximation and A.D.I. techniques DouglasRachford with local time steps for the solution is presented in this paper. (deepdyve.com)
A semiconductor device includes a first insulating layer, a second insulating layer formed on the first insulating layer, a plurality of interconnection lines formed in the second insulating layer, and a first air gap disposed between the first insulating layer and the second insulating layer to surround a lower part of the interconnection lines. (justia.com)
A semiconductor device includes a variety of interconnection lines for transmitting signals. (justia.com)
Various embodiment of the present invention are directed to an interconnection structure with improved characteristics, a semiconductor device, and a method of manufacturing the same. (justia.com)
In particular, for reduction of memory cell size in an SRAM having a complicated memory cell structure and requiring a fine patterning, it has become important to consider a method for reducing spacing between a contact hole in the memory cell and another semiconductor device pattern. (justia.com)
SRAM device with SiGe structure occupying 11% of the total analysis area. (blue-scientific.com)
A recently filed patent (Publication Number: US20230207682A1) describes a semiconductor device and a method for forming it. (retailbankerinternational.com)
The semiconductor device further includes a gate dielectric layer, which is divided into three portions. (retailbankerinternational.com)
carry out basic semiconductor processing in a clean room environment · analyse a specific device and decide which processing steps that are required to produce it · write a well-structured technical report about semiconductor processing. (lu.se)

A comparison between Mn:ZnO and Co:ZnO highlights the fundamental difference in their electronic structures which explains why their FM is dependent on carriers of different polarity. (aps.org)

Here, we present an analysis to the electronic structures of several typical wide gap DMS's and illustrate how first principles calculations can lead to correct predictions of their magnetic properties for both Cr:TiO$_2$ and Mn:GaN. (aps.org)
Here, by combining first-principles calculations and experimental studies , it is reported that the native Ga vacancy-defects located in the asymmetrical sites in cubic defective semiconductor α-Ga2 Se3 can induce polar structure. (bvsalud.org)
Employing core-level X-ray spectroscopies, scanning tunneling microscopy, and DFT calculations, they analyzed the structure and electronic properties of honeycomb boron after its reaction with aluminum. (lu.se)

Simulation of a CdSe/CdS quantum dot shows that the single-layer CdS shell demonstrates a tendency for the formation of the electronic structure with two energy gaps: approximately of 2.5 eV and 3.0 eV. (bilpubgroup.com)

In solid HHG, the characteristics of the generated coherent radiation are dominated by the band structure of the material, which configures one of the key properties of semiconductors and dielectrics. (gtiit.edu.cn)

Direct access to electronic and geometric structure of solid surfaces to the Ångström length scale is available uniquely by Scanning Tunneling Microscopy. (lu.se)

Figure 6.36 represents two blocks of semiconductor material, one P-type, and the other N-type. (eeeguide.com)
Can these Band-gap specifications be attributed to a Half-Semiconductor material? (stackexchange.com)
We usually go all the way down to the crystal and atomic structure to understand the properties of the material. (lu.se)

Quantum confinement, uniaxial and biaxial strain and crystal orientation effects of the band structure are investigated. (umass.edu)

Electronic band structure of various crystal orientations of relaxed and strained bulk, 1D and 2D confined semiconductors are investigated using nonlocal empirical pseudopotential method with spin-orbit interaction. (umass.edu)

Geology is the study of the Earth and how it works: its minerals, rocks, their structure and interactions above and below Earth's surface. (abdn.ac.uk)

Equally spaced, uniformly boron doped, vertical SiGe FIN structure with evenly spaced SiGe and Si 3 N 4 . (blue-scientific.com)
The doping profile of an ideal uniformly doped PN Junction in Semiconductor is depicted in Fig. 6.38. (eeeguide.com)

The films prepared with this method crystallize in the well-oriented, layered tetragonal structure FeGe 2 . (pdi-berlin.de)
Here, we combine an all-optical method and deep learning to reconstruct the band structure of semiconductors. (gtiit.edu.cn)
The final challenge was to find a method to visualize water structure around buckyball. (phys.org)

We study primarily semiconductors for light-emitting diodes, solar cells, low-energy electronics, and computation. (lu.se)
The invisible semiconductor wires play a crucial role in future production of LEDs, batteries and solar cells. (lu.se)

The recent exciting reports that wide gap semiconductors, most notably ZnO, TiO$_2$ and GaN, when doped with transition metal elements, may have Tc's that are higher than room temperature have attracted great interest. (aps.org)
A structure with C2mb symmetry, calculated to be a poor metal, is proposed for the oC88 phase (60-65 GPa). (ed.ac.uk)
What is the difference between a half metal (HM) and a spin gapless semiconductor (SGS)? (stackexchange.com)
I would like to know what is the difference between a Half metal (HM) and a Spin Gapless Semiconductor (SGS) in terms of definition and DOS/Bandstructure appearance . (stackexchange.com)
Compared to the band structure of half metal, one spin channel of SGS is touching slightly (gapless). (stackexchange.com)

They found that although it resembles graphene in electronic structure to some extent, it fails to form a quasi-freestanding monolayer on aluminum. (lu.se)

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