• In this paper, the results of atomic layer deposition (ALD) of lithium-nickel-silicon oxide thin films using lithium hexamethyldisilazide (LiHMDS) and bis(cyclopentadienyl) nickel (II) (NiCp 2 ) as precursors and remote oxygen plasma as a counter-reagent are reported. (mdpi.com)
  • Atomic layer deposition (ALD) provides a promising route for depositing uniform thin-film electrodes for Li-ion batteries. (mdpi.com)
  • Silicon surface passivation is studied using Al2O3 thin film deposited by thermal process using atomic layer deposition (ALD) method. (csircentral.net)
  • To enable the growth of these Si-based dielectric films, semiconductor manufacturers are transitioning from chemical vapor deposition to atomic layer deposition (ALD). (ucc.ie)
  • Atomic layer deposition (ALD) provides very thin conformal coatings even deep down into complex or porous structures and thus might be a suitable technique for this purpose. (alpin-germany.de)
  • Chromophore-Catalyst Assembly for Water Oxidation Prepared by Atomic Layer Deposition. (acs.org)
  • Here, we report on the fabrication and characterization of high aspect ratio iridium gratings with a period of 1 μm and a depth of 30 μm combining deep reactive ion etching of silicon and atomic layer deposition of iridium. (lu.se)
  • Nanolamination of GaN and ZnO layers by atomic layer deposition (ALD) is employed to fabricate GaN-ZnO homogenous solid-solution thin films because it offers more precise control of the stoichiometry. (bvsalud.org)
  • The effectiveness of three different designs of conduit plates was verified for even distribution of precursors in a voluminous forced-flow atomic layer deposition (ALD) chamber designed to hold macroscopic elongated substrates vertically. (bvsalud.org)
  • Highly homogeneous Al- and Zn-doped TiO2 nanotubes were fabricated by atomic layer deposition (ALD) via nanolaminated stacks of binary layers of TiO2/Al2O3 and TiO2/ZnO, respectively. (bvsalud.org)
  • One important technique in manufacturing of electronic devices is chemical vapor deposition (CVD), by which thin layers can be deposited. (dissertations.se)
  • The Plasma-Therm Versaline high density plasma chemical vapor deposition (HDPCVD) system uses an inductively coupled plasma to remotely ionize deposition molecules at high power away from the substrate. (nist.gov)
  • This technology provides a low temperature alternative to furnace driven processes and conventional plasma enhanced chemical vapor deposition methods for the deposition of silicon dioxide, silicon nitride, and amorphous silicon. (nist.gov)
  • A variation in the reactive ion etch (RIE) rate of silicon oxynitride (SiO x N y ) films deposited by plasma-enhanced chemical vapor deposition was studied by CHF 3 RIE, CHF 3 + carbon mono-oxide (CO) RIE and CF 4 RIE. (elsevierpure.com)
  • Ueno, K , Kikkawa, T & Tokashiki, K 1995, ' Reactive ion etching of silicon oxynitride formed by plasma-enhanced chemical vapor deposition ', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures , vol. 13, no. 4, pp. 1447-1450. (elsevierpure.com)
  • abstract = "A variation in the reactive ion etch (RIE) rate of silicon oxynitride (SiOxNy) films deposited by plasma-enhanced chemical vapor deposition was studied by CHF3 RIE, CHF3 + carbon mono-oxide (CO) RIE and CF4 RIE. (elsevierpure.com)
  • We report generation lifetimes of over 1 μs in Si 0.82 Ge 0.18 epitaxial strained layers grown by rapid thermal chemical vapor deposition on silicon substrates. (princeton.edu)
  • Schwartz, PV & Sturm, JC 1990, ' Microsecond carrier lifetimes in strained silicon-germanium alloys grown by rapid thermal chemical vapor deposition ', Applied Physics Letters , vol. 57, no. 19, pp. 2004-2006. (princeton.edu)
  • In order to investigate these phenomena, we study the reaction mechanism of plasma-enhanced chemical vapor deposition (PECVD) silicon oxide film and its change by fluorine addition. (elsevierpure.com)
  • The Korean researchers use a method called chemical vapor deposition. (technologyreview.com)
  • Columbia University physics professor Philip Kim , who is a coauthor of the new paper, says that chemical vapor deposition is one of the cheapest ways to make quality graphene on a large scale and should be compatible with existing semiconductor fabrication technologies. (technologyreview.com)
  • Plasma enhanced chemical vapor deposition (PECVD) is widely used in the microelectronics and solar cell industries to deposit thin films from a mixture of gas-phase species onto a solid substrate [1]. (confex.com)
  • As a graduate student in the materials science program at the University of Alabama at Birmingham, my Ph.D. research was focused primarily on structure and mechanical properties of nanocrystalline diamond films made via chemical vapor deposition, although I also contributed to "designer diamond anvil" technology for high pressure physics research. (uab.edu)
  • Chemical Vapor Deposition (CVD) of diamond and other hard forms of carbon continues to be a very active area of research, particularly in the field of tribology where coatings of high hardness and low friction are required. (uab.edu)
  • This control system was utilized with the SALD/SALDVI techniques for depositing silicon nitride. (utexas.edu)
  • Silicon nitride. (nist.gov)
  • Silicon nitride is a chemical compound of the elements silicon and nitrogen. (wikipedia.org)
  • Si 3N 4 (Trisilicon tetranitride) is the most thermodynamically stable and commercially important of the silicon nitrides, and the term ″Silicon nitride″ commonly refers to this specific composition. (wikipedia.org)
  • Silicon nitride is prepared by heating powdered silicon between 1300 °C and 1400 °C in a nitrogen atmosphere: 3 Si + 2 N 2 → Si 3N 4 The silicon sample weight increases progressively due to the chemical combination of silicon and nitrogen. (wikipedia.org)
  • citation needed] In addition to Si 3N 4, several other silicon nitride phases (with chemical formulas corresponding to varying degrees of nitridation/Si oxidation state) have been reported in the literature. (wikipedia.org)
  • However, use of low-purity raw silicon caused contamination of silicon nitride by silicates and iron. (wikipedia.org)
  • The carbothermal reduction was the earliest used method for silicon nitride production and is now considered as the most-cost-effective industrial route to high-purity silicon nitride powder. (wikipedia.org)
  • Since the lattice constants of silicon nitride and silicon are different, tension or stress can occur, depending on the deposition process. (wikipedia.org)
  • Silicon nitride nanowires can also be produced by sol-gel method using carbothermal reduction followed by nitridation of silica gel, which contains ultrafine carbon particles. (wikipedia.org)
  • Silicon nitride is difficult to produce as a bulk material-it cannot be heated over 1850 °C, which is well below its melting point, due to dissociation to silicon and nitrogen. (wikipedia.org)
  • Bonding of silicon nitride powders can be achieved at lower temperatures through adding materials called sintering aids or "binders", which commonly induce a degree of liquid phase sintering. (wikipedia.org)
  • Dense silicon nitride compacts have been obtained by this techniques at temperatures 1500-1700 °C. Blue atoms are nitrogen and grey are silicon atoms trigonal α-Si 3N 4. (wikipedia.org)
  • hexagonal β-Si 3N 4 cubic γ-Si 3N 4 There exist three crystallographic structures of silicon nitride (Si 3N 4), designated as α, β and γ phases. (wikipedia.org)
  • At lower pressures, the deposited films consist of a fine mixture of three amorphous phases (amorphous stoichiometric silicon nitride, amorphous non-stoichiometric silicon nitride and amorphous silicon). (unisalento.it)
  • We conclude that silicon nitride is mostly synthesized during the impact on the collector of the flow of the ablated substance. (unisalento.it)
  • Especially when using PECVD technology this tension can be reduced by adjusting deposition parameters. (wikipedia.org)
  • Using a two film-forming species model, we explain the dependence of the deposition rate and the step coverage on the residence time for a SiH 4 /N 2 O-based PECVD system. (elsevierpure.com)
  • The deposition rate of silicon oxide films is decreased and the step coverage is improved by CF 4 addition during SiH 4 /N 2 O-based PECVD. (elsevierpure.com)
  • Using a two film-forming species model, we explain the dependence of the deposition rate and the step coverage on the residence time for a SiH4/N2O-based PECVD system. (elsevierpure.com)
  • 2008. Symposium on Amorphous and Polycrystalline Thin-Film Silicon Science and Technology held at the 2008 MRS Spring Meeting, San Francisco, CA, March 25-28, 2008. (epfl.ch)
  • The amorphous silicon is prevalent in films deposited at a pressure of several to several tens of mu bars. (unisalento.it)
  • 250 ͦ C) while achieving optimal dielectric properties of amorphous silicon thin films. (confex.com)
  • 2] Rech B, Wagner H. Potential of amorphous silicon for solar cells. (confex.com)
  • Vacancies and voids in hydrogenated amorphous silicon. (confex.com)
  • Complex chemical reactions take place in the gas and on the substrate surface, leading to many intermediate species and by-products, and eventually to the desired deposition. (dissertations.se)
  • However, the competing effects of chemical kinetics and gas transport are known to result in non-uniform densification as the outer surfaces of the preform experience faster depositions compared to the core. (ornl.gov)
  • Specifically, a chemical kinetics model has been formulated for Silicon Carbide (SiC) deposition from MTS/H2 precursor. (ornl.gov)
  • Polysilicon deposition is the process of depositing a layer of polycrystalline silicon on a semiconductor wafer, is achieved by pyrolyzing SiH 4 ) at 580 to 650 °C.When the rate at which polysilicon deposition occurs is slower than the rate at which unreacted silane arrives, then it is said to be surface-reaction-limited. (greenworldinvestor.com)
  • Polysilicon layers can be deposited using 100% silane at a pressure of 25-130 Pa (0.2 to 1.0 Torr) or with 20-30% silane (diluted in nitrogen) at the same total pressure.At reduced pressure levels for VLSI manufacturing, polysilicon deposition rate below 575 °C is too slow to be practical. (greenworldinvestor.com)
  • Silicon dioxide. (nist.gov)
  • The low dielectric constant of F-doped silicon dioxide film makes it suitable for use as an intermetal film to improve the performance of ultra-large scale integrated circuits (ULSIs). (elsevierpure.com)
  • Silicosis, the oldest known occupational pulmonary disease, is caused by inhalation of tiny particles of silicon dioxide in the form of unbound (free) crystalline silica (usually quartz) or, less commonly, by inhalation of silicates, minerals containing silicon dioxide bound to other elements, such as talc. (msdmanuals.com)
  • Silicon carbide (SiC) and III-nitrides are wide bandgap materials that have gained increased interest in recent years. (dissertations.se)
  • 1996. The toxicity of silicon carbide whiskers, a review. (cdc.gov)
  • We have prepared nanocrystalline silicon ultrafine particles by very-high-frequency plasma decomposition of silane and hydrogen. (journaldephysique.org)
  • Examples include (bisdiethylamino)silane as silicon precursor and plasma of N2 as reactant. (wikipedia.org)
  • In this work, a CFD model for simulating industrial scale particle-fluid systems is used to model a fluidized bed reactor for the deposition of high-purity silicon from silane gas. (cpfd-software.com)
  • Using the reactor design and experimental data from work performed at the Jet Propulsion Laboratory as a basis for validation, the CFD model was found to accurately model the deposition rate, silicon fines production, and temperature distribution within a silane deposition reactor. (cpfd-software.com)
  • The source gas flow rate ratio (R = N 2 O/SiH 4 ) during the SiO x N y film deposition was varied to obtain a film of different atomic composition. (elsevierpure.com)
  • The source gas flow rate ratio (R = N2O/SiH4) during the SiOxNy film deposition was varied to obtain a film of different atomic composition. (elsevierpure.com)
  • It is known that fluorine addition to silicon oxide decreases the film deposition rate and improves the step coverage. (elsevierpure.com)
  • describe fabrication processes that are based on surface patterning, thin film deposition, etching and doping · explain how such processes can be implemented on the nanometer scale · explain connections between choice of material/fabrication process and the function and performance of a device. (lu.se)
  • Silicon Surface Cleaning by Low Dose Argon-Ion Bombardment for Low-Temperature (750C) Epitaxial Deposition. (bell-labs.com)
  • Temperature control is especially important in SALD/SALDVI because temperature plays a defining role in both composition and deposition rate. (utexas.edu)
  • These three high temperature steps have been reduced to two by simultaneous pre-deposition and diffusion of boron and phosphorus using the spin-on sources. (elsevierpure.com)
  • Simulations across a wide range of deposition conditions reveal that the reactor temperature and the ratio of SiH 4 to H 2 in the feed are critical parameters which play a key role in determining the quality of the film microstructure and the concentration of trapped hydrogen species. (confex.com)
  • A relatively new technique, single particle triple quadrupole inductively coupled plasma-mass spectrometry was used to analyze aluminum-, silicon- and titanium-containing particle deliveries in cigarette and little cigar mainstream tobacco smoke, and to collect information on solid inorganic particles. (cdc.gov)
  • The simulation of synoptic conditions and dry deposition of four dust particles including clay, small silt, large silt, and sand was performed with Eta model, coupled with a desert dust cycle module. (hindawi.com)
  • Dry deposition is the transfer of airborne dust particles to the surface through different mechanical processes, mainly Brownian diffusion, interception, inertial impaction, and sedimentation [ 10 , 11 ]. (hindawi.com)
  • Dry deposition also occurs via interception when particles of small inertia, which perfectly follow the streamlines of the mean flow field, pass in the vicinity of an obstacle and are held back because the distance between the particle centre and the surface is smaller than its radius [ 12 ]. (hindawi.com)
  • Generally, the dry deposition velocity decreases with an increasing of particle size for particle smaller than 0.1 μ m and increases with particle size for particles larger than 2 μ m [ 17 , 18 ]. (hindawi.com)
  • Concerning the large silt and sand particles gravitational settling becomes much more important and deposition velocity increases with an increasing of particle diameter. (hindawi.com)
  • Selective Surface Deposition of Colloidal Particles. (mpg.de)
  • 1997. Deposition Modeling of Fibrous Particles in Rats: Comparisons with Available Experimental Data. (cdc.gov)
  • 1996. Deposition of ellipsoidal particles in turbulent duct flows. (cdc.gov)
  • 1994. Inertial and Gravitational Deposition of Particles in a Square Cross Section Bifurcating Airway. (cdc.gov)
  • 1993. Deposition of glass fiber particles from turbulent air flow in a pipe. (cdc.gov)
  • Limitations of the particle background equivalent diameter (the smallest detectable particle size (MassHunter 4.5 Software) due to the environmentally ubiquitous silicon background restricted the determination of silica nanoparticles, but silica particles slightly below 200 nm diameter were consistently detected. (cdc.gov)
  • This study reports on the effects of hydrogen dilution and deposition time on six silicon thin films deposited at six specific deposition regimes. (uwc.ac.za)
  • Additionally, both silicon and hydrogen radicals interact on the surface and within the lattice bulk, yielding a more accurate growth mechanism than in previous studies. (confex.com)
  • After completion of the deposition process, post batch measurements allow for the hydrogen content and void fraction to be characterized. (confex.com)
  • The min-function in spallation targets (for a given amount of energy deposition), is the smaller of 1 and the product of the duty cycle c and the the available time-integrated flux reaches a maximum of only required wavelength resolution in terms of (l/dl) fractions of the above-mentioned reactor sources in state-of-the- required. (lu.se)
  • a) The Czochralski process is the most commonly used process of producing polysilicon and is also known as the Siemens process.In this process High-purity silicon is melted in a quartz crucibles.Then a pure silicon rod known as a seed crystal is dipped in molten silicon.The process begins when the chamber is heated to approximately 1500 degrees Celsius, melting the silicon. (greenworldinvestor.com)
  • By using a pulsed metal-oxide-semiconductor capacitor technique, we were able to probe the minority-carrier properties of a layer of Si 0.82 Ge 0.18 sandwiched between two epitaxial layers of silicon. (princeton.edu)
  • It specializes in the market segments of deposition and etch, which entail the buildup of layers on a semiconductor and the subsequent selective removal of patterns from each layer. (yahoo.com)
  • Semiconductor grade (also solar grade) polycrystalline silicon is converted to "single crystal" silicon - meaning that the randomly associated crystallites of silicon in "polycrystalline silicon" are converted to a large "single" crystal. (greenworldinvestor.com)
  • Semiconductor/insulator interfaces (MOS structures) and how these can be formed by oxidation and deposition. (lu.se)
  • Double Sided Buried Contact (DSBC) silicon solar cells have recently been developed at the University of New South Wales. (elsevierpure.com)
  • Ebong, AU , Honsberg, CB & Wenham, SR 1996, ' Fabrication of double sided buried contact (DSBC) silicon solar cell by simultaneous pre-deposition and diffusion of boron and phosphorus ', Solar Energy Materials and Solar Cells , vol. 44, no. 3, pp. 271-278. (elsevierpure.com)
  • 2nd International Workshop on Thin Film Silicon Solar Cells IWTFSSC-2, Berlin, Germany, April 21-23, 2009. (epfl.ch)
  • Most of the processes are general and are used in silicon-based IC-technology, solar cells, III-V devices (e.g. (lu.se)
  • The importance of controlling these impurities in the etching and deposition processes has increased as the feature sizes have decreased and become more complex. (ncu.edu.tw)
  • This particular case was chosen based on the strong dry removal that occurred, rendering it ideal for examining the deposition processes. (hindawi.com)
  • The performance of these reactors is directly dependent on a large number of factors and parameters which make the design and optimization of the deposition reactors an engineering challenge. (cpfd-software.com)
  • The main aim of this thesis is to form high-quality nanocrystalline silicon thin films with the help of sputtering and ion beam deposition. (odu.edu)
  • We report the deposition of Si-N films by multipulse excimer laser (lambda = 308 nm, (tau)FWHM = 30 ns) ablation of Si wafers placed in a slow flow of NH3 in the pressure range (1 mu bar-1 mbar). (unisalento.it)
  • The piezoelectric activity of the as-deposited AlScN films appears to improve after a 15-minute post-deposition annealing at 600ºC, leading to a 20% increase in the electromechanical coupling factor. (upm.es)
  • 5 bar) and the quality of deposited films, in an effort to develop deposition techniques that are capable of producing high-quality materials at reasonable growth rates. (confex.com)
  • Carbon fiber fabrics (size 300mm× 80mm) and SiC fiber fabrics (size 400mm× 80mm) were coated using ALD with a multilayer system: a first layer made of 320 cycles of alumina (Al2O3) deposition, a second layer made of 142 cycles of titania-furfuryl alcohol hybrid (TiO2-FFA), and a third layer made of 360 cycles of titanium phosphate (TixPOy). (alpin-germany.de)
  • These properties generally depend on the growth conditions in the reaction chamber, and on the chemistry of the deposition process. (dissertations.se)
  • In the present work, the dry deposition mechanisms of mineral dust are analysed during an event on the 3 March 2004 over the Northwest African coast. (hindawi.com)
  • The presence of some metals such as Al, Fe, Co, and Mn, in dust may significantly modify the marine biochemistry and may change the phytoplankton communities resulting in fast growth rates leading to blooms [ 8 ], after deposition to Ocean waters [ 9 ]. (hindawi.com)
  • A project to reduce float dust deposition in return and belt airways of underground coal longwall mines through laboratory and field evaluation of novel dust prevention, capture, and suppression methods and dissemination of related findings. (cdc.gov)
  • Deposition of dust produces dust-laden macrophages around bronchioles (coal macules), occasionally causing focal bronchiolar. (msdmanuals.com)
  • The concentration of each species for deposition is changed by the residence time of the gas, thus the deposition rate and the step coverage show dependence on the residence time. (elsevierpure.com)
  • Crystalline Silicon production process and HORIBA's products supporting this process. (horiba.com)
  • 1998. Alveolar Deposition of Fibers in Rodents and Humans. (cdc.gov)
  • 1995. Deposition of Refractory Ceramic Fibers (RCF) in the Human Respiratory Tract and Comparison with Rodent Studies. (cdc.gov)
  • 1994. Deposition modeling of refractory ceramic fibers in the rat lung. (cdc.gov)
  • Performance tradeoff between lateral and interdigitated doping patterns for high speed carrier depletion based silicon modulators. (nature.com)
  • Optimization and demonstration of a large-bandwidth carrier-depletion silicon optical modulator. (nature.com)
  • Ultra-low power carrier-depletion Mach-Zehnder silicon optical modulator. (nature.com)
  • 1998. Effect of Fiber Geometry on Deposition in Small Airways of the Lung. (cdc.gov)
  • Lam holds the top market share in etch and holds the clear cut second share in deposition. (yahoo.com)
  • The most commonly observed forms of aluminum, silicon and titanium in tobacco products are aluminum silicates (e.g., kaolin), silica and titanium(IV) oxide. (cdc.gov)
  • Previous results concerning radiative emission under laser irradiation of silicon nanopowder are reinterpreted in terms of thermal emission. (udg.edu)
  • The deposition rate reached a maximum value of 0.2-0.3 nm per pulse. (unisalento.it)
  • The dry deposition velocities are calculated as a function of particle size, density, friction velocity, and surface characteristics and they include the contributions of turbulent transfer, Brownian diffusion, impaction, interception, gravitational settling, and particle rebound [ 15 , 16 ]. (hindawi.com)
  • Minority carrier lifetime measurements showed that the film passivate the silicon surface effectively. (csircentral.net)
  • High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization. (nature.com)
  • Graphene transistors could also replace silicon thin-film transistors, which are not transparent and are hard to fabricate on plastic. (technologyreview.com)
  • The number and range of particle sizes determined in mainstream smoke is consistent with pulmonary deposition of aluminum silicates described by other researchers as contributing to the 'smokers' inclusions' observed in pulmonary macrophages. (cdc.gov)
  • Deposition by impaction increases with particle size and by decreasing of wind speed, and it is also strongly influenced by surface structure [ 24 , 25 ]. (hindawi.com)
  • When the silicon is fully melted, a small seed crystal mounted on the end of a rotating shaft is slowly lowered until it just dips below the surface of the molten silicon. (greenworldinvestor.com)
  • The major features of the biogeochemical cycle of barium include wet and dry deposition to land and surface water, leaching from geological formations to groundwater, adsorption to soil and sediment particulates, and biomagnification in terrestrial and aquatic food chains. (cdc.gov)
  • Conclusions: For both microhybrid and nanohybrid CRs, the silicon rubber tips were effective to reduce the surface roughness after bleaching procedure. (bvsalud.org)
  • Surface smoothness of the restorations is one of the main factors of aesthetic success, since rough surfaces contribute to staining and bacteria deposition, and decreased brightness 13 . (bvsalud.org)
  • The increasing demands for smaller electronic devices with improved performance at lower costs drive the conventional silicon technology to its limits. (dissertations.se)
  • This work sheds light into the microstructure, material properties and mechanical behavior of individual nanosprings fabricated by seeded Glancing Angle Deposition (GLAD), with the purpose of designing highly compliant interfaces with drastically reduced coupling between normal and shear deformation. (materialstoday.com)
  • They can be regarded as consisting of layers of silicon and nitrogen atoms in the sequence ABAB. (wikipedia.org)
  • Low power 50 Gb/s silicon traveling wave Mach-Zehnder modulator near 1300 nm. (nature.com)
  • In: Proceedings 1st European Silicon Days 2001, Munich, 6. (mpg.de)
  • Conditions such as pH, Eh (oxidation-reduction potential), cation exchange capacity, and the presence of sulfate, carbonate, and metal oxides (e.g., oxides of aluminum, manganese, silicon, and titanium) will affect the partitioning of barium and its compounds in the environment. (cdc.gov)